Method of advanced contact hole pattering

Patent metadata

Field	Value
Publication number	US-10734229-B2
Application number	US-201916240310-A
Country	US
Kind code	B2
Filing date	Jan 4, 2019
Priority date	Jan 5, 2018
Publication date	Aug 4, 2020
Grant date	Aug 4, 2020

Abstract

Techniques herein include a method of forming etch masks to form contact holes and other features. Techniques herein use a reversal method to create contact hole patterns with improved critical dimension uniformity and contact edge roughness as compared to traditional direct print photolithography methods. A pillar is printed as an initial structure. The initial structure is reshaped to change smoothness, uniformity, and/or dimensions. A conformal film is deposited on the pillar. The conformal film can include a metal-containing material. A planarization process is executed that removes pillars down to the working surface of the substrate leaving the conformal film on the working surface of the substrate. This conformal film can then be used as an etch mask for additional pattern transfer.

First claim

The invention claimed is:

1. A method of forming a patterned mask having contact openings, the method comprising:
forming pillars on a working surface of a substrate, the pillars being part of a relief pattern of pillars, the pillars protruding from the working surface of the substrate;
executing a reshaping process that modifies a shape of the pillars;
depositing a first conformal film on the working surface of the substrate and on the pillars subsequent to executing the reshaping process, the first conformal film comprising hardmask material; and
executing a planarization process that mechanically removes the pillars down to a top surface of the first conformal film covering the working surface of the substrate leaving the first conformal film on the working surface of the substrate.

2. The method of claim 1 , wherein executing the reshaping process includes shrinking a width and height of the pillars.

3. The method of claim 1 , wherein executing the reshaping process includes reducing an edge roughness value of a surface of each pillar.

4. The method of claim 1 , wherein executing the reshaping process includes rounding a top surface of each pillar.

5. The method of claim 1 , wherein executing the reshaping process includes removing material from the pillars resulting in the pillars having a semi-spherical shape.

6. The method of claim 1 , wherein the first conformal film is deposited to result in a film thickness less than 15 nanometers.

7. The method of claim 6 , wherein the first conformal film is selected to have an etch resistivity relative to a material of the pillars and a given etchant of greater than 100 to 1.

8. The method of claim 1 , further comprising:
prior to depositing the first conformal film, conformally depositing a first interfacial film, wherein the first conformal film is deposited on the first interfacial film.

9. The method of claim 8 , wherein the first interfacial film is removable via isotropic etching.

10. The method of claim 1 , wherein the first conformal film covers uncovered surfaces of the pillars and the working surface of the substrate.

11. The method of claim 1 , wherein the hardmask material of the first conformal film is selected from the group consisting of hafnium oxide, boron nitride, silicon nitride, aluminum oxide, titanium oxide, and titanium nitride.

12. The method of claim 1 , wherein the hardmask material of the first conformal film is a metal-containing material.

13. The method of claim 1 , wherein executing the reshaping process includes reducing a surface roughness value of the pillars.

14. The method of claim 1 , wherein executing the reshaping process includes changing the pillars from a cylindrical shape to a bump shape.

15. The method of claim 1 , wherein executing the planarization process includes executing a chemical mechanical polishing step until reaching the top surface of the first conformal film leaving the first conformal film on the working surface of the substrate.

16. A method of forming a patterned mask having contact openings, the method comprising:
forming a relief pattern of pillar structures, on a working surface of a substrate, with pillar structures extending normal to the working surface of the substrate;
executing a reshaping process that modifies a shape of the pillar structures resulting in a reduced roughness value of the pillar structures as compared to an initial roughness value;
depositing a first conformal film on the substrate that conformally coats the pillar structures and the working surface, the first conformal film comprising a metal-containing material;
executing a planarization process that mechanically removes the pillar structures and the first conformal film covering the pillar structures down to the first conformal film covering the working surface of the substrate leaving the first conformal film on the working surface of the substrate; and
using remaining portions of the first conformal film as an etch mask to etch one or more underlying layers.

17. The method of claim 16 , wherein modifying the shape of the pillar structures includes shrinking a width of the pillar structures.

18. A method of forming a patterned mask having contact openings, the method comprising:
forming a relief pattern of pillar structures, on a working surface of a substrate, with pillar structures extending normal to the working surface of the substrate;
executing a reshaping process that modifies a shape of the pillar structures resulting in increased local critical dimension uniformity as compared to a critical dimension uniformity value prior to the reshaping process;
subsequent to executing the reshaping process, depositing a first interfacial film on the substrate that conformally coats the pillar structures and the working surface;
subsequent to depositing the first interfacial film, depositing a first conformal film on the substrate that conformally coats the pillar structures and the working surface, the first conformal film comprising a metal-containing material having a thickness less than 15 nanometers;
executing a planarization process that mechanically removes the pillar structures and the first conformal film covering the pillar structures down to the first conformal film covering the working surface of the substrate leaving the first conformal film on the working surface of the substrate; and
using remaining portions of the first conformal film as an etch mask to etch one or more underlying layers.

Assignees

• Tokyo Electron Ltd

Inventors

• Devilliers Anton J
• Lemley Corey

Classifications

• H10P95/062

  involving a dielectric removal step · CPC title

• H10P76/4085 Primary

  characterised by the processes involved to create the masks · CPC title

• H10P76/4088 Primary

  Processes for improving the resolution of the masks · CPC title

• H10W20/081

  by forming openings in the dielectric parts · CPC title

• H10W20/062 Primary

  by smoothing of conductive parts, e.g. by planarisation · CPC title