Protection circuits with negative gate swing capability

Patent metadata

Field	Value
Publication number	US-10693288-B2
Application number	US-201816019282-A
Country	US
Kind code	B2
Filing date	Jun 26, 2018
Priority date	Jun 26, 2018
Publication date	Jun 23, 2020
Grant date	Jun 23, 2020

Abstract

A protection circuit can include a first clamping sub-circuit, a first switching sub-circuit and a first resistive sub-circuit coupled in series between a first and second node. The protection circuit can also include a second clamping sub-circuit, a second switching sub-circuit and a second resistive sub-circuit coupled in series between the second and first nodes. The first and second clamping sub-circuits and the first and second resistive sub-circuits can be configured to bias a switching shunt sub-circuit. The switching shunt sub-circuit can be configured to short the first and second nodes together in response to a bias potential from the first and second clamping sub-circuits and the first and second resistive sub-circuits indicative of an over-voltage, Electrostatic Discharge (ESD) or similar event. The first and second switching sub-circuits can be configured to prevent the occurrence of a current path through the first and second resistive sub-circuits at the same time.

First claim

What is claimed is:

1. A circuit comprising;
a shunt coupled between a potential voltage, wherein the shunt includes a shunt transistor including a drain coupled to a first node, a source coupled to a second node and a gate coupled to a third node, and wherein the potential voltage is coupled between the first and second nodes;
a positive over potential detection circuit configured to control the shunt to short the potential voltage when the potential voltage is greater than a predetermined positive level, wherein the positive over potential detection circuit includes a first series of one or more clamping elements, a first switching transistor and a first resistive element coupled in series, wherein the first series of one or more clamping elements are coupled in series between the first node and the third node, wherein the first switching transistor includes a drain coupled to the third node and a gate coupled along the first series of one or more clamping elements not including the third node, and wherein the first resistive element is coupled between a source of the first switching transistor and the second node; and
a negative over potential detection circuit configured to control the shunt to short the potential voltage when the potential voltage is less than a predetermined negative level, wherein the negative over the potential detection circuit includes a second series of one or more clamping elements, a second switching transistor and a second resistive element coupled in series, wherein the second series of one or more clamping elements are coupled in series between the second node and the third node, wherein the second switching included a drain coupled to the third node and a gate coupled along the second series of one or more clamping elements not including the third node, and wherein the second resistive element is coupled between a source of the second switching transistor and first node.

2. The circuit of claim 1 , wherein:
the first series of one or more clamping elements comprises one or more diode-coupled transistors coupled in series between the first and third nodes; and
the second series of one or more clamping elements comprises one or more diode-coupled transistors coupled in series between the second and third nodes.

3. The circuit of claim 2 , wherein the first and second series of one or more diode-coupled transistors comprise first and second series of one or more diode-coupled High Electron Mobility Transistors (HEMTs).

4. The circuit of claim 3 , wherein the first and second series of one or more diode-coupled HEMTs comprise first and second series of one or more diode-coupled Gallium Nitride (GaN) based enhancement HEMTs.

5. The circuit of claim 1 , wherein the shunt transistor comprises a Gallium Nitride (GaN) based enhancement HEMT.

6. The circuit of claim 1 , wherein the first and second switching transistors comprise Gallium Nitride (GaN) based enhancement HEMTs.

7. The circuit of claim 1 , wherein:
the gate of the first switching transistor is coupled to the first node; and
the gate of the second switching transistor is coupled to the second node.

8. The circuit of claim 1 , wherein:
the gate of the first switching transistor is coupled between a first clamping element and a second clamping element of the first series of one or more clamping elements; and
the gate of the second switching transistor is coupled between a first clamping element and a second clamping element of the second series of one or more clamping elements.

9. A circuit comprising:
a switching shunt sub-circuit coupled between a first and second node, wherein the switching shunt sub-circuit is configured to short the first and second nodes together when a potential at a third node raises above a predetermined level;
a first clamping sub-circuit;
a first switching sub-circuit and a first resistive sub-circuit coupled in series, wherein the first switching sub-circuit is configured to couple the first resistive sub-circuit to the first clamping sub-circuit when a potential at the first node is above a potential of the second node, wherein the third node is biased at a first given potential drop below the potential on the first node by the first clamping sub-circuit when the potential at the first node is above the potential at the second node;
a second clamping sub-circuit; and
a second switching sub-circuit and a second resistive sub-circuit coupled in series, wherein the second switching sub-circuit is configured to couple the second resistive sub-circuit to the second clamping sub-circuit when the potential at the second node is above the potential of the first node, wherein the third node is biased at a second given potential drop below the potential on the second node by the second clamping sub-circuit when the potential at the second node is above the potential of the first node.

10. The circuit of claim 9 , wherein the switching shunt sub-circuit comprises a first High Electron Mobility Transistor (HEMT) including a drain coupled to the first node, a source coupled to the second node, and a gate coupled to the third node.

11. The circuit of claim 10 , wherein:
the first clamping sub-circuit comprises a first stack of a plurality of diode-coupled HEMTs; and
the second clamping sub-circuit comprises a second stack of a plurality of diode-coupled HEMTs.

12. The circuit of claim 11 , wherein:
the first switching sub-circuit comprises a first HEMT including a drain coupled to the third node, a source coupled to the first resistive sub-circuit, and a gate coupled to the first node or between diode-coupled HEMTs of the first stack; and
the second switching sub-circuit comprises a second HEMT including a drain coupled to the second node, a source coupled to the second resistive sub-circuit, and a gate coupled to the second node or between diode-coupled HEMTs of the second stack.

13. The circuit of claim 12 , wherein the predetermined level is substantially equal to a sum of threshold voltages of the first stack of diode-coupled HEMTs and the threshold of the first HEMT when the potential at the first node is above the second node, or a sum of threshold voltages of the second stack of diode-coupled HEMTs and the threshold of the second HEMT when the potential at the second node is above the first node.

14. A circuit comprising:
a component coupled between a first and second node;
a first transistor including a drain coupled to the first node, a source coupled to the second node and a gate coupled to a third node;
a first series of clamping elements coupled in series between the first node and the third node;
a second transistor including a drain coupled to the third node and a gate coupled along the first series of clamping elements not including the third node;
a first resistive element coupled between a source of the second transistor and the second node;
a second series of clamping elements coupled in series between the second node and the third node;
a third transistor including a drain coupled to the third node and a gate coupled along the second series of clamping elements not including the third node;
a second resistive element coupled between a source of the third transistor and the first node.

15. The circuit of claim 14 , wherein the component comprises a High Electron Mobility Transistor (HEMT).

16. The circuit of claim 15 , wherein the first and second series of clamping elements comprises first and second series of diode-coupled HEMTs.

17. The circuit of claim 16 , wherein the first, second and third transistors comprise HEMTs.

Assignees

• Vishay Siliconix
• Vishay Siliconix Llc

Inventors

• Shibib Muhammed Ayman
• Liao Chungchi Gina

Classifications

• H10W44/401

  Resistive arrangements (H10W44/20, H10W42/80 take precedence) · CPC title

• H10W42/80

  protecting against overcurrent or overload, e.g. fuses or shunts (integrated devices comprising arrangements for electrical protection H10D89/60) · CPC title

• H10W42/60

  protecting against electrostatic charges or discharges, e.g. Faraday shields (integrated devices comprising arrangements for electrical protection H10D89/60) · CPC title

• H10D89/811

  using FETs as protective elements · CPC title

• H10D30/47

  having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT] · CPC title