Pattern formation method, manufacturing method of peizoelectric film and manufacturing method of piezoelectric element

Patent metadata

Field	Value
Publication number	US-9583694-B2
Application number	US-201414479639-A
Country	US
Kind code	B2
Filing date	Sep 8, 2014
Priority date	Sep 12, 2013
Publication date	Feb 28, 2017
Grant date	Feb 28, 2017

Abstract

A pattern formation method includes forming an electromagnetic wave blocking structure having a region on a one side of a support substrate, a reflectance of an electromagnetic wave in the region being lower than a reflectance in an area outside the region; forming a mask layer provided with an opening corresponding to the region and configured to be thermally decomposed at a predetermined temperature on an other side of the support substrate; forming a first heated layer in the opening; and shedding an electromagnetic wave from the one side of the support substrate on the electromagnetic wave blocking structure, wherein an intensity of the electromagnetic wave is determined such that a temperature of the mask layer is less than the predetermined temperature and a temperature of the first heated layer being heated is greater than or equal to the predetermined temperature.

First claim

What is claimed is:

1. A pattern formation method comprising:
forming an electromagnetic wave blocking structure having a region on a one side of a support substrate, a reflectance of an electromagnetic wave in the region being lower than a reflectance in an area outside the region;
forming a mask layer provided with an opening corresponding to the region and configured to be thermally decomposed at a predetermined temperature on an other side of the support substrate;
forming a first heated layer in the opening; and
shedding an electromagnetic wave from the one side of the support substrate on the electromagnetic wave blocking structure, wherein an intensity of the electromagnetic wave is determined such that a temperature of the mask layer is less than the predetermined temperature and a temperature of the first heated layer being heated is greater than or equal to the predetermined temperature.

2. The pattern formation method as claimed in claim 1 further comprising forming an electromagnetic wave absorption layer on the other side of the support substrate and on a lower layer side of the mask layer, forming a heat distribution in the electromagnetic wave absorption layer by the electromagnetic wave shed from the one side of the support substrate on the electromagnetic wave blocking structure, and transferring the heat distribution to the first heated layer.

3. The pattern formation method as claimed in claim 2 wherein the first heated layer is formed such that the first heated layer is in direct contact with the electromagnetic wave absorption layer.

4. The pattern formation method as claimed in claim 1 wherein the electromagnetic wave blocking structure is an electromagnetic wave blocking layer provided with an opening in the region.

5. The pattern formation method as claimed in claim 1 wherein the electromagnetic wave blocking structure has a concave portion in the region formed on the one side of the support substrate.

6. The pattern formation method as claimed in claim 1 wherein the electromagnetic wave blocking structure is an optical film formed on the one side of the support substrate in the region or in the area outside the region, a refraction index of the optical film being different from a refraction index of the support substrate.

7. The pattern formation method as claimed in claim 1 further comprising:
laminating a second heated layer on the first heated layer which has been heated after shedding the electromagnetic wave; and
shedding an electromagnetic wave from the one side of the support substrate on the electromagnetic wave blocking structure, wherein an intensity of the electromagnetic wave is determined such that the temperature of the mask layer is less than the predetermined temperature and a temperature of the second heated layer being heated is greater than or equal to the predetermined temperature.

8. The pattern formation method as claimed in claim 1 wherein forming the mask layer includes forming the mask layer which is not provided with an opening and is configured to be thermally decomposed at the predetermined temperature on the other side of the support substrate; shedding an electromagnetic wave from the one side of the support substrate on the electromagnetic wave blocking structure; and forming the opening by setting the intensity of the electromagnetic wave shed from the one side of the support substrate on the electromagnetic wave blocking structure such that a temperature of a part of the mask layer being heated is greater than the predetermined temperature.

9. The pattern formation method as claimed in claim 1 wherein forming the mask layer includes forming a conductive oxide film patterned so as to correspond to the region in the electromagnetic wave blocking structure on the other side of the support substrate; and forming the mask layer in a region on the other side of the support substrate where the conductive oxide film is not formed, and a part where the conductive oxide film is formed corresponds to the opening.

10. A manufacturing method of a piezoelectric film comprising:
forming an electromagnetic wave blocking structure having a region on a one side of a support substrate, a reflectance of an electromagnetic wave in the region being lower than a reflectance in an area outside the region;
forming a lower electrode which is an electromagnetic wave absorption layer on an other side of the support substrate;
forming a mask layer provided with an opening corresponding to the region and configured to be thermally decomposed at a predetermined temperature on the lower electrode;
forming a complex oxide film, which is a piezoelectric film, in the opening on the lower electrode;
changing a crystalline characteristic of the complex oxide film by shedding an electromagnetic wave from the one side of the support substrate on the electromagnetic wave blocking structure such that a temperature of the mask layer is less than the predetermined temperature and a temperature of the complex oxide film is greater than or equal to the predetermined temperature to form a heat distribution in the lower electrode, and transferring the heat distribution to the complex oxide film; and
increasing a film thickness of the complex oxide film by repeating forming the complex oxide film and changing the crystalline characteristic of the complex oxide film.

11. The manufacturing method of a piezoelectric film as claimed in claim 10 wherein the electromagnetic wave blocking structure is an electromagnetic wave blocking layer provided with an opening in the region.

12. The manufacturing method of a piezoelectric film as claimed in claim 10 wherein the electromagnetic wave blocking structure has a concave portion in the region formed on the one side of the support substrate.

13. The manufacturing method of a piezoelectric film as claimed in claim 10 wherein the complex oxide film contains lead.

14. The manufacturing method of a piezoelectric film as claimed in claim 10 wherein the complex oxide film is a non-lead complex oxide film.

15. The manufacturing method of a piezoelectric film as claimed in claim 10 wherein changing the crystalline characteristic of the complex oxide film includes changing a non-crystalline complex oxide film to an ABO 3 -type perovskite-type crystalline film.

16. A manufacturing method of a piezoelectric element comprising:
the manufacturing method of the piezoelectric film as claimed in claim 10 ; and
forming an upper electrode on the complex oxide film.

Assignees

• Chen Xianfeng
• Ricoh Co Ltd

Inventors

• Chen Xianfeng

Classifications

• B41J2/1631

  photolithography · CPC title

• B41J2/1645

  thin film formation by spincoating · CPC title

• B41J2/1634

  laser machining · CPC title

• B41J2/1642

  thin film formation by CVD [chemical vapor deposition] · CPC title

• B41J2/1646

  thin film formation by sputtering · CPC title