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US-2017349462-A1 · Dec 7, 2017 · US
Substrate-free 2D tellurene
US10800657B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10800657-B2 |
| Application number | US-201815995576-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 1, 2018 |
| Priority date | Jun 19, 2017 |
| Publication date | Oct 13, 2020 |
| Grant date | Oct 13, 2020 |
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Abstract
Official abstract text for this publication.
The present disclosure generally relates to compositions comprising substrate-free 2D tellurene crystals, and the method of making and using the substrate-free 2D tellurene crystals. The 2D tellurene crystals of the present disclosure are characterized by an X-ray diffraction pattern (CuKα radiation, λ=1.54056 A) comprising a peak at 23.79 (2θ±0.1°) and optionally one or more peaks selected from the group consisting of 41.26, 47.79, 50.41, and 64.43 (2θ±0.1°).
First claim
Opening claim text (preview).
The invention claimed is: 1. A composition comprising substrate-free 2D tellurene crystals, wherein the 2D tellurene crystals are characterized by an X-ray diffraction pattern (CuKα radiation, λ=1.54056 A), wherein the X-ray diffraction pattern consists of five peaks from a range of 23.79 (29±0.1°) to 64.43 (29±0.1°) within an intensity range of 7.8% to 100%, and wherein the five peaks are ranked in an order of intensity from high to low by 23.79 (29±0.1°), 47.79 (29±0.1°), 41.26 (29±0.1°), 64.43 (29±0.1°), and 50.41 (29±0.1°). 2. The composition of claim 1 , wherein the 2D tellurene crystals have a lateral length from 0.1-500 μm. 3. The composition of claim 2 , wherein the 2D tellurene crystals have a lateral length from 0.1-100 μm. 4. The composition of claim 1 , wherein the 2D tellurene crystals have a thickness from 0.5-250 nm. 5. The composition of claim 4 , wherein the 2D tellurene crystals have a thickness from 0.5-100 nm. 6. The composition of claim 1 , wherein the 2D tellurene crystals comprises 2D tellurene single crystals. 7. The composition of claim 1 , wherein the 2D tellurene crystals comprises mono layer 2D tellurene crystals. 8. The composition of claim 1 , wherein the 2D tellurene crystals comprises two or more layers of 2D tellurene crystals.
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- What does patent US10800657B2 cover?
- The present disclosure generally relates to compositions comprising substrate-free 2D tellurene crystals, and the method of making and using the substrate-free 2D tellurene crystals. The 2D tellurene crystals of the present disclosure are characterized by an X-ray diffraction pattern (CuKα radiation, λ=1.54056 A) comprising a peak at 23.79 (2θ±0.1°) and optionally one or more peaks selected fro…
- Who is the assignee on this patent?
- Purdue Research Foundation
- What technology area does this patent fall under?
- Primary CPC classification C01B19/02. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Oct 13 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).