Semiconductor device and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-10790283-B2
Application number	US-201916398142-A
Country	US
Kind code	B2
Filing date	Apr 29, 2019
Priority date	Jul 15, 2016
Publication date	Sep 29, 2020
Grant date	Sep 29, 2020

Abstract

A semiconductor device manufacturing method includes forming fins in first and second regions defined on a substrate. The fins include first fin, second fin, third fin, and fourth fin. A dielectric layer is formed over fins and a work function adjustment layer is formed over dielectric layer. A hard mask is formed covering third and fourth fins. A first conductive material layer is formed over first fin and not over second fin. A second conductive material layer is formed over first and second fins. A first metal gate electrode fill material is formed over first and second fins. The hard mask covering third and fourth fins is removed. A third conductive material layer is formed over third fin and not over fourth fin. A fourth conductive material layer is formed over third and fourth fins, and a second metal gate electrode fill material is formed over third and fourth fins.

First claim

What is claimed is:

1. A semiconductor device comprising a plurality of fins in a first and a second region defined on a semiconductor substrate,
wherein the plurality of fins includes a first group of fins arranged in the first region and a second group of fins arranged in the second region;
a first conductive material layer overlying a first fin in the first region;
a second conductive material layer overlying the first fin in the first region and a second fin in the first region;
a third conductive material layer overlying a first fin in the second region;
a fourth conductive material layer overlying the first fin in the second region and a second fin in the second region; and
a work function adjustment material between the second fin in the first region and the second conductive material layer;
wherein the second conductive material layer and the third conductive material layer are in direct contact with each other at a third region of the semiconductor substrate between the first region and the second region.

2. The semiconductor device of claim 1 , further comprising the work function adjustment material between the first fin in the first region and the first conductive material layer.

3. The semiconductor device of claim 2 , wherein the work function adjustment material comprises a first work function adjustment material layer and a second work function adjustment material layer, wherein the first work function adjustment material layer and the second work function adjustment material layer comprise different materials.

4. The semiconductor device of claim 1 , further comprising a first metal gate fill material disposed over the first region and a second metal gate fill material disposed over the second region, wherein the first metal gate fill material and the second metal gate fill materials are different materials.

5. The semiconductor device of claim 1 , wherein the work function adjustment material comprises a first work function adjustment material layer and a second work function adjustment material layer, wherein the first work function adjustment material layer and the second work function adjustment material layer comprise different materials.

6. The semiconductor device of claim 1 , further comprising the work function adjustment material between the first fin in the second region and the third conductive material layer, and between the second fin in the second region and the fourth conductive material layer.

7. The semiconductor device of claim 6 , wherein the work function adjustment material comprises a first work function adjustment material layer and a second work function adjustment material layer, wherein the first work function adjustment material layer and the second work function adjustment material layer comprise different materials.

8. The semiconductor device claim 6 , wherein the fourth conductive material layer is in direct contact with the work function adjustment material.

9. The semiconductor device of claim 1 , wherein:
the first region comprises P-type field effect transistors and the second region comprises N-type field effect transistors,
the first portion of the first region comprises an ultra-low voltage threshold transistor,
the second portion of the first region comprises a standard voltage threshold transistor,
the first portion of the second region comprises a standard voltage threshold transistor, and
the second portion of the second region comprises an ultra-low voltage threshold transistor.

10. A semiconductor device comprising a plurality of fins in a first and a second region defined on a semiconductor substrate,
wherein the plurality of fins includes a first group of fins arranged in the first region and a second group of fins arranged in the second region;
a first conductive material layer overlying a first fin in the first region;
a second conductive material layer overlying the first fin in the first region and a second fin in the first region;
a third conductive material layer overlying a first fin in the second region;
a fourth conductive material layer overlying the first fin in the second region and a second fin of the second region;
a first metal gate fill material overlying the first region;
a second metal gate fill material overlying the second region,
wherein the first metal gate fill material and the second metal gate fill material are separated from each other in a third region of the semiconductor substrate between the first region and the second region by the second conductive material layer, third conductive material layer, and the fourth conductive material layer; and
a work function adjustment material between the first fin in the first region and the first conductive material layer,
wherein the work function adjustment material comprises a first work function adjustment material layer and a second work function adjustment material layer, wherein the first work function adjustment material layer and the second work function adjustment material layer comprise different materials.

11. The semiconductor device of claim 10 , wherein the third conductive layer is in direct contact with the second conductive layer and the fourth conductive layer.

12. The semiconductor device of claim 10 , wherein the first conductive material layer, second conductive material layer, third conductive material layer, and fourth conductive material layer are in direct contact with the second work function adjustment layer.

13. The semiconductor device of claim 10 , wherein the first work function adjustment material layer and the second work function adjustment material layer are between the third conductive material layer and the first fin in the second region.

14. The semiconductor device of claim 13 , wherein the fourth conductive material layer is in direct contact with the second work function adjustment material layer.

15. A semiconductor device comprising:
a first field effect transistor (FET) including a first fin and a second FET including a second fin formed on a semiconductor substrate;
a first work function adjustment layer covering the first and second fins;
a second work function adjustment layer covering the first work function adjustment layer covering the first and second fins,
wherein the first work adjustment layer and the second work function adjustment layer are different materials;
a first conductive material layer covering the second work function adjustment layer covering the first fin;
a second conductive material layer covering the first conductive material layer;
a third conductive material layer covering the second work function adjustment layer covering the second fin;
a fourth conductive material layer covering the third conductive material layer;
a first metal gate fill material covering the second conductive material layer and the first conductive material layer covering the first fin; and
a second metal gate fill material covering the fourth conductive material layer and the third conductive material layer covering the second fin,
wherein the first metal gate fill material and the second metal gate fill material are separated from each other by the third conductive material layer and the fourth conductive material layer.

16. The semiconductor device of claim 15 , wherein the second conductive material layer and the fourth conductive material layer are separated from each other by the third conductive material layer.

17. The semiconductor device of claim 15 , wherein the first conductive material layer is in direct contact with the second work function adjustment

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Liao Chia-Chun
• Liang Chun-Sheng
• Wang Shu-Hui
• Chang Shih-Hsun
• Chen Yi-Jen

Classifications

• H10D64/666

  the conductor further comprising additional layers · CPC title

• H10D84/0193

  the components including FinFETs · CPC title

• H10D84/0177

  the gate conductors having different materials or different implants · CPC title

• H10D84/038

  using silicon technology, e.g. SiGe · CPC title

• H10D64/667

  the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers (having lateral variation H10D64/671) · CPC title