Semiconductor device

Patent metadata

Field	Value
Publication number	US-10748830-B2
Application number	US-201616098901-A
Country	US
Kind code	B2
Filing date	Sep 20, 2016
Priority date	Sep 20, 2016
Publication date	Aug 18, 2020
Grant date	Aug 18, 2020

Abstract

A wiring board ( 2 ) is provided on a heat radiation plate ( 1 ). A semiconductor chip ( 8 ) is provided on the wiring board ( 2 ). A case housing ( 10 ) is provided on the heat radiation plate ( 1 ) and surrounds the wiring board ( 2 ) and the semiconductor chip ( 8 ). Adhesive agent ( 11 ) bonds a lower surface of the case housing ( 10 ) and an upper surface peripheral portion of the heat radiation plate ( 1 ). A sealing material ( 13 ) is filled in the case housing ( 10 ) and covers the wiring board ( 2 ) and the semiconductor chip ( 8 ). A step portion ( 16,17 ) is provided to at least one of the lower surface of the case housing ( 10 ) and the upper surface peripheral portion of the heat radiation plate ( 1 ). A side surface of the heat radiation plate ( 1 ) and an outer side surface of the case housing ( 10 ) are flush with each other.

First claim

The invention claimed is:

1. A semiconductor device comprising:
a heat radiation plate;
a wiring board provided on the heat radiation plate;
a semiconductor chip provided on the wiring board;
a case housing provided on the heat radiation plate and surrounding the wiring board and the semiconductor chip;
adhesive agent bonding a lower surface of the case housing and an upper surface peripheral portion of the heat radiation plate; and
a sealing material filled in the case housing and covering the wiring board and the semiconductor chip,
wherein a step portion is provided to at least one of the lower surface of the case housing and the upper surface peripheral portion of the heat radiation plate, and
a side surface of the heat radiation plate and an outer side surface of the case housing are flush with each other.

2. The semiconductor device according to claim 1 , wherein as the step portion, a convex portion is provided at an outer portion of the lower surface of the case housing and a concave portion is provided at a position facing the convex portion at the upper surface peripheral portion of the heat radiation plate.

3. The semiconductor device according to claim 2 , wherein as the step portion, a groove is provided in the convex portion of the case housing and a protrusion is provided at a position facing the groove on the concave portion of the heat radiation plate.

4. The semiconductor device according to claim 1 , wherein as the step portion, a concave portion is provided on an outer portion of the lower surface of the case housing and a convex portion is provided at a position facing the concave portion on the upper surface peripheral portion of the heat radiation plate.

5. The semiconductor device according to claim 1 , wherein as the step portion, a convex portion is provided at a center portion of the lower surface of the case housing and a concave portion is provided at a position facing the convex portion on the upper surface peripheral portion of the heat radiation plate.

6. The semiconductor device according to claim 1 , wherein a convex portion is provided as the step portion on an outer portion of the lower surface of the case housing, and
a chamfer is provided at an inner portion of the lower surface of the case housing.

7. The semiconductor device according to claim 6 , wherein a concave portion is provided as the step portion at the upper surface peripheral portion of the heat radiation plate, and
an air space is provided on the lower surface of the case housing.

8. The semiconductor device according to claim 1 , wherein a convex portion is provided as the step portion at an inner portion of the lower surface of the case housing, and
a chamfer is provided at an outer portion of the lower surface of the case housing.

9. The semiconductor device according to claim 8 , wherein an air space is provided on the lower surface of the case housing.

10. The semiconductor device according to claim 1 , wherein the semiconductor chip is made of a wide-band-gap semiconductor.

Assignees

• Mitsubishi Electric Corp

Inventors

• Hayashida Yukimasa
• Oya Daisuke
• Matsumoto Takayuki
• Date Ryutaro

Classifications

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title

• H10W76/63

  characterised by their shape or disposition, e.g. between cap and walls of a container · CPC title

• H10W90/754

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W76/47

  Solid or gel fillings · CPC title

• H10W76/15

  Containers comprising an insulating or insulated base · CPC title