Optical device wafer processing method

Patent metadata

Field	Value
Publication number	US-2018212098-A1
Application number	US-201815876423-A
Country	US
Kind code	A1
Filing date	Jan 22, 2018
Priority date	Jan 23, 2017
Publication date	Jul 26, 2018
Grant date	—

Abstract

An optical device wafer processing method for dividing an optical device wafer along a plurality of division lines to obtain a plurality of individual device chips includes applying a laser beam to a wafer substrate along each division line to thereby form a laser processed groove along each division line, and next forming a V groove along each laser processed groove on the optical device wafer by using a cutting blade having a V-shaped tip in the condition where each laser processed groove is removed by the cutting blade. A crack is formed so as to extend from the bottom of each laser processed groove due to a load applied from the cutting blade, thereby dividing the optical device wafer into the individual device chips. The depth of each laser processed groove is set smaller than the depth of cut by the cutting blade.

First claim

What is claimed is:

1 . An optical device wafer processing method for dividing an optical device wafer along a plurality of division lines formed on the front side of said optical device wafer to obtain a plurality of individual device chips, said optical device wafer being composed of a wafer substrate and a light emitting layer formed on said wafer substrate, said light emitting layer having a plurality of optical devices individually corresponding to said device chips, said optical device wafer processing method comprising:
a laser processed groove forming step of applying a laser beam having an absorption wavelength to said wafer substrate, to said optical device wafer along each division line, thereby forming a laser processed groove along each division line on said optical device wafer; and a V groove dividing step of forming a V groove along each laser processed groove on said optical device wafer by using a cutting blade having a V-shaped tip in the condition where each laser processed groove is removed by said cutting blade, after performing said laser processed groove forming step, and simultaneously dividing said optical device wafer into said individual device chips by forming a crack extending from the bottom of each laser processed groove due to a load applied from said cutting blade; the depth of each laser processed groove being set smaller than the depth of cut by said cutting blade.

2 . An optical device wafer processing method for dividing an optical device wafer along a plurality of division lines formed on the front side of said optical device wafer to obtain a plurality of individual device chips, said optical device wafer being composed of a wafer substrate and a light emitting layer formed on said wafer substrate, said light emitting layer having a plurality of optical devices individually corresponding to said device chips, said optical device wafer processing method comprising:
a laser processed groove forming step of applying a laser beam having an absorption wavelength to said wafer substrate, to said optical device wafer along each division line, thereby forming a laser processed groove along each division line on said optical device wafer; a V groove forming step of forming a V groove along each laser processed groove on said optical device wafer by using a cutting blade having a V-shaped tip in the condition where each laser processed groove is removed by said cutting blade, after performing said laser processed groove forming step; and a dividing step of applying an external force to said optical device wafer along each V groove after performing said V groove forming step, thereby dividing said optical device wafer into said individual device chips; the depth of each laser processed groove being set smaller than the depth of cut by said cutting blade.

3 . The optical device wafer processing method according to claim 1 , wherein said laser processed groove forming step includes the step of forming a plurality of laser processed grooves along each division line in an area where said optical device wafer is to be removed by said cutting blade, whereby the amount of said optical device wafer to be removed by said cutting blade is reduced in said V groove dividing step.

Assignees

• Disco Corp

Inventors

• Okamura Takashi

Classifications

• H10P54/00

  Cutting or separating of wafers, substrates or parts of devices · CPC title

• B28D5/0011

  with preliminary treatment, e.g. weakening by scoring · CPC title

• B23K26/364

  for making a groove or trench, e.g. for scribing a break initiation groove · CPC title

• H10P52/00 Primary

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title

• H01L33/20

  Electricity · mapped topic