Solid-state image pickup device, method of manufacturing the same, and electronic apparatus

Patent metadata

Field	Value
Publication number	US-9293722-B2
Application number	US-201314395401-A
Country	US
Kind code	B2
Filing date	Apr 17, 2013
Priority date	May 1, 2012
Publication date	Mar 22, 2016
Grant date	Mar 22, 2016

Abstract

A solid-state image pickup device includes: an organic photoelectric conversion layer; a passivation layer formed to cover a top of the organic photoelectric conversion layer; and an insulating film formed on the passivation layer and in a slit produced on a level difference in the passivation layer, the insulating film having a smaller refractive index than that of the passivation layer.

First claim

What is claimed is:

1. A solid-state image pickup device comprising:
an organic photoelectric conversion layer;
a passivation layer formed to cover a top of the organic photoelectric conversion layer; and
an insulating film formed on the passivation layer and in a slit produced on a level difference in the passivation layer, the insulating film having a smaller refractive index than that of the passivation layer.

2. The solid-state image pickup device according to claim 1 , wherein an organic photoelectric conversion section configured by including the organic photoelectric conversion layer and a photoelectric conversion section formed in a semiconductor base are vertically laminated.

3. The solid-state image pickup device according to claim 1 , wherein the insulating film is a film formed by an atomic layer deposition method (ALD method).

4. The solid-state image pickup device according to claim 1 , wherein an upper electrode connected to the organic photoelectric conversion layer is formed to extend outward from the organic photoelectric conversion layer, and a contact opening section and a wiring layer are further included, the contact opening section being formed in the passivation layer and the insulating film on a portion formed to extend of the upper electrode, the wiring layer being formed inclusive of the inside of the contact opening section and being connected to the upper electrode.

5. A method of manufacturing a solid-state image pickup device including an organic photoelectric conversion layer, the method comprising steps of:
forming the organic photoelectric conversion layer;
forming a passivation layer to cover a top of the organic photoelectric conversion layer; and
forming an insulating film on the passivation layer and in a slit produced on a level difference in the passivation layer, the insulating film having a smaller refractive index than that of the passivation layer.

6. The method of manufacturing the solid-state image pickup device according to claim 5 , wherein the insulating film is formed with use of an atomic layer deposition method (ALD method).

7. An electronic apparatus comprising:
an optical system;
a solid-state image pickup device including an organic photoelectric conversion layer, a passivation layer, and an insulating film, the passivation layer being formed to cover a top of the organic photoelectric conversion layer, and the insulating film being formed on the passivation layer and in a slit produced on a level difference in the passivation layer and having a smaller refractive index than that of the passivation layer; and
a signal processing circuit configured to process an output signal of the solid-state image pickup device.

Assignees

• Sony Corp

Inventors

• Miyanami Yuki

Classifications

• H10F39/802

  Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes · CPC title

• H10F39/80

  Constructional details of image sensors · CPC title

• H10F39/12 Primary

  Image sensors · CPC title

• H01L51/448 Primary

  Electricity · mapped topic

• H01L27/307

  Electricity · mapped topic