Integrated circuit using photonic bandgap structure

Patent metadata

Field	Value
Publication number	US-10788367-B2
Application number	US-201916715531-A
Country	US
Kind code	B2
Filing date	Dec 16, 2019
Priority date	Oct 31, 2017
Publication date	Sep 29, 2020
Grant date	Sep 29, 2020

Abstract

On an integrated circuit (IC) die, sensors are configured to receive electromagnetic energy and to generate signals in response to the electromagnetic energy. An encapsulation material encapsulates the IC die and the sensors. A filter structure includes a diffusion of particles within the encapsulation material. The filter structure includes: a first region configured to pass a first band of the electromagnetic energy to the sensors or to block the first band of the electromagnetic energy from passing to the sensors; and a second region configured to pass a second band of the electromagnetic energy to the sensors or to block the second band of the electromagnetic energy from passing to the sensors. The encapsulation material has a first intrinsic property, and the particles have a second intrinsic property that is different from the first intrinsic property.

First claim

What is claimed is:

1. A package comprising:
an integrated circuit (IC) die;
sensors on the IC die, the sensors configured to receive electromagnetic energy and to generate signals in response to the electromagnetic energy;
an encapsulation material encapsulating the IC die and the sensors; and
a filter structure including a diffusion of particles within the encapsulation material, the filter structure including: a first region configured to pass a first band of the electromagnetic energy to the sensors or to block the first band of the electromagnetic energy from passing to the sensors; and a second region configured to pass a second band of the electromagnetic energy to the sensors or to block the second band of the electromagnetic energy from passing to the sensors;
the encapsulation material having a first intrinsic property, and the particles having a second intrinsic property that is different from the first intrinsic property.

2. The package of claim 1 , wherein the filter structure is a photonic wave collimating structure or a multilayer photonic bandgap structure.

3. The package of claim 1 , wherein the filter structure: has an open path for a particular band of the electromagnetic energy to pass to a first one of the sensors; and is configured to block the particular band of the electromagnetic energy from passing to a second one of the sensors.

4. The package of claim 1 , wherein the filter structure includes a matrix of periodically spaced nodes within the encapsulation material, the encapsulation material having the first intrinsic property, and the nodes having the second intrinsic property.

5. The package of claim 1 , wherein the filter structure is a photonic resonant structure.

6. A package comprising:
an integrated circuit (IC) die;
sensors on the IC die, the sensors configured to receive electromagnetic energy and to generate signals in response to the electromagnetic energy;
an encapsulation material encapsulating the IC die and the sensors; and
a filter structure within the encapsulation material, in which the filter structure is a photonic wave collimating structure or a multilayer photonic bandgap structure, the filter structure including: a first region configured to pass a first band of the electromagnetic energy to the sensors or to block the first band of the electromagnetic energy from passing to the sensors; and a second region configured to pass a second band of the electromagnetic energy to the sensors or to block the second band of the electromagnetic energy from passing to the sensors.

7. The package of claim 6 , wherein the filter structure includes a diffusion of particles within the encapsulation material, the encapsulation material having a first intrinsic property, and the particles having a second intrinsic property that is different from the first intrinsic property.

8. The package of claim 6 , wherein the filter structure: has an open path for a particular band of the electromagnetic energy to pass to a first one of the sensors; and is configured to block the particular band of the electromagnetic energy from passing to a second one of the sensors.

9. The package of claim 6 , wherein the filter structure includes a matrix of periodically spaced nodes within the encapsulation material, the encapsulation material having a first intrinsic property, and the nodes having a second intrinsic property that is different from the first intrinsic property.

10. The package of claim 6 , wherein the filter structure is a photonic resonant structure.

11. A package comprising:
an integrated circuit (IC) die;
an emitter on the IC die, the emitter configured to emit electromagnetic energy;
an encapsulation material encapsulating the IC die and the emitter; and
a filter structure including a diffusion of particles within the encapsulation material, the filter structure configured to pass a first band of the electromagnetic energy emitted by the emitter while blocking a second band of the electromagnetic energy emitted by the emitter;
the encapsulation material having a first intrinsic property, and the particles having a second intrinsic property that is different from the first intrinsic property.

12. The package of claim 11 , wherein the filter structure is a photonic wave collimating structure or a multilayer photonic bandgap structure.

13. The package of claim 11 , wherein the filter structure includes a matrix of periodically spaced nodes within the encapsulation material, the encapsulation material having the first intrinsic property, and the nodes having the second intrinsic property.

14. The package of claim 11 , further comprising a photonic resonant structure between the emitter and the filter structure.

15. A package comprising:
an integrated circuit (IC) die;
an emitter on the IC die, the emitter configured to emit electromagnetic energy;
an encapsulation material encapsulating the IC die and the emitter; and
a filter structure within the encapsulation material, in which the filter structure is a photonic wave collimating structure or a multilayer photonic bandgap structure, the filter structure configured to pass a first band of the electromagnetic energy emitted by the emitter while blocking a second band of the electromagnetic energy emitted by the emitter.

16. The package of claim 15 , wherein the filter structure includes a diffusion of particles within the encapsulation material, the encapsulation material having a first intrinsic property, and the particles having a second intrinsic property that is different from the first intrinsic property.

17. The package of claim 15 , wherein the filter structure includes a matrix of periodically spaced nodes within the encapsulation material, the encapsulation material having a first intrinsic property, and the nodes having a second intrinsic property that is different from the first intrinsic property.

18. The package of claim 15 , further comprising a photonic resonant structure between the emitter and the filter structure.

Assignees

• Texas Instruments Inc

Inventors

• Cook Benjamin Stassen
• Revier Daniel Lee

Classifications

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title

• H10W72/0198

  batch processes · CPC title

• H10W72/884

  Die-attach connectors and bond wires · CPC title

• H10W90/756

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W90/736

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title