Semiconductor module with a supporting structure on the bottom side

Patent metadata

Field	Value
Publication number	US-10699984-B2
Application number	US-201716471472-A
Country	US
Kind code	B2
Filing date	Dec 15, 2017
Priority date	Dec 20, 2016
Publication date	Jun 30, 2020
Grant date	Jun 30, 2020

Abstract

A semiconductor module includes a substrate composed of electrically insulating material. A structured metal layer for contact with an electrical component is applied to a top side of the substrate. The structured metal layer is applied to the substrate only in a central region of the substrate, so that an edge region which surrounds the central region and in which the structured metal layer is not applied to the substrate remains on the top side of the substrate. A contact layer for making contact with a cooling body is situated opposite the structured metal layer and applied to a bottom side of the substrate in the central region. A structured supporting structure is further applied to the bottom side of the substrate in the edge region and has a thickness which corresponds to a thickness of the contact layer.

First claim

What is claimed is:

1. A semiconductor module comprising:
a substrate made from electrically insulating material;
a structured metal layer for making contact with an electrical component, said structured metal layer being applied to a too side of the substrate only in a central region of the substrate such that an edge region in surrounding relation to the central region is left on the top side of the substrate and in which the structured metal layer is not applied to the substrate;
a contact layer for contacting a cooling body, said contact layer being applied to a bottom side of the substrate in the central region in opposition to the structured metal layer; and
a structured supporting structure applied to the bottom side of the substrate in the edge region and having a thickness which corresponds to a thickness of the contact layer, wherein, with respect to any part region of the supporting structure, the supporting structure has an initial cross-section at an end facing the bottom side and a remaining cross-section at an end facing away from the bottom side, wherein a cross-section of the supporting structure decreases monotonously as a distance of the supporting structure increases from the bottom side until the cross-section is at a minimum.

2. The semiconductor module of claim 1 , wherein the supporting structure is separate from the contact layer.

3. The semiconductor module of claim 1 , wherein the supporting structure includes a plurality of structure elements and a bridging structure which is situated between the structure elements and has a thickness which is less than a thickness of the structure elements, or the supporting structure includes a plurality of structure elements which are completely separate from one another.

4. The semiconductor module of claim 3 , wherein the structure elements are each sized to extend only over part of a length and a width of the bottom side.

5. The semiconductor module of claim 4 , wherein the structure elements each form a plurality of rows lengthwise and widthwise on the bottom side.

6. The semiconductor module of claim 1 , wherein a decrease of the cross-section is at a maximum on the bottom side and is more gradual the greater the distance from the bottom side.

7. The semiconductor module of claim 1 , wherein, starting from the minimum cross-section, the cross-section increases again monotonously, the greater the distance from the bottom side.

8. The semiconductor module of claim 7 , wherein an increase of the cross section is at a minimum in a vicinity of the minimum cross-section and increases the greater the distance from the bottom side.

9. The semiconductor module of claim 3 , further comprising an auxiliary material introduced between the structure elements.

Assignees

• Siemens Ag

Inventors

• Neugebauer Stephan
• Pfefferlein Stefan
• Werner Ronny

Classifications

• H10W40/255

  having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates · CPC title

• H10W40/22 Primary

  characterised by their shape, e.g. having conical or cylindrical projections · CPC title

• H01L23/367 Primary

  Electricity · mapped topic

• H01L23/3735

  Electricity · mapped topic