Ferroelectric element and method of manufacturing ferroelectric element

Patent metadata

Field	Value
Publication number	US-10801113-B2
Application number	US-201715487563-A
Country	US
Kind code	B2
Filing date	Apr 14, 2017
Priority date	Apr 19, 2016
Publication date	Oct 13, 2020
Grant date	Oct 13, 2020

Abstract

A method of manufacturing a ferroelectric element includes forming an insulating film on one side of a metal substrate by an electron beam (EB) vapor deposition method or a sputtering method; forming a metal film on the insulating film by the sputtering method; and forming a ferroelectric film on the metal film by a sol-gel method. The metal substrate includes iron (Fe) and nickel (Ni), and a content of the nickel (Ni) is greater than or equal to 30% and less than or equal to 40%.

First claim

What is claimed is:

1. A ferroelectric element comprising:
a metal substrate;
an insulating film formed on the metal substrate;
a metal film formed on the insulating film;
a seed film formed on the metal film;
a ferroelectric film formed on the seed film, and
an amorphous lead zirconate zirconium titanate film provided around the ferroelectric film, said ferroelectric film being formed by (i) applying precursor solution of lead zirconate zirconium titanate on the seed film and (ii) locally radiating laser at a particular portion of the metal substrate, thereby locally heating a portion of the amorphous lead zirconate zirconium titanate film to be crystallized and leaving an unheated portion of the amorphous lead zirconate zirconium titanate film amorphous,
wherein the metal substrate includes iron (Fe) and nickel (Ni), and a content of the nickel (Ni) is greater than or equal to 30% and less than or equal to 40%, and
wherein each of the metal substrate, the insulating film, metal film and the ferroelectric film has a plate-shape so as to extend in a direction parallel with the substrate.

2. The ferroelectric element according to claim 1 , wherein a thermal expansion rate of the metal substrate at room temperature is less than or equal to 5×10 −6 /K.

3. The ferroelectric element according to claim 1 , wherein the metal substrate is a substrate including one or more metals of cobalt (Co), platinum (Pt), and palladium (Pd).

4. The ferroelectric element according to claim 1 , wherein a surface roughness Rz of the metal substrate on a side having the ferroelectric film is less than or equal to 0.5 μm.

5. The ferroelectric element according to claim 1 , wherein a thickness of the metal substrate is less than or equal to 100 μm.

6. The ferroelectric element according to claim 1 , wherein the metal film is
a metal film including one or more metals of platinum (Pt), palladium (Pd), iridium (Ir), titanium (Ti), and rhodium (Rh),
a metal alloy film including an alloy of one or more of the metals, or
a layered film formed by selecting any of the metal films or the metal alloy films and depositing a plurality of the selected films.

7. The ferroelectric element according to claim 1 , wherein the metal film has a film thickness of greater than or equal to 100 nm and less than or equal to 500 nm.

8. The ferroelectric element according to claim 1 , further comprising an upper electrode directly formed on the ferroelectric film.

9. The ferroelectric element according to claim 1 , wherein the insulating film is formed directly on the metal substrate.

10. The ferroelectric element according to claim 1 , wherein the metal film is formed directly on the insulating film.

11. The ferroelectric element according to claim 1 , wherein the seed film is formed of SrRuO 3 .

12. The ferroelectric element according to claim 1 , wherein the ferroelectric element further comprises a second insulating film formed between the insulating film and the metal film.

13. The ferroelectric element according to claim 1 , wherein the amorphous lead zirconate zirconium titanate film is formed by a synthesized PZT precursor solution having a composite oxide solid component concentration that is approximately less than or equal to 0.5 mole/liter.

14. The ferroelectric element according to claim 1 , wherein the ferroelectric film is formed by repeating the steps (i) and (ii), thereby sequentially laminating the ferroelectric films having a film thickness of approximately 30 nm through 80 nm to form the ferroelectric film 14 having a desired film thickness.

Assignees

• Chen Xianfeng
• Meixner Melanie
• Vedder Christian
• Schneller Theodor
• Boettger Ulrich
• Ricoh Co Ltd

Inventors

• Chen Xianfeng
• Meixner Melanie
• Vedder Christian
• Schneller Theodor
• Boettger Ulrich

Classifications

• C23C14/081 Primary

  of aluminium, magnesium or beryllium · CPC title

• H10D1/694

  comprising noble metals or noble metal oxides · CPC title

• H10D1/682

  having dielectrics comprising perovskite structures · CPC title

• H01G4/1245

  containing also titanates · CPC title

• H01G7/06

  having a dielectric selected for the variation of its permittivity with applied voltage, i.e. ferroelectric capacitors (electrets H01G7/02) · CPC title