Method and apparatus for gas abatement

Patent metadata

Field	Value
Publication number	US-10757797-B2
Application number	US-201816206276-A
Country	US
Kind code	B2
Filing date	Nov 30, 2018
Priority date	Jul 24, 2015
Publication date	Aug 25, 2020
Grant date	Aug 25, 2020

Abstract

Embodiments disclosed herein include a plasma source, an abatement system and a vacuum processing system for abating compounds produced in semiconductor processes. In one embodiment, a plasma source includes a dielectric tube and a coil antenna surrounding the tube. The coil antenna includes a plurality of turns, and at least one turn is shorted. Selectively shorting one or more turns of the coil antenna helps reduce the inductance of the coil antenna, allowing higher power to be supplied to the coil antenna that covers more processing volume. Higher power supplied to the coil antenna and larger processing volume lead to an improved DRE.

First claim

The invention claimed is:

1. A plasma source, comprising:
a dielectric tube;
a coil antenna surrounding the dielectric tube, wherein the coil antenna comprises a plurality of turns having a first group of turns, a second group of turns, and a third group of turns;
a first terminal coupled to a first end of the coil antenna and configured to couple to a power source;
a second terminal coupled a second end of the coil antenna and configured to couple to the power source or ground;
a third terminal coupled to a first turn of the second group of turns of the coil antenna, the third terminal disposed between the first and second terminals;
a fourth terminal coupled to a second turn of the second group of turns of the coil antenna, the fourth terminal disposed between the second and third terminals; and
a first electrically conductive connector connected to the third and fourth terminals, the first electrically conductive connector electrically shorting the first and second turns of the second group of turns, wherein the first electrically conductive connector is disposed between the first terminal and the second terminal and configured to form a buffer field between the first and second turns of the second group of turns separating a first plasma from a second plasma when power is applied to the coil antennae.

2. The plasma source of claim 1 , wherein the first pair of the first and second turns comprises two adjacent turns.

3. The plasma source of claim 1 , wherein one or more turns of the plurality of turns are located between the first and second turns.

4. The plasma source of claim 1 , wherein the dielectric tube comprises aluminum nitride, sapphire, or quartz.

5. The plasma source of claim 1 , wherein the coil antenna is hollow and further comprises a coolant inlet and a coolant outlet.

6. An abatement system comprising a power source and the plasma source of claim 1 .

7. A plasma source, comprising:
a dielectric tube;
a coil antenna surrounding the dielectric tube, wherein the coil antenna comprises a plurality of turns;
a first terminal connected to a first turn of the plurality of turns;
a second terminal connected to a second turn of the plurality of turns;
a first electrically conductive connector connected to the first terminal and the second terminal, wherein first electrically conductive connector is configured to form a buffer field separating a first plasma zone from a second plasma zone; and
a third terminal connected to a third turn of the plurality of turns;
a fourth terminal connected to a fourth turn of the plurality of turns; and
a second electrically conductive connector connected to the third terminal and the fourth terminal.

8. The plasma source of claim 7 , wherein the first turn of the plurality of turns is adjacent to the second turn of the plurality of turns.

9. The plasma source of claim 7 , wherein one or more turns of the plurality of turns are located between the first turn of the plurality of turns and the second turn of the plurality of turns.

10. The plasma source of claim 7 , wherein the dielectric tube comprises aluminum nitride, sapphire, or quartz.

11. The plasma source of claim 7 , wherein the second electrically conductive connector comprises copper, aluminum, or brass.

12. The plasma source of claim 7 , wherein the coil antenna is hollow and further comprises a coolant inlet and a coolant outlet.

13. An abatement system comprising a power source and the plasma source of claim 7 .

14. A plasma source, comprising:
a dielectric tube; and
a coil antenna surrounding the dielectric tube, wherein the coil antenna is configured to form two or more distinct plasma zones in the dielectric tube, wherein each of the two or more distinct plasma zones are separated by a respective buffer field formed by electrically shorting one or more turns of the coil antenna with an electrically conductive connector.

15. The plasma source of claim 14 , wherein the coil antenna comprises a plurality of turns.

16. The plasma source of claim 15 , wherein the plurality of turns comprises a first portion surrounding a first plasma zone of the two or more plasma zones and a second portion surrounding a second plasma zone of the two or more plasma zones.

17. The plasma source of claim 16 , wherein the plurality of turns further comprises a third portion located between the first portion and the second portion.

18. An abatement system comprising a power source and the plasma source of claim 14 .

Assignees

• Applied Materials Inc

Inventors

• Wang Rongping
• Zeng Jibing
• HOU David Muquing
• Cox Michael S
• Yuan Zheng
• L'Heureux James

Classifications

• H01J37/32348 Primary

  Dielectric barrier discharge · CPC title

• C23C16/4414

  Electrochemical vapour deposition [EVD] · CPC title

• H01J37/3211 Primary

  Antennas, e.g. particular shapes of coils · CPC title

• H05H1/4652

  using inductive coupling means, e.g. coils · CPC title

• H05H1/2465

  the plasma being activated by inductive coupling, e.g. using coiled electrodes · CPC title