Preheat processes for millisecond anneal system

Patent metadata

Field	Value
Publication number	US-10727140-B2
Application number	US-201615377121-A
Country	US
Kind code	B2
Filing date	Dec 13, 2016
Priority date	Dec 30, 2015
Publication date	Jul 28, 2020
Grant date	Jul 28, 2020

Abstract

Preheat processes for a millisecond anneal system are provided. In one example implementation, a preheat process can include receiving a substrate on a wafer support plate in a processing chamber of a millisecond anneal system; obtaining one or more temperature measurements of the wafer support plate using a temperature sensor; and applying a preheat recipe to heat the wafer support plate based at least in part on the temperature of the wafer support plate. In one example implementation, a preheat process can include obtaining one or more temperature measurements from a temperature sensor having a field of view of a wafer support plate in a millisecond anneal system; and applying a pulsed preheat recipe to heat the wafer support plate in the millisecond anneal system based at least in part on the one or more temperature measurements.

First claim

What is claimed is:

1. A preheat process for an anneal system, comprising:
receiving a substrate on a wafer support plate in a processing chamber of the anneal system, the processing chamber divided into a top chamber and a bottom chamber;
obtaining one or more temperature measurements indicative of a temperature of the wafer support plate using a pyrometer, the pyrometer having a field of view of at least a portion of the wafer support plate; and
applying a preheat recipe to heat the wafer support plate based at least in part on the one or more temperature measurements indicative of the temperature of the wafer support plate;
wherein applying the preheat recipe to heat the wafer support plate based at least in part on the one or more temperature measurements indicative of the temperature of the wafer support plate comprises applying the preheat recipe to heat the wafer support plate until the temperature of the wafer support plate reaches a pre-set temperature;
wherein when the wafer support plate reaches the pre-set temperature, the process comprises:
stopping the preheat recipe;
applying a process recipe to a second substrate in the processing chamber, the process recipe being different from the preheat recipe.

2. The preheat process of claim 1 , wherein the wafer support plate comprises a quartz material.

3. The preheat process of claim 1 , wherein the substrate comprises a dummy semiconductor substrate.

4. The preheat process of claim 1 , wherein the preheat recipe specifies heating the wafer support plate and the substrate using one or more continuous mode lamps located proximate to the bottom processing chamber in the anneal system.

5. The preheat process of claim 4 , wherein the one or more continuous mode lamps are controlled based at least in part on the one or more temperature measurements of the wafer support plate.

6. The preheat process of claim 1 , wherein the pyrometer comprises a measurement temperature associated with wavelengths greater than about 4 μm.

7. The preheat process of claim 1 , wherein the pyrometer is located in the bottom chamber and has the field of view of the wafer support plate without obstruction by a water window of the anneal system.

8. The preheat process of claim 7 , wherein the field of view of the pyrometer is unobstructed by the substrate.

9. The preheat process of claim 1 , wherein the field of view of the pyrometer is directed to a center of the wafer support plate.

10. A preheat process for a thermal processing system, the process comprising:
receiving a substrate on a wafer support plate in a processing chamber of the thermal processing system;
obtaining one or more temperature measurements indicative of a temperature of the wafer support plate using a pyrometer, the pyrometer having a field of view of at least a portion of the wafer support plate; and
applying a preheat recipe to heat the wafer support plate based at least in part on the one or more temperature measurements indicative of the temperature of the water support plate;
wherein applying the preheat recipe to heat the wafer support plate based at least in part on the one or more temperature measurements indicative of the temperature of the wafer support plate comprises applying the preheat recipe to heat the wafer support plate until the temperature of the wafer support plate reaches a pre-set temperature;
wherein when the wafer support plate reaches the pre-set temperature, the process comprises:
stopping the preheat recipe;
applying a process recipe to a second substrate in the processing chamber, the process recipe being different from the preheat recipe.

11. The preheat process of claim 10 , wherein the wafer support plate comprises quartz.

12. The preheat process of claim 10 , wherein the pyrometer is located in the bottom chamber and has the field of view of the wafer support plate without obstruction by a water window of the anneal system.

13. The preheat process of claim 12 , wherein the field of view of the pyrometer is unobstructed by the substrate.

14. The preheat process of claim 10 , wherein the field of view of the pyrometer is directed to a center of the wafer support plate.

Assignees

• Mattson Tech Inc
• Beijing E Town Semiconductor Tech Co Ltd

Inventors

• Lieberer Markus
• Pfahler Christian
• Hagedorn Markus
• vanAbbema Michael
• Cosceev Alexandr

Classifications

• H10P95/90

  Thermal treatments, e.g. annealing or sintering · CPC title

• H10P72/7616

  characterised by a coating, a hardness or a material · CPC title

• H10P72/0602

  Temperature monitoring · CPC title

• H10P72/0462

  characterised by the construction of the processing chambers, e.g. modular processing chambers · CPC title

• H10P72/0436 Primary

  mainly by radiation · CPC title