High reliability RF switch based on phase-change material

Patent metadata

Field	Value
Publication number	US-10756268-B2
Application number	US-201916546211-A
Country	US
Kind code	B2
Filing date	Aug 20, 2019
Priority date	Aug 14, 2018
Publication date	Aug 25, 2020
Grant date	Aug 25, 2020

Abstract

A radio frequency (RF) switch includes a heating element, a nugget, a phase-change material (PCM), and input/output contacts. The nugget comprises thermally conductive and electrically insulating material, and is situated on top of the heating element. The PCM has an active segment approximately situated over the nugget, and passive segments approximately situated under the input/output contacts. The PCM RF switch may include thermally resistive material adjacent to first and second sides of the heating element, and/or adjacent to first and second sides of the nugget. The PCM RF switch may include a heat valve under the heating element.

First claim

The invention claimed is:

1. A radio frequency (RF) switch comprising:
a heating element;
a nugget comprising a thermally conductive and electrically insulating material situated over said heating element;
a heat spreader situated around said heating element and adjacent to said nugget;
a phase-change material having an active segment situated approximately over said nugget and passive segments situated approximately under input/output contacts of said RF switch.

2. The RF switch of claim 1 , wherein said phase-change material is selected from the group consisting of germanium telluride (Ge x Te y ), germanium antimony telluride (Ge x Sb y Te z ), germanium selenide (Ge x Se y ), and any other chalcogenide.

3. The RF switch of claim 1 , wherein said heat spreader comprises aluminum nitride (AIN).

4. The RF switch of claim 1 , wherein said nugget comprises aluminum nitride (AIN).

5. The RF switch of claim 1 , wherein said heating element comprises tungsten (W).

6. The RF switch of claim 1 , further comprising a segment of silicon nitride over said phase-change material.

7. A radio frequency (RF) switch comprising:
a heating element;
a nugget comprising a thermally conductive and electrically insulating material situated over said heating element;
a heat spreader situated around said heating element and adjacent to said nugget;
a phase-change material (PCM) having an active segment situated approximately over said nugget;
a silicon nitride segment situated over said PCM;
input/output contacts, said input/output contacts traversing through said silicon nitride segment and connecting with passive segments of said PCM.

8. The RF switch of claim 7 , further comprising a dielectric situated over said silicon nitride segment.

9. The RF switch of claim 7 , wherein said phase-change material is selected from the group consisting of germanium telluride (Ge x Te y ), germanium antimony telluride (Ge x Sb y Te z ), germanium selenide (Ge x Se y ), and any other chalcogenide.

10. The RF switch of claim 7 , wherein said heat spreader comprises aluminum nitride (AIN).

11. The RF switch of claim 7 , wherein said nugget comprises aluminum nitride (AIN).

12. The RF switch of claim 7 , wherein said heating element comprises tungsten (W).

13. A radio frequency (RF) switch comprising:
a heating element;
a nugget comprising a thermally conductive and electrically insulating material situated over said heating element,
a thermally resistive material situated around said heating element and adjacent to said nugget;
a heat spreader situated under said thermally resistive material;
a phase-change material (PCM) having an active segment situated approximately over said nugget;
said heating element transverse to said PCM said heating element approximately defining said active segment of said PCM and passive segments of said PCM;
input/output contacts connecting with said passive segments of said PCM.

14. The RF switch of claim 13 , where said thermally resistive material performs as a heat valve between said heating element and said heat spreader.

15. The RF switch of claim 13 , wherein said phase-change material is selected from the group consisting of germanium telluride (Ge x Te y ) germanium antimony telluride (Ge x Sb y Te z ), germanium selenide (Ge x Se y ), and any other chalcogenide.

16. The RF switch of claim 13 , wherein said heat spreader comprises aluminum nitride (AIN).

17. The RF switch of claim 13 , wherein said nugget comprises aluminum nitride (AIN).

18. The RF switch of claim 13 , wherein said heating element comprises tungsten (W).

19. The RF switch of claim 13 , further comprising a segment of silicon nitride over said phase-change material.

20. The RF switch of claim 13 , wherein said thermally resistive material comprises a material selected from the group consisting of SiO 2 and SiN.

Assignees

• Newport Fab Llc

Inventors

• Slovin Gregory P
• Howard David J
• Rose Jefferson E
• Debar Michael J
• El-Hinnawy Nabil

Classifications

• H10N70/8828

  Tellurides, e.g. GeSbTe · CPC title

• H10N70/231

  based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect · CPC title

• H10N70/8825

  Selenides, e.g. GeSe · CPC title

• H10N70/861

  Thermal details · CPC title

• H10N70/823 Primary

  adapted for essentially horizontal current flow, e.g. bridge type devices · CPC title