Image sensor having an interconnection layer connecting to stacked transparent electrodes and covering a black pixel region

Patent metadata

Field	Value
Publication number	US-10797092-B2
Application number	US-201916428940-A
Country	US
Kind code	B2
Filing date	May 31, 2019
Priority date	Dec 30, 2016
Publication date	Oct 6, 2020
Grant date	Oct 6, 2020

Abstract

An image sensor of reduced chip size includes a semiconductor substrate having an active pixel region in which a plurality of active pixels are disposed and a power delivery region in which a pad is disposed. A plurality of first transparent electrode layers is disposed over the semiconductor substrate, respectively corresponding to the plurality of active pixels. A second transparent electrode layer is integrally formed across the active pixels. An organic photoelectric layer is disposed between the plurality of first transparent electrode layers and the second transparent electrode layer. An interconnection layer is located at a level that is the same as or higher than an upper surface of the pad with respect to an upper main surface of the semiconductor substrate. The interconnection layer extends from the pad to the second transparent electrode layer, and includes a connector electrically connecting the pad and the second transparent electrode layer.

First claim

What is claimed is:

1. An image sensor comprising:
a semiconductor substrate comprising an active pixel region in which a plurality of active pixels are disposed, a power delivery region in which a pad is disposed on the semiconductor substrate, and a black pixel region that surrounds the active pixel region and in which a plurality of black pixels are disposed, the black pixel region is between the active pixel region and the power delivery region;
a first photolayer disposed over the semiconductor substrate and comprising a plurality of first lower transparent electrode layers respectively corresponding to the plurality of active pixels, a first upper transparent electrode layer integrally formed across the plurality of active pixels, and a first organic photoelectric layer disposed between the plurality of first lower transparent electrode layers and the first upper transparent electrode layer;
a second photolayer disposed over the first photolayer and comprising a plurality of second lower transparent electrode layers respectively corresponding to the plurality of active pixels, a second upper transparent electrode layer integrally formed across the plurality of active pixels, and a second organic photoelectric layer disposed between the plurality of second lower transparent electrode layers and the second upper transparent electrode layer;
a third photolayer disposed over the second photolayer and comprising a plurality of third lower transparent electrode layers respectively corresponding to the plurality of active pixels, a third upper transparent electrode layer integrally formed across the plurality of active pixels, and a third organic photoelectric layer disposed between the plurality of third lower transparent electrode layers and the third upper transparent electrode layer; and
an interconnection layer located at a level that is the same as or higher than an upper surface of the pad with respect to an upper main surface of the semiconductor substrate, the interconnection layer extending from the pad, and comprising a cover covering the black pixel region and a connector electrically connecting the pad and the first upper transparent electrode layer, the second upper transparent electrode layer and the third upper transparent electrode layer.

2. The image sensor of claim 1 , wherein the pad is located at a level lower than the plurality of first lower transparent electrode layers.

3. The image sensor of claim 1 , wherein a sequence of the plurality of second lower transparent electrode layers, the second upper transparent electrode layer and the second organic photoelectric layer of the second photolayer is inverted with respect to a sequence of the plurality of first lower transparent electrode layers, the first upper transparent electrode layer and the first organic photoelectric layer of the first photolayer.

4. The image sensor of claim 3 , wherein the first upper transparent electrode layer and the second upper transparent electrode layer are a shared transparent electrode layer.

5. The image sensor of claim 1 , wherein the first organic photoelectric layer, the second organic photoelectric layer and the third organic photoelectric layer are respectively responsive to light of a first wavelength, light of a second wavelength and light of a third wavelength.

6. The image sensor of claim 1 , wherein the first upper transparent electrode layer comprises an first extender extending into the power delivery region toward the pad, the first upper transparent electrode layer is integrally formed across a part of the power delivery region, the black pixel region, and the active pixel region.

7. The image sensor of claim 1 , wherein the second upper transparent electrode layer comprises an second extender extending into the power delivery region toward the pad, the second upper transparent electrode layer is integrally formed across a part of the power delivery region, the black pixel region, and the active pixel region.

8. The image sensor of claim 1 , wherein the third upper transparent electrode layer comprises an extender extending into the power delivery region toward the pad, the third upper transparent electrode layer is integrally formed across a part of the power delivery region, the black pixel region, and the active pixel region.

9. The image sensor of claim 8 , wherein the cover extends from the third extender to the black pixel region.

10. The image sensor of claim 1 , wherein the cover has a ring shape extending to surround the active pixel region and covering the plurality of black pixels.

11. The image sensor of claim 1 , wherein the upper surface of the pad is located above the upper main surface of the semiconductor substrate, and
wherein the interconnection layer is located above the upper main surface of the semiconductor substrate.

12. The image sensor of claim 1 , wherein the power delivery region is disposed to surround the active pixel region.

13. An image sensor comprising:
a semiconductor substrate comprising an active pixel region in which a plurality of active pixels are disposed, a black pixel region in which a plurality of black pixels are disposed and that surrounds the active pixel region, and a power delivery region in which a plurality of pads including a DC pad are disposed and that surrounds the black pixel region;
a first photolayer disposed over the semiconductor substrate and comprising a plurality of first lower transparent electrode layers respectively corresponding to the plurality of active pixels, a first upper transparent electrode layer integrally formed across the plurality of active pixels, and a first organic photoelectric layer disposed between the plurality of first lower transparent electrode layers and the first upper transparent electrode layer;
a second photolayer disposed over the first photolayer and comprising a plurality of second lower transparent electrode layers respectively corresponding to the plurality of active pixels, a second upper transparent electrode layer integrally formed across the plurality of active pixels, and a second organic photoelectric layer disposed between the plurality of second lower transparent electrode layers and the second upper transparent electrode layer;
a third photolayer disposed over the second photolayer and comprising a plurality of third lower transparent electrode layers respectively corresponding to the plurality of active pixels, a third upper transparent electrode layer integrally formed across the plurality of active pixels, and a third organic photoelectric layer disposed between the plurality of third lower transparent electrode layers and the third upper transparent electrode layer; and
an interconnection layer located at a level higher than an upper main surface of the semiconductor substrate, and extending from the DC pad to the second upper transparent electrode layer,
the interconnection layer comprising a connector electrically connecting the DC pad and the first upper transparent electrode layer, the second upper transparent electrode layer and the third upper transparent electrode layer, and a cover covering the black pixel region.

14. The image sensor of claim 13 , wherein upper surfaces of the plurality of pads are lower than lower surfaces of the plurality of first lower transparent electrode layers with respect to the upper main surface of the semiconductor substrate.

15. The image sensor of claim 14 , wherein the semiconductor substrate comprises a recessed space in the upper main surface of the semiconductor substrate,
wherein the plurality of pads are disposed in the recessed space and the uppe

Assignees

• Samsung Electronics Co Ltd

Inventors

• Lee Gwi-Deok Ryan
• Lee Kwang-Min
• Lee Beom-Suk
• Lee Tae-Yon

Classifications

• H10F39/199

  Back-illuminated image sensors · CPC title

• H10F39/8063

  Microlenses · CPC title

• H10F39/809

  of hybrid image sensors · CPC title

• H10F39/811 Primary

  Interconnections · CPC title

• H10F39/8057

  Optical shielding · CPC title