Heat treatment method for dopant introduction

Patent metadata

Field	Value
Publication number	US-10777415-B2
Application number	US-201816232698-A
Country	US
Kind code	B2
Filing date	Dec 26, 2018
Priority date	Feb 5, 2018
Publication date	Sep 15, 2020
Grant date	Sep 15, 2020

Abstract

Hydrogen annealing for heating a semiconductor wafer on which a thin film containing a dopant is deposited to an annealing temperature under an atmosphere containing hydrogen is performed. A native oxide film is inevitably formed between the thin film containing the dopant and the semiconductor wafer, however, by performing hydrogen annealing, the dopant atoms diffuse relatively easily in the native oxide film and accumulate at the interface between the front surface of the semiconductor wafer and the native oxide film. Subsequently, the semiconductor wafer is preheated to a preheating temperature under a nitrogen atmosphere, and then, flash heating treatment in which the front surface of the semiconductor wafer is heated to a peak temperature for less than one second is performed. The dopant atoms are diffused and activated in a shallow manner from the front surface of the semiconductor wafer, thus, the low-resistance and extremely shallow junction is obtained.

First claim

What is claimed is:

1. A heat treatment method for introducing a dopant into a semiconductor substrate, said method comprising the steps of:
(a) heating the semiconductor substrate on which a thin film containing the dopant is deposited to a first temperature under an atmosphere containing hydrogen; and
(b) heating said semiconductor substrate to a second temperature higher than said first temperature for less than one second in an atmosphere of a gas different from hydrogen.

2. The heat treatment method according to claim 1 , further comprising the step of
(c) heating said semiconductor substrate to a temperature higher than said first temperature and lower than said second temperature between said step (a) and the said step (b).

3. The heat treatment method according to claim 1 , wherein
said first temperature is 300° C. or more and 600° C. or less.

4. The heat treatment method according to claim 1 , wherein,
in said step (b), said semiconductor substrate is heated under a nitrogen atmosphere.

5. The heat treatment method according to claim 1 , wherein,
in said step (b), said semiconductor substrate is heated by irradiating said semiconductor substrate with a flash of light from a flash lamp.

6. The heat treatment method according to claim 1 , wherein
a film of silicon dioxide containing the dopant is deposited on said semiconductor substrate.

7. The heat treatment method according to claim 1 , wherein
a native oxide film is formed between the thin film containing said dopant and a front surface of said semiconductor substrate.

Assignees

• Screen Holdings Co Ltd

Inventors

• Fuse Kazuhiko
• Kawarazaki Hikaru
• TANIMURA Hideaki
• Kato Shinichi

Classifications

• H10P95/94

  Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma · CPC title

• H10P95/90 Primary

  Thermal treatments, e.g. annealing or sintering · CPC title

• H10P72/7614

  characterised by a plurality of individual support members, e.g. support posts or protrusions · CPC title

• H10P72/7602 Primary

  the wafers being placed on a robot blade or gripped by a gripper for conveyance · CPC title

• H10P72/0602

  Temperature monitoring · CPC title