Compositions for removing photoresist

Patent metadata

Field	Value
Publication number	US-10795263-B2
Application number	US-201815986901-A
Country	US
Kind code	B2
Filing date	May 23, 2018
Priority date	Apr 27, 2015
Publication date	Oct 6, 2020
Grant date	Oct 6, 2020

Abstract

A composition for removing photoresist, including an alkyl ammonium fluoride salt in an amount ranging from about 0.5 weight percent to about 10 weight percent, based on a total weight of the composition; an organic sulfonic acid in an amount ranging from about 1 weight percent to about 20 weight percent, based on the total weight of the composition; and a lactone-based solvent in an amount ranging from about 70 weight percent to about 98.5 weight percent, based on the total weight of the composition.

First claim

What is claimed is:

1. A composition for removing photoresist, the composition comprising:
an alkyl ammonium fluoride salt in an amount ranging from about 0.5 weight percent to about 10 weight percent, based on a total weight of the composition;
an organic sulfonic acid in an amount ranging from about 1 weight percent to about 20 weight percent, based on the total weight of the composition; and
a lactone-based solvent in an amount ranging from about 70 weight percent to about 98.5 weight percent, based on the total weight of the composition,
wherein:
the alkyl ammonium fluoride salt is represented by the following Chemical Formula:
FN((CH 2 ) n CH 3 ) 4   [Chemical Formula]

in the Chemical Formula, n is an integer between 2 and 10,
the organic sulfonic acid includes one or more of methane sulfonic acid, ethane sulfonic acid, I-propane sulfonic acid, para-toluene sulfonic acid, or benzene sulfonic acid, and
the composition is devoid of water.

2. The composition as claimed in claim 1 , wherein:
the alkyl ammonium fluoride salt is in an amount ranging from about 1 weight percent to about 6 weight percent, based on the total weight of the composition;
the organic sulfonic acid is in an amount ranging from about 1 weight percent to about 10 weight percent, based on the total weight of the composition; and
the lactone-based solvent is in an amount ranging from about 80 weight percent to about 98 weight percent, based on the total weight of the composition.

3. The composition as claimed in claim 1 , wherein the alkyl ammonium fluoride salt consists essentially of tetra-butyl ammonium fluoride.

4. The composition as claimed in claim 1 , wherein the organic sulfonic acid consists essentially of methane sulfonic acid.

5. The composition as claimed in claim 1 , wherein the lactone-based solvent includes one or more of gamma-butyrolactone, gamma-valerolactone, gamma-caprolactone, or gamma-heptalactone.

6. The composition as claimed in claim 5 , wherein the lactone-based solvent includes gamma-butyrolactone.

7. The composition as claimed in claim 1 , wherein the composition for removing photoresist is also devoid of other acidic components except for the organic sulfonic acid.

Assignees

• Samsung Electronics Co Ltd
• Dongwoo Fine Chem

Inventors

• Oh Jung-Min
• Park Mi-Hyun
• Lee Hyo-San
• Jeong Ji-Hoon
• Ko Yong-Sun
• Kim In-Gi
• Kim Na-Rim
• Kim Sang-Tae
• Kim Seong-Min
• Lee Kyong-Ho

Classifications

• H10P50/287

  by chemical means · CPC title

• H10P30/22

  using masks · CPC title

• H10D84/0172

  Manufacturing their gate conductors · CPC title

• H10D84/038

  using silicon technology, e.g. SiGe · CPC title

• H10D84/017

  Manufacturing their source or drain regions, e.g. silicided source or drain regions · CPC title