Compound, resin, and purification method thereof, material for forming underlayer film for lithography, composition for forming underlayer film, and underlayer film, as well as resist pattern forming method and circuit pattern forming method

Patent metadata

Field	Value
Publication number	US-10747112-B2
Application number	US-201615563263-A
Country	US
Kind code	B2
Filing date	Mar 17, 2016
Priority date	Mar 30, 2015
Publication date	Aug 18, 2020
Grant date	Aug 18, 2020

Abstract

The present invention provides a compound represented by following formula (1),

wherein R 1 represents a 2n-valent group having 1 to 30 carbon atoms, each of R 2 to R 5 independently represents a straight, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a halogen atom, a thiol group or a hydroxyl group, provided that at least one selected from R 1 to R 5 represents a group including an iodine atom and at least one R 4 and/or at least one R 5 represent/represents one or more selected from the group consisting of a hydroxyl group and a thiol group, each of m 2 and m 3 independently represents an integer of 0 to 8, each of m 4 and m 5 independently represents an integer of 0 to 9, provided that m 4 and m 5 do not represent 0 at the same time, n represents an integer of 1 to 4, and each of p 2 to p 5 independently represents an integer of 0 to 2.

First claim

The invention claimed is:

1. A compound represented by following formula (1),

wherein R 1 represents a 2n-valent group having 1 to 30 carbon atoms, each of R 2 to R 5 independently represents a straight, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a halogen atom, a thiol group or a hydroxyl group, provided that at least one selected from R 1 to R 5 represents a group including an iodine atom and at least one R 4 and/or at least one R 5 represent/represents one or more selected from the group consisting of a hydroxyl group and a thiol group, each of m 2 and m 3 independently represents an integer of 0 to 8, each of m 4 and m 5 independently represents an integer of 0 to 9, provided that m 4 and m 5 do not represent 0 at the same time, n represents an integer of 1 to 4, and each of p 2 to p 5 independently represents an integer of 0 to 2.

2. The compound according to claim 1 , wherein, in the formula (1), at least one R 2 and/or at least one R 3 represent/represents one or more selected from the group consisting of a hydroxyl group and a thiol group.

3. The compound according to claim 1 , wherein the compound represented by the formula (1) is a compound represented by following formula (1a),

wherein R 1 to R 5 and n are the same as defined in the formula (1), each of m 2′ and m 3′ independently represents an integer of 0 to 4, and each of m 4′ and m 5′ independently represents an integer of 0 to 5, provided that m 4′ and m 5′ do not represent 0 at the same time.

4. The compound according to claim 3 , wherein the compound represented by the formula (1a) is a compound represented by following formula (1b),

wherein R 1 is the same as defined in the formula (1), each of R 6 and R 7 independently represents a straight, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a halogen atom or a thiol group, provided that at least one selected from R 1 , R 6 and R 7 represents a group including an iodine atom, and each of m 6 and m 7 independently represents an integer of 0 to 7.

5. The compound according to claim 4 , wherein the compound represented by the formula (1b) is a compound represented by following formula (1c),

wherein each R 8 independently represents a hydrogen atom, a cyano group, a nitro group, a heterocyclic group, a halogen atom, a straight aliphatic hydrocarbon group having 1 to 20 carbon atoms, a branched aliphatic hydrocarbon group having 3 to 20 carbon atoms, a cyclic aliphatic hydrocarbon group having 3 to 20 carbon atoms, an aryl group having 6 to 20 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a thiol group or a hydroxyl group, provided that at least one R 8 represents a group including an iodine atom.

6. The compound according to claim 5 , wherein the compound represented by the formula (1c) is a compound represented by following formula (1d),

wherein each R 9 independently represents a cyano group, a nitro group, a heterocyclic group, a halogen atom, a straight aliphatic hydrocarbon group having 1 to 20 carbon atoms, a branched aliphatic hydrocarbon group having 3 to 20 carbon atoms, a cyclic aliphatic hydrocarbon group having 3 to 20 carbon atoms, an aryl group having 6 to 20 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a thiol group or a hydroxyl group, and m 9 represents an integer of 0 to 4.

7. A resin obtained with the compound according to claim 1 as a monomer.

8. The resin according to claim 7 , wherein the resin is obtained by reacting the compound with a compound having crosslinking reactivity.

9. The resin according to claim 8 , wherein the compound having crosslinking reactivity is an aldehyde, a ketone, a carboxylic acid, a carboxylic halide, a halogen-containing compound, an amino compound, an imino compound, an isocyanate or an unsaturated hydrocarbon group-containing compound.

10. A resin having a following structure represented by formula (2),

wherein R 1 represents a 2n-valent group having 1 to 30 carbon atoms, each of R 2 to R 5 independently represents a straight, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a halogen atom, a thiol group or a hydroxyl group, provided that at least one selected from R 1 to R 5 represents a group including an iodine atom and at least one R 4 and/or at least one R 5 represent/represents one or more selected from a hydroxyl group and a thiol group, L represents a straight or branched alkylene group having 1 to 20 carbon atoms, or a single bond, each of m 2 and m 3 independently represents an integer of 0 to 8, each of m 4 and m 5 independently represents an integer of 0 to 9, provided that m 4 and m 5 do not represent 0 at the same time, n represents an integer of 1 to 4, and each of p 2 to p 5 independently represents an integer of 0 to 2.

11. A material for forming an underlayer film for lithography, comprising the compound according to claim 1 .

12. A composition for forming an underlayer film for lithography, comprising the material for forming the underlayer film for lithography according to claim 11 , and a solvent.

13. The composition for forming the underlayer film for lithography according to claim 12 , further comprising an acid generator.

14. The composition for forming the underlayer film for lithography according to claim 12 , further comprising a crosslinking agent.

15. An underlayer film for lithography, wherein the underlayer film is formed from the composition for forming the underlayer film for lithography according to claim 12 .

16. A resist pattern forming method, comprising
a step of forming an underlayer film on a substrate by using the composition for forming the underlayer film according to claim 12 ,
a step of forming at least one photoresist layer on the underlayer film, and
a step of irradiating a predetermined region of the photoresist layer with radiation, and developing it.

17. A circuit pattern forming method, comprising
a step of forming an underlayer film on a substrate by using the composition for forming the underlayer film according to claim 12 ,
a step of forming an intermediate layer film on the underlayer film by using a silicon atom-containing resist intermediate layer film material,
a step of forming at least one photoresist layer on the intermediate layer film,
a step of irradiating a predetermined region of the photoresist layer with radiation, to form a developed resist pattern,
a step of etching the intermediate l

Assignees

• Mitsubishi Gas Chemical Co

Inventors

• Toida Takumi
• Echigo Masatoshi
• Makinoshima Takashi

Classifications

• H10P76/00

  Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography · CPC title

• G03F7/11 Primary

  having cover layers or intermediate layers, e.g. subbing layers {(G03F7/091 - G03F7/093, B41N3/03 take precedence)} · CPC title

• C07C37/72 Primary

  by liquid-liquid treatment · CPC title

• C08G8/20

  with polyhydric phenols · CPC title

• C07C39/15 Primary

  with all hydroxy groups on non-condensed rings {, e.g. phenylphenol} · CPC title