Semiconductor device with multiple substrates electrically connected through an insulating film

Patent metadata

Field	Value
Publication number	US-10707258-B2
Application number	US-201815987278-A
Country	US
Kind code	B2
Filing date	May 23, 2018
Priority date	Mar 22, 2013
Publication date	Jul 7, 2020
Grant date	Jul 7, 2020

Abstract

A semiconductor device includes a first substrate having an attaching surface on which first electrodes and a first insulating film are exposed, an insulating thin film that covers the attaching surface of the first substrate, and a second substrate which has an attaching surface on which second electrodes and a second insulating film are exposed and is attached to the first substrate in a state in which the attaching surface of the second substrate and the attaching surface of the first substrate are attached together sandwiching the insulating thin film therebetween, and the first electrodes and the second electrodes deform and break a part of the insulating thin film so as to be directly electrically connected to each other.

First claim

What is claimed is:

1. An imaging device, comprising:
a first substrate, including:
a photodiode;
at least one of a transfer transistor or a reset transistor; and
a first electrode at a first surface side of the first substrate opposite to a light incident surface side;

a second substrate; including:
a second electrode at a first surface side of the second substrate; and
a plurality of transistors; and

an insulating thin film including first and second layers,
wherein the first substrate and the second substrate are bonded to each other such that the first surface side of the first substrate and the first surface side of the second substrate are facing each other,
wherein in a first connection region including the first electrode, the second electrode, and a non-conductive portion, the first electrode and the second electrode are bonded and electrically connected to each other, and the non-conductive portion is disposed at a bonding interface of the first electrode and the second electrode,
wherein the first substrate includes the first insulating thin film layer,
wherein the second substrate includes the second insulating thin film layer, and
wherein the second electrode overlaps the first electrode such than an area of the second insulating thin film layer covered by the second electrode is greater than an area of the first insulating thin film layer covered by the first electrode in a cross-sectional view.

2. The imaging device according to claim 1 , wherein the first insulating thin film layer and the second insulating thin film layer are bonded to each other.

3. The imaging device according to claim 1 , wherein the first substrate and the second substrate are bonded via the insulating thin film.

4. The imaging device according to claim 1 , wherein the non-conductive portion is a part of the insulating thin film.

5. The imaging device according to claim 1 , wherein the first substrate includes a first insulating film, wherein the first electrode includes a first electrode film and a barrier metal layer, and wherein the barrier metal layer is between the first electrode film and the first insulating film.

6. The imaging device according to claim 1 , wherein the first electrode includes copper.

7. The imaging device according to claim 6 , wherein the second electrode includes copper.

8. An imaging device, comprising:
a first substrate, including:
a photodiode;
at least one of a transfer transistor or a reset transistor, and
a first electrode at a first surface side of the first substrate opposite to a light incident surface side;

a second substrate, including:
a second electrode at a first surface side of the second substrate, and
a plurality of transistors;

wherein the first substrate and the second substrate are bonded to each other such that the first surface side of the first substrate and the first surface side of the second substrate are facing each other,
wherein a first connection region includes the first electrode and the second electrode,
wherein the first electrode and the second electrode are bonded and electrically connected to each other; and
wherein a bonding interface of the first electrode and the second electrode is has a jagged shape.

9. The imaging device according to claim 8 , further comprising: a non-conductive portion disposed at the bonding interface of the first electrode and the second electrode.

10. The imaging device according to claim 9 , wherein the non-conductive portion is an insulating thin film, wherein the insulating thin film includes first and second layers, wherein the first substrate includes the first insulating film layer, wherein the second substrate includes the second insulating film layer, and wherein the first insulating film layer and the second insulating film layer are bonded to each other.

11. The imaging device according to claim 8 , wherein the first substrate and the second substrate are bonded via an insulating film.

12. The imaging device according to claim 9 , wherein the non-conductive portion is a part of an insulating film.

13. The imaging device according to claim 8 , wherein the first substrate includes a first insulating film, wherein the first electrode includes a first electrode film and a barrier metal layer, and wherein the barrier metal layer is between the first electrode film and the first insulating film.

14. The imaging device according to claim 8 , wherein the first electrode includes copper.

15. The imaging device according to claim 14 , wherein the second electrode includes copper.

16. The imaging device according to claim 1 , wherein the first insulating thin film layer and the second insulating thin film layer are made of different materials.

17. The imaging device according to claim 10 , wherein the first insulating film layer and the second insulating film layer are made of different materials.

18. The imaging device according to claim 1 , wherein the insulating thin film is a nitride film or an oxide film.

19. The imaging device according to claim 10 , wherein the insulating thin film is a nitride film or an oxide film.

Assignees

• Sony Corp

Inventors

• Fujii Nobutoshi
• Hagimoto Yoshiya
• Aoyagi Kenichi
• Kagawa Yoshihisa

Classifications

• H10W72/953

  not comprising solid metals or solid metalloids, e.g. polymers, ceramics or liquids · CPC title

• H10W72/952

  comprising metals or metalloids, e.g. PbSn, Ag or Cu · CPC title

• H10W72/923

  Bond pads having multiple stacked layers · CPC title

• H10W80/312

  characterised by the direct bonding of electrically conductive pads · CPC title

• H10W80/327

  characterised by the direct bonding of insulating parts, e.g. of silicon oxide layers · CPC title