Control of surface properties of printed three-dimensional structures

Patent metadata

Field	Value
Publication number	US-10688692-B2
Application number	US-201615763451-A
Country	US
Kind code	B2
Filing date	Nov 1, 2016
Priority date	Nov 22, 2015
Publication date	Jun 23, 2020
Grant date	Jun 23, 2020

Abstract

A method for fabrication includes providing a substrate having an upper surface with pattern of one or more recesses formed therein. A laser beam is directed to impinge on a donor film so as to eject droplets of a fluid from the donor film by laser-induced forward transfer (LIFT) into the one or more recesses. The fluid hardens within the one or more recesses to form a solid piece having a shape defined by the one or more recesses. The substrate is removed from the solid piece. In some embodiments, the recesses are coated with a thin-film layer before ejecting the droplets into the recesses, such that the thin-film layer remains as an outer surface of the solid piece after removing the substrate.

First claim

The invention claimed is:

1. A method for fabrication, comprising:
providing a substrate having an upper surface with pattern of one or more recesses formed therein;
directing a laser beam to impinge on a donor film so as to eject droplets of a fluid from the donor film by laser-induced forward transfer (LIFT) into the one or more recesses, wherein the fluid hardens within the one or more recesses to form a solid piece having a shape defined by the one or more recesses; and
removing the substrate from the solid piece,
wherein providing the substrate comprises coating the one or more recesses with a thin-film layer before ejecting the droplets into the one or more recesses, such that the thin-film layer remains as an outer surface of the solid piece after removing the substrate.

2. The method according to claim 1 , wherein the donor film comprises a metal film, such that the droplets of the fluid comprise molten metal.

3. The method according to claim 1 , wherein the donor film comprises a semiconductor material, such that the droplets of the fluid comprise the semiconductor material in a molten form.

4. The method according to claim 1 , wherein the donor film comprises a dielectric material, such that the droplets of the fluid comprise the dielectric material in a molten form.

5. The method according to claim 1 , wherein the donor film comprises a rheological material, such that the droplets of the fluid comprise the rheological material in a fluid form.

6. The method according to claim 1 , and comprising curing the fluid within the recesses.

7. The method according to claim 1 , and comprising, after forming the solid piece, applying energy in order to modify a material property of the solid piece.

8. The method according to claim 1 , wherein the one or more recesses have a dimension that is less than 1 mm.

9. The method according to claim 1 , wherein the substrate comprises a semiconductor wafer, and wherein providing the substrate comprises patterning and etching at least one surface layer on the semiconductor wafer in order to define the one or more recesses.

10. The method according to claim 1 , wherein removing the substrate comprises inducing a decomposition of the substrate.

11. The method according to claim 10 , wherein inducing the decomposition comprises selectively etching the substrate away from the solid piece.

12. The method according to claim 1 , wherein directing the laser beam comprises holding the donor film at a distance of at least 100 μm from the substrate while ejecting the droplets.

13. The method according to claim 1 , wherein directing the laser beam comprises ejecting first droplets of a first fluid and second droplets of a second fluid, having a composition different from the first fluid, into the one or more recesses from different, respective donor film areas.

14. A method for fabrication, comprising:
providing a substrate having an upper surface with pattern of one or more recesses formed therein;
coating the one or more recesses with a thin-film layer;
injecting droplets of a fluid into the one or more coated recesses, wherein the fluid hardens within the one or more coated recesses to form a solid piece having a shape defined by the one or more recesses; and
removing the substrate from the solid piece, while the thin-film layer remains as an outer surface of the solid piece after removing the substrate.

15. The method according to claim 14 , wherein the thin-film layer comprises a metal.

16. The method according to claim 14 , wherein the thin-film layer and the injected droplets comprise the same material.

17. The method according to claim 14 , wherein the thin-film layer and the droplets comprise different materials.

18. The method according to claim 14 , wherein the injected droplets comprise a metallic material.

19. The method according to claim 14 , wherein the injected droplets comprise a semiconductor material.

20. The method according to claim 14 , wherein the injected droplets comprise a dielectric material.

21. The method according to claim 14 , wherein the injected droplets comprise a rheological material.

22. The method according to claim 14 , and comprising curing the hardened fluid.

23. The method according to claim 14 , wherein the substrate comprises a semiconductor wafer, and wherein providing the substrate comprises patterning and etching at least one surface layer on the semiconductor wafer in order to define the one or more recesses.

24. The method according to claim 14 , wherein removing the substrate comprises selectively etching the substrate away from the solid piece.

25. The method according to claim 14 , wherein coating the one or more recesses comprises applying the thin-film layer to the substrate with a first adhesion that is weaker than a second adhesion between the hardened fluid and the thin-film layer, and wherein removing the substrate from the solid piece comprises pulling the solid piece, with the thin-film layer adhering thereto, out of the one or more recesses.

26. The method according to claim 14 , wherein the one or more recesses have a dimension that is less than 1 mm.

Assignees

• Orbotech Ltd

Inventors

• Zenou Michael
• Kotler Zvi

Classifications

• H10P50/00

  Etching of wafers, substrates or parts of devices · CPC title

• G03F7/0002 Primary

  Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping · CPC title

• B29C41/46

  Heating or cooling · CPC title

• B29C41/42

  Removing articles from moulds, cores or other substrates {(B29C33/444 and B29C37/0017 take precedence)} · CPC title

• B29C41/08 Primary

  Coating a former, core or other substrate by spraying or fluidisation, e.g. spraying powder {(spray-up of reinforcing fibres B29C70/305)} · CPC title