Method for manufacturing cliché for offset printing, and cliché for offset printing

Patent metadata

Field	Value
Publication number	US-10696081-B2
Application number	US-201615536046-A
Country	US
Kind code	B2
Filing date	Aug 26, 2016
Priority date	Aug 26, 2015
Publication date	Jun 30, 2020
Grant date	Jun 30, 2020

Abstract

The present invention relates to a method for manufacturing a cliché for offset printing and a cliché for offset printing.

First claim

The invention claimed is:

1. A method for manufacturing a cliché for offset printing comprising the steps of:
forming a light shielding mask pattern on a substrate;
forming a negative photoresist layer on the substrate provided with the light shielding mask pattern;
exposing the negative photoresist layer by irradiating light to the substrate side;
forming a negative photoresist pattern layer having a protruding embossed portion and a developed groove pattern by developing the exposed negative photoresist layer; and
depositing ITO, SiO 2 or Al 2 O 3 with a thickness of 20 nm to 100 nm on the substrate formed with the negative photoresist pattern layer, after the developing step,
wherein the light shielding mask pattern is a metal pattern which is made of aluminum (Al),
wherein the light shielding mask pattern comprises an active pattern, a router pattern and a junction pattern, and a line width of the junction pattern is increased from the active attern to the router pattern,
wherein an average thickness of the negative photoresist layer is 3 μm or more,
the negative photoresist pattern layer has at least two groove patterns having different line widths, a difference in line width between at least two groove patterns is 10 μm or more, and
at least two groove patterns having a difference in line width of 10 μm or more are connected to each other.

2. A cliché for offset printing, comprising:
a substrate;
a negative photoresist pattern layer provided on the substrate and having an embossed portion and a groove pattern;
a metal oxide film on the substrate provided with the photoresist pattern layer, wherein the metal oxide film is ITO, SiO 2 or Al 2 O 3 ; and
a light shielding mask pattern provided on a bottom portion of the groove pattern,
wherein the light shielding mask pattern is a metal pattern which is made of aluminum (Al),
wherein the light shielding mask pattern comprises an active pattern, a router pattern and a junction pattern, and a line width of the junction pattern is increased from the active attern to the router pattern,
wherein an average thickness of the metal oxide film is from 20 nm to 100 nm, and
wherein an average depth of the groove pattern of the negative photoresist is 3 μm or more,
the negative photoresist pattern layer comprises at least two groove patterns having different line widths, an average depth of the groove pattern of the negative photoresist pattern layer is the same,
a difference in line width between at least two groove patterns is 10 μm or more, and at least two groove patterns having a difference in line width of 10 μm or more are connected to each other.

Assignees

• Lg Chemical Ltd

Inventors

• Son Yong Goo
• Lee Seung Heon

Classifications

• H10P95/00

  Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass · CPC title

• H10P76/40

  of masks comprising inorganic materials · CPC title

• H10P76/00

  Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography · CPC title

• H10P72/00

  Handling or holding of wafers, substrates or devices during manufacture or treatment thereof · CPC title

• H10W20/01

  Manufacture or treatment · CPC title