Backside incidence type solid-state image pickup device

Patent metadata

Field	Value
Publication number	US-10811459-B2
Application number	US-201515505993-A
Country	US
Kind code	B2
Filing date	Aug 4, 2015
Priority date	Sep 9, 2014
Publication date	Oct 20, 2020
Grant date	Oct 20, 2020

Abstract

A back-illuminated solid-state imaging device includes a semiconductor substrate, a shift register, and a light-shielding film. The semiconductor substrate includes a light incident surface on the back side and a light receiving portion generating a charge in accordance with light incidence. The shift register is disposed on the side of a light-detective surface opposite to the light incident surface of the semiconductor substrate. The light-shielding film is disposed on the side of the light-detective surface of the semiconductor substrate. The light-shielding film includes an uneven surface opposing the light-detective surface.

First claim

The invention claimed is:

1. A back-illuminated solid-state imaging device, comprising:
a semiconductor substrate including a light incident surface on a back side and a light receiving portion generating a charge in accordance with light incidence;
a charge transfer unit disposed on a side of a light-detective surface opposite to the light incident surface of the semiconductor substrate; and
a light-shielding film disposed on the side of the light-detective surface of the semiconductor substrate,
wherein the light-shielding film includes an uneven surface opposing the light-detective surface,
the back-illuminated solid-state imaging device further comprising:
an insulating film between the semiconductor substrate and the light-shielding film, the light-shielding film being disposed on the insulating film,
wherein the insulating film includes asperities, and
the uneven surface of the light-shielding film is formed to conform to the asperities of the insulating film,
a plurality of conductors disposed in the insulating film and along the light-detective surface,
wherein the asperities of the insulating film are formed in a manner corresponding to the plurality of conductors, and
wherein the uneven surface reflects light incident on the light incident surface and transmitted through the semiconductor substrate,
the light receiving portion includes a plurality of pixels,
the light-shielding film includes a plurality of regions disposed on the light receiving portion, each of the plurality of regions being disposed on a corresponding pixel of the plurality of pixels,
the plurality of conductors are disposed on the light receiving portion, and
the plurality of regions of the light-shielding film disposed on the light receiving portion includes the uneven surface of the light-shielding film, and
at each of the regions of the light-shielding film, the uneven surface includes a plurality of projected surfaces a plurality of depressed surfaces positioned to be alternately repeated and continuous.

2. The back-illuminated solid-state imaging device according to claim 1 ,
wherein the light-shielding film is made of a conductive r petal material, and
among the plurality of conductors, the light-shielding film is electrically connected to a conductor other than a conductor to which a predetermined signal is fed.

3. The back-illuminated solid-state imaging device according to claim 1 ,
wherein the plurality of conductors includes a plurality of first conductors and a plurality of second conductors, the first conductors and the second conductors being disposed alternately with their ends overlapping each other, and
the asperities of the insulating film are formed in a manner corresponding to differences in level formed by the first conductors and second conductors.

4. The back-illuminated solid-state imaging device according to claim 1 ,
wherein the insulating film includes a separated portion at least per the plurality of pixels, and
the light-shielding film is disposed between the separated portions of the insulating film.

5. The back-illuminated solid-state imaging device according to claim 1 ,
wherein the light receiving portion includes a plurality of photosensitive areas disposed in a first direction as the plurality of pixels,
a plurality of electric potential gradient forming units are disposed on the side of the light-detective surface of the semiconductor substrate, the plurality of electric potential gradient forming units forming an electric potential gradient increasing along a second direction perpendicular to the first direction for the corresponding photosensitive area,
the charge transfer unit transfers the charge from the plurality of photosensitive areas in the first direction, and
the light-shielding film is disposed to cover the plurality of electric potential gradient forming units and the charge transfer unit.

6. The back-illuminated solid-state imaging device according to claim 5 ,
wherein each of the photosensitive areas has a rectangular shape having long edges in the second direction in a plan view, and
the projected surfaces and the depressed surfaces of the uneven surface of the light-shielding film are repetitively continued in the second direction.

7. The back-illuminated solid-state imaging device according to claim 1 , wherein
the light receiving portion includes a plurality of photosensitive areas disposed in a first direction as the plurality of pixels,
a plurality of electric potential gradient forming units are disposed on the side of the light-detective surface of the semiconductor substrate, the plurality of electric potential gradient forming units forming an electric potential gradient increasing along a second direction perpendicular to the first direction for the corresponding photosensitive area,
the charge transfer unit transfers the charge from the plurality of photosensitive areas in the first direction,
the light-shielding film is disposed to cover the plurality of electric potential gradient forming units, and
the plurality of conductors is located on the plurality of electric potential gradient forming units.

8. The hack-illuminated solid-state imaging device according to claim 7 , wherein
the light-shielding film is made of a conductive metal material, and
the plurality of conductors is electrically connected to the light-shielding film.

9. The back-illuminated solid-state imaging device according to claim 1 , wherein
the light-detective surface includes no uneven surface.

Assignees

• Hamamatsu Photonics Kk

Inventors

• Takagi Shin-Ichiro
• Maeta Kentaro
• Yoneta Yasuhito
• Suzuki Hisanori
• Muramatsu Masaharu

Classifications

• H04N23/632

  for displaying or modifying preview images prior to image capturing, e.g. variety of image resolutions or capturing parameters · CPC title

• H04N25/71

  Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors · CPC title

• H10F39/153

  Two-dimensional or three-dimensional array CCD image sensors · CPC title

• H10F39/152

  One-dimensional array CCD image sensors · CPC title

• H10F39/1515 Primary

  Optical shielding · CPC title