Semiconductor apparatus having a trench schottky barrier schottky diode

Patent metadata

Field	Value
Publication number	US-2016268449-A1
Application number	US-201615058675-A
Country	US
Kind code	A1
Filing date	Mar 2, 2016
Priority date	Mar 9, 2015
Publication date	Sep 15, 2016
Grant date	—

Abstract

A semiconductor apparatus having a trench Schottky barrier Schottky diode, which includes: a semiconductor volume of a first conductivity type, which semiconductor volume has a first side covered with a metal layer, and at least one trench extending in the first side and at least partly filled with metal. At least one wall segment of the trench, and/or at least one region, located next to the trench, of the first side covered with the metal layer, is separated by a layer, located between the metal layer and the semiconductor volume, made of a first semiconductor material of a second conductivity type.

First claim

What is claimed is:

1 . A semiconductor apparatus having a trench Schottky barrier Schottky diode, comprising:
a semiconductor volume of a first conductivity type, the semiconductor volume having a first side covered with a metal layer, and at least one trench extending in the first side and at least partly filled with metal, wherein at least one of: i) at least one wall segment of the trench, and ii) at least one region, located next to the trench, of the first side covered with the metal layer, has a layer, located between the metal layer and the semiconductor volume, made of a first semiconductor material of a second conductivity type.

2 . The semiconductor apparatus as recited in claim 1 , wherein the semiconductor volume has at least two trenches.

3 . The semiconductor apparatus as recited in claim 1 , wherein the first semiconductor material of the second conductivity type has a layer thickness of approximately 10 nm (nanometers) to approximately 500 nm.

4 . The semiconductor apparatus as recited in claim 1 , wherein a doping concentration of the first semiconductor material of the second conductivity type is approximately 10 16 atoms per cubic centimeter of volume to approximately 10 17 atoms per cubic centimeter of volume.

5 . The semiconductor apparatus as recited in claim 1 , wherein a region of a bottom of the at least one trench is filled with a second semiconductor material, the second semiconductor material being one of: i) a polycrystalline semiconductor material, or ii) a semiconductor material of the second conductivity type.

6 . The semiconductor apparatus as recited in claim 1 , wherein the trench at least partly filled with metal has at least two metal plies disposed above one another with respect to a depth of the trench, an upper one of the metal plies forming a segment of the metal layer with which the first side of the semiconductor volume of the first conductivity type is covered, and the metal plies encompass different metals.

7 . The semiconductor apparatus as recited in claim 1 , wherein the at least one trench is completely filled with at least one metal.

8 . The semiconductor apparatus as recited in claim 1 , wherein a second side of the semiconductor volume, which is located oppositely facing away from the first side covered with the metal layer, is covered with an electrically conductive contact material, and a partial volume, adjacent to the contact material, of the semiconductor volume being more highly doped than the remaining semiconductor volume.

9 . The semiconductor apparatus as recited in claim 1 , wherein the semiconductor apparatus is manufactured at least in part using at least one of an epitaxy method, an etching method, and an ion implantation method.

10 . The semiconductor apparatus as recited in claim 6 , wherein a height of a potential step or Schottky barrier of the upper metal ply, which corresponds to the metal layer, being lower than a height of a potential step or Schottky barrier of the metal ply disposed therebeneath.

11 . The semiconductor apparatus as recited in claim 1 , wherein a depth of the at least one trench being from 1 μm to 4 μm.

12 . The semiconductor apparatus as recited in claim 11 , werein the depth of the at least one trench is approximately 2 μm.

13 . The semiconductor apparatus as recited in claim 1 , wherein a ratio of a depth of the trench to a clearance between each two trenches being greater than or equal to approximately 2.

14 . The semiconductor apparatus as recited in claim 1 , wherein the first conductivity type corresponds to an n-doped semiconductor material and the second conductivity type corresponds to a p-doped semiconductor material.

15 . The semiconductor apparatus as recited in claim 1 , wherein the first conductivity type corresponds to a p-doped semiconductor material and the second conductivity type corresponds to an n-doped semiconductor material.

16 . The semiconductor apparatus as recited in claim 1 , wherein the semiconductor apparatus encompasses at least one of a silicon material, a silicon carbide material, a silicon-germanium material, and a gallium arsenide material.

Assignees

• Bosch Gmbh Robert

Inventors

• Qu Ning
• Goerlach Alfred

Classifications

• H10D62/85

  being Group III-V materials, e.g. GaAs · CPC title

• H10D64/64

  Electrodes comprising a Schottky barrier to a semiconductor · CPC title

• H10D62/8325

  Silicon carbide · CPC title

• H10D30/6738

  Schottky barrier electrodes · CPC title

• H10D30/675

  Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium · CPC title