Sensor component with cap over trench and sensor elements

Patent metadata

Field	Value
Publication number	US-10693057-B2
Application number	US-201815950429-A
Country	US
Kind code	B2
Filing date	Apr 11, 2018
Priority date	May 4, 2016
Publication date	Jun 23, 2020
Grant date	Jun 23, 2020

Abstract

A component is provided comprising at least one substrate, at least one magnetic field sensor and at least one trench in the at least one substrate surrounds the at least one magnetic field sensor at least partially. At least one cap covers the at least one trench and the at least one magnetic field sensor, and at least one layer element arranged between the at least one cap and the at least one substrate.

First claim

What is claimed is:

1. A component comprising:
at least one substrate;
at least one magnetic field sensor;
at least one trench in the at least one substrate surrounding the at least one magnetic field sensor at least partially;
at least one cap covering the at least one trench and the at least one magnetic field sensor; and
two layer elements arranged between the at least one cap and the at least one substrate;
wherein the two layer elements and the at least one trench are arranged to form a cavity therebetween;
and wherein the two layer elements are selected from a group comprising a polyimide layer and a die attach film.

2. The component according to claim 1 , wherein the at least one trench surrounds substantially the at least one magnetic field sensor, in order to form an island, and further has a connecting bridge.

3. The component according to claim 2 , further comprising conductor paths, diffusions or bonding connections, which contact the electronic connections of the at least one magnetic field sensors and are guided over the connecting bridge.

4. The component according to claim 1 , wherein the at least one magnetic field sensor is integrated in the substrate.

5. The component according to claim 1 , wherein the at least one magnetic field sensor is a Hall sensor.

6. The component according to claim 1 , wherein the at least one magnetic field sensor has a depth which is at least 5 μm or one twentieth of the diagonal of the magnetic field sensor and the at least one trench has a depth which is at least 5 μm or one twentieth of the diagonal of the at least one magnetic field sensor.

7. The component according to claim 1 , wherein the at least one trench penetrates the at least one semiconductor substrate fully.

8. The component according to claim 1 , wherein the width of the at least one trench is less than 100 μm.

9. The component according to claim 1 , wherein the at least one trench is filled with a filling material such as a polymer or polyimide.

10. The component according to claim 1 , wherein the surface of the trench has an encapsulation layer.

11. The component according to claim 10 , wherein the encapsulation layer is a nitride.

12. The component according to claim 1 , wherein the trench is produced by laser removal.

13. The component according to claim 1 , wherein the at least one cap is a Hall sensor.

Assignees

• Tdk Micronas Gmbh

Inventors

• Baumann Marc
• Rubehn Thilo
• Joos Christian
• Stephan Jochen

Classifications

• H10W90/00

  Package configurations · CPC title

• H10N59/00

  Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00 (MRAM devices H10B61/00) · CPC title

• H10N52/80

  Constructional details · CPC title

• H10N52/101

  Semiconductor Hall-effect devices · CPC title

• H10B61/00

  Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices · CPC title