Optical device wafer processing method

Patent metadata

Field	Value
Publication number	US-10763390-B2
Application number	US-201815876423-A
Country	US
Kind code	B2
Filing date	Jan 22, 2018
Priority date	Jan 23, 2017
Publication date	Sep 1, 2020
Grant date	Sep 1, 2020

Abstract

An optical device wafer processing method for dividing an optical device wafer along a plurality of division lines to obtain a plurality of individual device chips includes applying a laser beam to a wafer substrate along each division line to thereby form a laser processed groove along each division line, and next forming a V groove along each laser processed groove on the optical device wafer by using a cutting blade having a V-shaped tip in the condition where each laser processed groove is removed by the cutting blade. A crack is formed so as to extend from the bottom of each laser processed groove due to a load applied from the cutting blade, thereby dividing the optical device wafer into the individual device chips. The depth of each laser processed groove is set smaller than the depth of cut by the cutting blade.

First claim

What is claimed is:

1. An optical device wafer processing method for dividing an optical device wafer along a plurality of division lines formed on the front side of said optical device wafer to obtain a plurality of individual device chips, said optical device wafer being composed of a wafer substrate and a light emitting layer formed on said wafer substrate, said light emitting layer having a plurality of optical devices individually corresponding to said device chips, said optical device wafer processing method comprising:
a laser processed groove forming step of applying a laser beam having an absorption wavelength to said wafer substrate, to said optical device wafer along each division line, thereby forming a plurality of laser processed grooves along each division line on said optical device wafer, wherein each of said plurality of laser processed grooves has a plurality of surfaces; and
a V groove dividing step of forming a V groove along each laser processed groove on said optical device wafer by using a cutting blade having a V-shaped tip in the condition where all of said surfaces of said plurality of laser processed grooves are removed by said cutting blade, after performing said laser processed groove forming step, and simultaneously dividing said optical device wafer into said individual device chips due to a load applied from said cutting blade;
the depth of each laser processed groove being set smaller than the depth of cut by said cutting blade.

2. The optical device wafer processing method according to claim 1 , wherein each of said plurality of laser processed grooves has a depth in said optical wafer, and said depths of at least two of said plurality of laser processed grooves are different.

3. The optical device wafer processing method according to claim 1 , wherein said laser processed groove forming step includes forming at least three laser processed grooves along each division line on said optical device wafer.

4. An optical device wafer processing method for dividing an optical device wafer along a plurality of division lines formed on the front side of said optical device wafer to obtain a plurality of individual device chips, said optical device wafer being composed of a wafer substrate and a light emitting layer formed on said wafer substrate, said light emitting layer having a plurality of optical devices individually corresponding to said device chips, said optical device wafer processing method comprising:
a laser processed groove forming step of applying a laser beam having an absorption wavelength to said wafer substrate, to said optical device wafer along each division line, thereby forming a plurality of laser processed grooves along each division line on said optical device wafer, wherein each of said plurality of laser processed grooves has a plurality of surfaces;
a V groove forming step of forming a V groove along each division line on said optical device wafer by using a cutting blade having a V-shaped tip, where all of said surfaces of said plurality of laser processed grooves are removed by said cutting blade, after performing said laser processed groove forming step; and
a dividing step of applying an external force to said optical device wafer along each V groove after performing said V groove forming step, thereby dividing said optical device wafer into said individual device chips;
the depth of each laser processed groove being set smaller than the depth of cut by said cutting blade.

5. The optical device wafer processing method according to claim 4 , wherein said dividing step includes applying an external force to a side of said optical device wafer that is opposite to the front side of said optical device wafer, by each V groove.

6. The optical device wafer processing method according to claim 4 , wherein said laser processed groove forming step includes forming at least three laser processed grooves along each division line on said optical device wafer.

7. An optical device wafer processing method for dividing an optical device wafer along a plurality of division lines formed on the front side of said optical device wafer to obtain a plurality of individual device chips, said optical device wafer being composed of a wafer substrate and a light emitting layer formed on said wafer substrate, said light emitting layer having a plurality of optical devices individually corresponding to said device chips, said optical device wafer processing method comprising:
a laser processed groove forming step of applying a laser beam having an absorption wavelength to said wafer substrate, to said optical device wafer along each division line, thereby forming a plurality of laser processed grooves along each division line on said optical device wafer;
a V groove forming step of forming a V groove along each division line on said optical device wafer by using a cutting blade having a V-shaped tip in the condition where said plurality of laser processed grooves are removed by said cutting blade, after performing said laser processed groove forming step; and
a dividing step of applying an external force to said optical device wafer along each V groove after performing said V groove forming step, thereby dividing said optical device wafer into said individual device chips;
the depth of each laser processed groove being set smaller than the depth of cut by said cutting blade, wherein said depths of at least two of said plurality of laser processed grooves are different.

8. The optical device wafer processing method according to claim 7 , wherein said dividing step includes applying an external force to a side of said optical device wafer that is opposite to the front side of said optical device wafer, by each V groove.

9. The optical device wafer processing method according to claim 8 , wherein said dividing step includes applying the external force with a pressure blade to the side of said optical device wafer that is opposite to the front side of said optical device wafer.

Assignees

• Disco Corp

Inventors

• Okamura Takashi

Classifications

• H10P54/00

  Cutting or separating of wafers, substrates or parts of devices · CPC title

• H10P52/00 Primary

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title

• H10H20/819

  characterised by their shape, e.g. curved or truncated substrates · CPC title

• H10H20/01 Primary

  Manufacture or treatment · CPC title

• H10H20/825

  containing nitrogen, e.g. GaN · CPC title