Solid-state imaging device and imaging system

US9252169B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9252169-B2
Application numberUS-201113807084-A
CountryUS
Kind codeB2
Filing dateJun 22, 2011
Priority dateJun 30, 2010
Publication dateFeb 2, 2016
Grant dateFeb 2, 2016

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A solid-state imaging device includes: a first semiconductor substrate including a photoelectric conversion element; and a second semiconductor substrate including at least a part of a peripheral circuit arranged in a main face of the second semiconductor substrate, the peripheral circuit generating a signal based on the charge of the photoelectric conversion element, a main face of the first semiconductor substrate and the main face of the second semiconductor substrate being opposed to each other with sandwiching a wiring structure therebetween; a pad to be connected to an external terminal; and a protection circuit electrically connected to the pad and to the peripheral circuit, wherein the protection circuit is arranged in the main face of the second semiconductor substrate.

First claim

Opening claim text (preview).

The invention claimed is: 1. A solid-state imaging device comprising: a first semiconductor substrate having a pixel part and a peripheral circuit part, the pixel part including a photoelectric conversion element and a first transistor for transferring a charge of the photoelectric conversion element, and the peripheral circuit part including a circuit element of a first circuit; a second semiconductor substrate having a second transistor of a second circuit; a wiring structur…

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What does patent US9252169B2 cover?
A solid-state imaging device includes: a first semiconductor substrate including a photoelectric conversion element; and a second semiconductor substrate including at least a part of a peripheral circuit arranged in a main face of the second semiconductor substrate, the peripheral circuit generating a signal based on the charge of the photoelectric conversion element, a main face of the first s…
Who is the assignee on this patent?
Kobayashi Masahiro, Shimotsusa Mineo, Canon Kk
What technology area does this patent fall under?
Primary CPC classification H04N25/79. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Feb 02 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).