Complex oxide, thin-film capacitive element, liquid droplet discharge head, and method of producing complex oxide

Patent metadata

Field	Value
Publication number	US-9583270-B2
Application number	US-201414183707-A
Country	US
Kind code	B2
Filing date	Feb 19, 2014
Priority date	Mar 13, 2013
Publication date	Feb 28, 2017
Grant date	Feb 28, 2017

Abstract

A complex oxide includes a chemical compound represented by ABO 3 (Chemical Formula 1). In the Chemical Formula 1, A is one or more elements selected from Ba, Ca, and Sr; and B is one or more elements selected from Ti, Zr, Hf, and Sn. When a field having a size of 1 μm×1 μm on a surface of the complex oxide is observed with an atomic force microscope (AFM), a typical particle size is greater than or equal to 300 nm and less than 660 nm. Here, the typical particle size is a maximum length of a maximum particle observed in the field.

First claim

What is claimed is:

1. A complex oxide comprising:
a chemical compound represented by ABO 3 (Chemical Formula 1), and
a chemical compound represented by BaB 2 O 4 (Chemical Formula 2),
wherein in the Chemical Formula 1, A is one or more elements selected from Ba, Ca, and Sr; and B is one or more elements selected from Ti, Zr, Hf, and Sn, and in the Chemical Formula 2, B is one or more elements selected from Ti, Zr, Hf, and Sn,
wherein the chemical compound represented by the Chemical Formula 2 is included in the chemical compound represented by the Chemical Formula 1, so that a ratio of an amount of the chemical compound represented by the Chemical Formula 2 with respect to that of the chemical compound represented by the Chemical Formula 1 is greater than or equal to 0.5 mol % and less than or equal to 3 mol %, and
wherein, when a field having a size of 1 μm×1 μm on a surface of the complex oxide is observed with an atomic force microscope (AFM), a typical particle size is greater than or equal to 300 nm and less than 660 nm, wherein the typical particle size is a maximum length of a maximum particle observed in the field.

2. The complex oxide according to claim 1 ,
wherein the A of the chemical compound represented by the Chemical Formula 1 includes Ba.

3. A thin-film capacitive element comprising:
a first electrode film;
a complex oxide thin-film formed on the first electrode film; and
a second electrode film formed on the complex oxide thin-film,
wherein the complex oxide thin-film is formed of a complex oxide,
wherein the complex oxide includes a chemical compound represented by ABO 3 (Chemical Formula 1), and
a chemical compound represented by BaB 2 O 4 (Chemical Formula 2),
wherein in the Chemical Formula 1, A is one or more elements selected from Ba, Ca, and Sr; and B is one or more elements selected from Ti, Zr, Hf, and Sn, and in the Chemical Formula 2, B is one or more elements selected from Ti, Zr, Hf, and Sn,
wherein the chemical compound represented by the Chemical Formula 2 is included in the chemical compound represented by the Chemical Formula 1, so that a ratio of an amount of the chemical compound represented by the Chemical Formula 2 with respect to that of the chemical compound represented by the Chemical Formula 1 is greater than or equal to 0.5 mol % and less than or equal to 3 mol %, and
wherein, when a field having a size of 1 μm×1 μm on a surface of the complex oxide is observed with an atomic force microscope (AFM), a typical particle size is greater than or equal to 300 nm and less than 660 nm, wherein the typical particle size is a maximum length of a maximum particle observed in the field.

4. The thin-film capacitive element according to claim 3 ,
wherein the thin-film capacitive element is a variable capacitive element.

5. The thin-film capacitive element according to claim 3 ,
wherein the thin-film capacitive element is an electromechanical transducer element.

6. A liquid droplet discharge head comprising:
an electromechanical transducer element,
wherein the electromechanical transducer element includes
a first electrode film;
a complex oxide thin-film formed on the first electrode film; and
a second electrode film formed on the complex oxide thin-film,
wherein the complex oxide thin-film is formed of a complex oxide,
wherein the complex oxide includes
a chemical compound represented by ABO 3 (Chemical Formula 1), and
a chemical compound represented by BaB 2 O 4 (Chemical Formula 2),
wherein in the Chemical Formula 1, A is one or more elements selected from Ba, Ca, and Sr; and B is one or more elements selected from Ti, Zr, Hf, and Sn, and in the Chemical Formula 2, B is one or more elements selected from Ti, Zr, Hf, and Sn,
wherein the chemical compound represented by the Chemical Formula 2 is included in the chemical compound represented by the Chemical Formula 1, so that a ratio of an amount of the chemical compound represented by the Chemical Formula 2 with respect to that of the chemical compound represented by the Chemical Formula 1 is greater than or equal to 0.5 mol % and less than or equal to 3 mol %, and
wherein, when a field having a size of 1 μm×1 μm on a surface of the complex oxide is observed with an atomic force microscope (AFM), a typical particle size is greater than or equal to 300 nm and less than 660 nm, wherein the typical particle size is a maximum length of a maximum particle observed in the field.

Assignees

• Akiyama Yoshikazu
• Chen Xianfeng
• Ricoh Co Ltd

Inventors

• Akiyama Yoshikazu
• Chen Xianfeng

Classifications

• H01L41/0805

  Electricity · mapped topic

• H01G7/06 Primary

  having a dielectric selected for the variation of its permittivity with applied voltage, i.e. ferroelectric capacitors (electrets H01G7/02) · CPC title

• H01L41/317

  Electricity · mapped topic

• H01L41/0973

  Electricity · mapped topic

• H01L41/1871

  Electricity · mapped topic