Thin film transistor substrate, method of manufacturing the same, and method of manufacturing a display device including the same

Patent metadata

Field	Value
Publication number	US-10777582-B2
Application number	US-201816120898-A
Country	US
Kind code	B2
Filing date	Sep 4, 2018
Priority date	Sep 5, 2017
Publication date	Sep 15, 2020
Grant date	Sep 15, 2020

Abstract

A method of manufacturing a thin film transistor substrate may include forming a gate electrode on a base substrate, forming a gate insulation layer on the base substrate, the gate insulation layer covering the gate electrode, performing a simultaneous ultraviolet ray irradiation and thermal treatment (SUT) process by irradiating an ultraviolet ray at the gate insulation layer and supplying heat to the gate insulation layer at substantially the same time, forming an active pattern on the gate insulation layer, the active pattern overlapping the gate electrode, and forming a source electrode and a drain electrode on the gate insulation layer, the source electrode and the drain electrode being electrically connected to the active pattern.

First claim

What is claimed is:

1. A method of manufacturing a thin film transistor substrate, the method comprising:
forming a gate electrode on a base substrate;
forming a gate insulation layer on the base substrate, the gate insulation layer covering the gate electrode;
performing a simultaneous ultraviolet ray irradiation and thermal treatment (SUT) process by irradiating an ultraviolet ray at the gate insulation layer and supplying heat to the gate insulation layer at substantially the same time;
forming an active pattern on the gate insulation layer, the active pattern overlapping the gate electrode; and
forming a source electrode and a drain electrode on the gate insulation layer, the source electrode and the drain electrode being electrically connected to the active pattern,
wherein the SUT process is performed after forming the gate insulation layer and before forming the active pattern.

2. The method of claim 1 , wherein the gate electrode, the gate insulation layer, the active pattern, the source electrode, and the drain electrode are formed by a sputtering process.

3. The method of claim 1 , wherein the gate insulation layer comprises a first surface and a second surface opposite to each other, and
wherein the ultraviolet ray is irradiated at the first surface and the heat is supplied to the second surface.

4. The method of claim 1 , wherein the SUT process is performed at a temperature in a range of 100° C. to 250° C.

5. The method of claim 1 , wherein the ultraviolet ray has a wavelength in a range of 185 nm to 370 nm.

6. The method of claim 1 , wherein the SUT process is performed for a duration in a range of 1 minute to 3 hours.

7. The method of claim 1 , wherein the SUT process is performed in an oxygen atmosphere.

8. The method of claim 1 , further comprising forming an etch-stop layer on the active pattern before forming the source electrode and the drain electrode.

9. The method of claim 1 , further comprising:
forming a first electrode on the base substrate; and
forming a second electrode on the gate insulation layer, the second electrode overlapping the first electrode,
wherein a resistive random access memory is defined by the first electrode, the gate insulation layer, and the second electrode.

10. The method of claim 9 , wherein the gate insulation layer comprises a first region located between the gate electrode and the active pattern and a second region located between the first electrode and the second electrode, and
wherein the SUT process is performed in the first region and is not performed in the second region.

11. The method of claim 10 , wherein the ultraviolet ray is irradiated at the first region and is not irradiated at the second region.

12. The method of claim 9 , wherein the first electrode is formed together with the gate electrode, and
wherein the second electrode is formed together with the source electrode and the drain electrode.

13. A thin film transistor substrate, comprising:
a base substrate;
a gate electrode disposed on the base substrate;
a first electrode disposed on the base substrate;
a gate insulation layer disposed on the base substrate and covering the gate electrode;
an active pattern disposed on the gate insulation layer and overlapping the gate electrode;
a source electrode and a drain electrode disposed on the gate insulation layer and electrically connected to the active pattern; and
a second electrode disposed the gate insulation layer and overlapping the first electrode,
wherein the gate insulation layer comprises a first region and a second region, the first region being located between the gate electrode and the active pattern and the second region comprising the second electrode,
wherein a contact angle against a water droplet of the first region is in a range from 1 degree to 40 degree, and
wherein a resistive random access memory is defined by the first electrode, the second region of the gate insulation layer, and the second electrode.

14. The thin film transistor substrate of claim 13 , wherein the contact angle against the water droplet of the first region is less than a contact angle against a water droplet of the second region.

15. The thin film transistor substrate of claim 13 , wherein an amount of oxygen included in the first region is greater than an amount of oxygen included in the second region.

16. A method of manufacturing a display device, the method comprising:
forming a gate electrode on a base substrate;
forming a gate insulation layer on the base substrate, the gate insulation layer covering the gate electrode;
performing a simultaneous ultraviolet ray irradiation and thermal treatment (SUT) process by irradiating an ultraviolet ray at the gate insulation layer and supplying heat to the gate insulation layer at substantially the same time;
forming an active pattern on the gate insulation layer, the active pattern overlapping the gate electrode;
forming a source electrode and a drain electrode on the gate insulation layer, the source electrode and the drain electrode being electrically connected to the active pattern;
forming a pixel electrode electrically connected to the drain electrode;
forming a pixel defining layer on the pixel electrode, the pixel defining layer exposing a portion of the pixel electrode;
forming an organic light emitting layer on the exposed pixel electrode; and
forming a common electrode on the organic light emitting layer and the pixel defining layer,
wherein the SUT process is performed after forming the gate insulation layer and before forming the active pattern.

17. The method of claim 16 , wherein the gate electrode, the gate insulation layer, the active pattern, the source electrode, and the drain electrode are formed by a sputtering process.

Assignees

• Samsung Display Co Ltd
• Yonsei Univ Industry Foundation Yonsei Uif

Inventors

• Kim Taesang
• Kim Hyunjae
• LIM Junhyung
• Tak Youngjun

Classifications

• H10D30/67 Primary

  Thin-film transistors [TFT] {(Stacked nanowire, nanosheet or nanoribbon FETs H10D30/501)} · CPC title

• H10D86/0229

  characterised by control of the annealing or irradiation parameters · CPC title

• H10D99/00

  Subject matter not provided for in other groups of this subclass · CPC title

• H10D86/423

  comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO · CPC title

• H10D30/6755

  Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate · CPC title