System and method for learning and/or optimizing manufacturing processes
US-2016307116-A1 · Oct 20, 2016 · US
US10794839B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10794839-B2 |
| Application number | US-201916283690-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 22, 2019 |
| Priority date | Feb 22, 2019 |
| Publication date | Oct 6, 2020 |
| Grant date | Oct 6, 2020 |
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A semiconductor metrology tool inspects an area of a semiconductor wafer. The inspected area includes a plurality of instances of a 3D semiconductor structure arranged periodically in at least one dimension. A computer system generates a model of a respective instance of the 3D semiconductor structure based on measurements collected during the inspection. The computer system renders an image of the model that shows a 3D shape of the model and provides the image to a device for display.
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What is claimed is: 1. A non-transitory computer-readable storage medium storing one or more programs for execution by one or more processors of a computer system, the one or more programs including instructions for: based on inspection by a semiconductor metrology tool of an area of a semiconductor wafer that includes a plurality of instances of a three-dimensional (3D) semiconductor structure arranged periodically, generating a model of a respective instance of the 3D semiconductor structure; rendering an image of the model that shows a 3D shape of the model, the image comprising: at least one of a top surface or a bottom surface of the respective instance of the 3D semiconductor structure, and a user-selectable translucent cross-section of the respective instance of the 3D semiconductor structure between the top and bottom surfaces; and providing the image to a device for display. 2. The computer-readable storage medium of claim 1 , wherein the image comprises a projection of the model to be displayed in two dimensions. 3. The computer-readable storage medium of claim 1 , wherein the image shows uncertainty for the 3D shape in the model. 4. The computer-readable storage medium of claim 1 , wherein the image indicates deviation of the 3D shape or a cross-section of the 3D shape from a nominal shape. 5. The computer-readable storage medium of claim 1 , wherein the image comprises an animation that successively shows successive portions of the 3D shape. 6. The computer-readable storage medium of claim 1 , wherein: the image is a 3D stereographic image; and providing the image comprises sending the image to a 3D stereographic viewer. 7. The computer-readable storage medium of claim 1 , wherein: the plurality of instances of the 3D semiconductor structure comprises a periodic arrangement of memory holes in a 3D memory; and the respective instance of the 3D semiconductor structure comprises a respective memory hole. 8. The computer-readable storage medium of claim 7 , wherein the image shows an elliptical shape of the respective memory hole for multiple cross-sections of the respective memory hole. 9. The computer-readable storage medium of claim 8 , wherein the image shows the helicity of the respective memory hole for the multiple cross-sections, wherein the helicity indicates change in orientation of the elliptical shape. 10. The computer-readable storage medium of claim 7 , wherein the image indicates deviation from an elliptical shape for the multiple cross-sections. 11. The computer-readable storage medium of claim 7 , wherein the image shows tilt of the respective memory hole. 12. The computer-readable storage medium of claim 1 , wherein: the plurality of instances of the 3D semiconductor structure comprises a periodic arrangement of finFETs; and the respective instance of the 3D semiconductor structure comprises a respective finFET or a portion of a respective finFET. 13. The computer-readable storage medium of claim 1 , wherein: the plurality of instances of the 3D semiconductor structure comprises an array of DRAM cells; and the respective instance of the 3D semiconductor structure comprises a respective DRAM cell or a portion of a respective DRAM cell. 14. The computer-readable storage medium of claim 1 , wherein generating the model of the respective instance of the 3D semiconductor structure comprises: obtaining a geometric model of the 3D semiconductor structure with parameterized dimensions; and using measurements collected during the inspecting to determine values of the parameterized dimensions. 15. The computer-readable storage medium of claim 1 , wherein generating the model of the respective instance of the 3D semiconductor structure comprises: obtaining sets of measurements for varying instances of the 3D semiconductor structure, the sets being labeled with respective values of dimensions; and performing machine learning, using the sets and measurements collected during the inspecting, to determine values of the dimensions for the respective instance, wherein the generating is performed without using a parameterized geometric model of the 3D semiconductor structure. 16. The computer-readable storage medium of claim 1 , wherein inspecting the area of the semiconductor wafer comprises performing an optical metrology technique selected from the group consisting of spectroscopic ellipsometry, single-wavelength ellipsometry, beam-profile ellipsometry, beam-profile reflectometry, single-wavelength reflectometry, angle-resolved reflectometry, spectroscopic reflectometry, scatterometry, and Raman spectroscopy. 17. The computer-readable storage medium of claim 1 , wherein inspecting the area of the semiconductor wafer comprises performing small-angle x-ray scattering. 18. A non-transitory computer-readable storage medium storing one or more programs for execution by one or more processors of a computer system, the one or more programs including instructions for: based on inspection by a semiconductor metrology tool of an area of a semiconductor wafer that includes a plurality of instances of a three-dimensional (3D) semiconductor structure arranged periodically, generating a model of a respective instance of the 3D semiconductor structure; rendering from a first perspective a first augmented-reality or virtual-reality (AR/VR) image of the model that shows a 3D shape of the model; providing the first AR/VR image to an AR/VR viewing device for display; after providing the first AR/VR image to the AR/VR viewing device for display, receiving user input requesting a change in perspective; in response to the user input, rendering a second AR/VR image of the model from a second perspective; and providing the second AR/VR image to the AR/VR viewing device for display. 19. A non-transitory computer-readable storage medium storing one or more programs for execution by one or more processors of a computer system, the one or more programs including instructions for: based on inspection by a semiconductor metrology tool of an area of a semiconductor wafer that includes a plurality of instances of a three-dimensional (3D) semiconductor structure arranged periodically, generating a model of a respective instance of the 3D semiconductor structure; rendering a first augmented-reality or virtual-reality (AR/VR) image of the model that shows a 3D shape of the model with an appearance that corresponds to values of a parameter of the model as determined based on measurements collected during the inspection; providing the first AR/VR image to an AR/VR viewing device for display; after providing the first AR/VR image to the AR/VR viewing device for display, receiving user input requesting a change to the values of the parameter; in response to the user input, changing the values of the parameter for the model; rendering a second AR/VR image of the model with an appearance that corresponds to the changed values; and providing the second AR/VR image to the AR/VR viewing device for display. 20. A non-transitory computer-readable storage medium storing one or more programs for execution by one or more processors of a computer system, the one or more programs including instructions for: based on inspection by a semiconductor metrology tool of an area of a semiconductor wafer that includes a periodic arrangement of memory holes in a three-dimensional (3D) semiconductor memory, generating a model of a respective memory hole; rendering an image of the model that shows a 3D shape of the model, w
Integrated device layouts · CPC title
comprising FinFETs · CPC title
Fin field-effect transistors [FinFET] · CPC title
Three-dimensional [3D] modelling for computer graphics · CPC title
Manipulating three-dimensional [3D] models or images for computer graphics · CPC title
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