Etching method and substrate processing system

Patent metadata

Field	Value
Publication number	US-10734243-B2
Application number	US-201715841147-A
Country	US
Kind code	B2
Filing date	Dec 13, 2017
Priority date	Dec 13, 2016
Publication date	Aug 4, 2020
Grant date	Aug 4, 2020

Abstract

In an etching method for removing a processing target layer formed on a substrate for manufacturing electronic devices, a first break-through process of removing an oxide film formed on a surface of the processing target layer is performed, and a first main etching process of etching the processing target layer is performed after the first break-through process. Then, a second break-through process of removing the oxide film exposed after the first main etching process is performed, and a second main etching process of etching the processing target layer is performed after the second break-through process.

First claim

What is claimed is:

1. An etching method for removing a processing target layer formed on a substrate for manufacturing electronic devices, the method comprising:
a first break-through process of removing an oxide film formed on a surface of the processing target layer;
a first main etching process of etching the processing target layer after the first break-through process;
a second break-through process of removing an oxide film in a gap between grains of the processing target layer prior to the first main etching process, the oxide film exposed by the first main etching process; and
a second main etching process of etching the processing target layer after the second break-through process,
wherein an etching amount of the processing target layer in the first main etching process is smaller than an etching amount of the processing target layer in the second main etching process, and only a vicinity of a surface of the processing target layer is etched during the first main etching process.

2. The etching method of claim 1 , wherein in the first main etching process, an etching amount of the processing target layer is set to be 2000 A or above.

3. The etching method of claim 1 , further comprising:
a third break-through process of removing another oxide film in a gap between grains of the processing target layer prior to the second main etching process, exposed by the second main etching process; and
a third main etching process of etching the processing target layer after the third break-through process.

4. The etching method of claim 1 , wherein in the first break-through process and the second break-through process, HF gas and NH 3 gas are used as processing gases, and
wherein in the first main etching process and the second main etching process, at least F 2 gas is used as a processing gas.

5. The etching method of claim 1 , wherein the processing target layer is one of a silicon layer, a silicon nitride layer and a metal layer.

6. The etching method of claim 1 , wherein the first break-through process and the second break-through process are performed without using a plasma.

Assignees

• Tokyo Electron Ltd

Inventors

• Huang Tsuhung
• Lin Jun
• Orii Takehiko

Classifications

• H10P72/3304

  characterised by movements or sequence of movements of transfer devices · CPC title

• H10P72/3302

  Mechanical parts of transfer devices · CPC title

• H10P72/0464

  characterised by the construction of the transfer chamber · CPC title

• H10P72/0456

  in-line arrangement · CPC title

• H10P72/0421

  for drying etching · CPC title