Display apparatus
US-2024414942-A1 · Dec 12, 2024 · US
Thin film transistor, method of manufacturing the same and flat panel display device having the same
US9035313B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9035313-B2 |
| Application number | US-201213408825-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 29, 2012 |
| Priority date | Jun 30, 2008 |
| Publication date | May 19, 2015 |
| Grant date | May 19, 2015 |
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Abstract
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A thin film transistor (TFT) using an oxide semiconductor as an active layer, a method of manufacturing the TFT, and a flat panel display device having the TFT include a gate electrode formed on a substrate; an active layer made of an oxide semiconductor and insulated from the gate electrode by a gate insulating layer; source and drain electrodes coupled to the active layer; and an interfacial stability layer formed on one or both surfaces of the active layer. In the TFT, the interfacial stability layer is formed of an oxide having a band gap of 3.0 to 8.0 eV. Since the interfacial stability layer has the same characteristic as a gate insulating layer and a passivation layer, chemically high interface stability is maintained. Since the interfacial stability layer has a band gap equal to or greater than that of the active layer, charge trapping is physically prevented.
First claim
Opening claim text (preview).
What is claimed is: 1. A flat panel display device, comprising: a first substrate having disposed thereon: a plurality of pixels, each of the plurality of pixels having a first electrode; and a plurality of thin film transistors; wherein the pixels are defined by a plurality of first and second conductive lines, the thin film transistors control signals supplied to the respective pixels, and the first electrodes are respectively coupled to the thin film transistors; a sec…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10D30/6755Primary
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US9035313B2 cover?
- A thin film transistor (TFT) using an oxide semiconductor as an active layer, a method of manufacturing the TFT, and a flat panel display device having the TFT include a gate electrode formed on a substrate; an active layer made of an oxide semiconductor and insulated from the gate electrode by a gate insulating layer; source and drain electrodes coupled to the active layer; and an interfacial …
- Who is the assignee on this patent?
- Jeong Jae-Kyeong, Jeong Jong-Han, Kim Min-Kyu, and 4 more
- What technology area does this patent fall under?
- Primary CPC classification H10D30/6755. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue May 19 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).