Radiation tolerant microstructured three dimensional semiconductor structure

Patent metadata

Field	Value
Publication number	US-10685758-B2
Application number	US-201715494219-A
Country	US
Kind code	B2
Filing date	Apr 21, 2017
Priority date	Mar 15, 2013
Publication date	Jun 16, 2020
Grant date	Jun 16, 2020

Abstract

According to one embodiment, a product includes an array of three dimensional structures, a cavity region between each of the three dimensional structures, and a first material in contact with at least one surface of each of the three dimensional structures. In addition, each of the three dimensional structures includes a semiconductor material, where at least one dimension of each of the three dimensional structures is in a range of about 0.5 microns to about 10 microns. Moreover, the first material is configured to provide high energy particle and/or ray emissions.

First claim

What is claimed is:

1. A product, comprising:
an array of three dimensional structures, wherein each of the three dimensional structures comprises a semiconductor material, wherein at least one dimension of each of the three dimensional structures is in a range of about 0.5 microns to about 10 microns;
a cavity region between each of the three dimensional structures; and
a first material in contact with at least one surface of each of the three dimensional structures, wherein the first material comprises a radioisotope configured to provide alpha particle emissions,
wherein the at least one dimension enables mitigation of radiation-induced damage at a rate that is at least 90% of a rate of the radiation-induced damage from the alpha particle emissions from the first material.

2. The product of claim 1 , wherein the semiconductor material includes a material selected from the group consisting of: silicon, silicon carbide, gallium arsenide, indium phosphide, icosahedral boride, and gallium nitride.

3. The product of claim 1 , wherein the first material comprises the radioisotope selected from the group consisting of: 148 Gd, 238 Pu, 244 Cm, 243 Am, 241 Am, and 232 U.

4. The product of claim 1 , further comprising a second material configured to provide high energy particle and/or ray emissions, wherein the second material is positioned above at least one portion of the first material, wherein the second material is different than the first material.

5. The product of claim 4 , further comprising one or more additional materials positioned above at least one portion of the second material, wherein each of the one or more additional materials are configured to provide high energy particle and/or ray emissions.

6. The product of claim 1 , wherein the three dimensional structures are pillars, wherein the first material has a thickness in a range of about 50 microns to about 500 microns.

7. A product, comprising:
an array of three dimensional structures, wherein each of the three dimensional structures comprises a semiconductor material; a cavity region between each of the three dimensional structures; and a first material in contact with at least one surface of each of the three dimensional structures, wherein the first material is a radioisotope configured to provide alpha particle emissions, wherein each of the three dimensional structures has at least one dimension that enables mitigation of radiation-induced damage at a rate that is at least 90% of a rate of the radiation-induced damage from the alpha particle emissions from the first material.

8. The product of claim 7 , wherein the semiconductor material includes a material selected from the group consisting of: silicon, silicon carbide, gallium arsenide, indium phosphide, icosahedral boride, and gallium nitride.

9. The product of claim 7 , wherein the first material comprises a radioisotope selected from the group consisting of: 148 Gd, 238 Pu, 244 Cm, 243 Am, 241 Am, 63 Ni, 106 Ru, 232 U, 0.90 Sr, 0.147 Pm, and a tritiated material.

10. The product of claim 7 , further comprising a second material configured to provide high energy particle and/or ray emissions, wherein the second material is positioned above at least one portion of the first material, wherein the second material is different than the first material.

11. The product of claim 10 , further comprising one or more additional materials positioned above at least one portion of the second material, wherein each of the one or more additional materials are configured to provide high energy particle and/or ray emissions.

12. The product of claim 7 , wherein the three dimensional structures are pillars, wherein the first material provides alpha particle emissions.

13. The product of claim 7 , wherein the first material is configured to form a layer above at least one surface of each of the three dimensional structures.

14. The product of claim 7 , wherein the first material has a thickness in a range of about 50 microns to about 500 microns.

15. The product of claim 7 , wherein at least one dimension of each of the three dimensional structures is in a range of about 0.01 microns to less than about 0.5 microns.

16. A product, comprising:
an array of three dimensional structures, wherein each of the three dimensional structures comprises a semiconductor material;
a cavity region between each of the three dimensional structures; and
a first material, wherein the first material comprises a radioisotope positioned to provide alpha particle emissions to the three dimensional structures,
wherein each of the three dimensional structures has at least one dimension that enables migration of radiation-induced damage to a surface of the respective three dimensional structure at a rate that is at least 90% of a rate of the radiation-induced damage from the alpha particle emissions from the first material.

17. The product of claim 16 , wherein the semiconductor material includes a material selected from the group consisting of: silicon, silicon carbide, gallium arsenide, indium phosphide, icosahedral boride, and gallium nitride.

18. The product of claim 16 , wherein the at least one dimension is in a range of about 0.01 microns to less than 0.9 micron.

19. The product of claim 16 , wherein the at least one dimension enables mitigation of radiation-induced damage at a rate that is at least 90% of a rate of the radiation-induced damage from the alpha particle emissions from the first material.

20. The product of claim 19 , wherein the first material is in contact with at least one surface of each of the three dimensional structures.

21. The product of claim 20 , further comprising a second material configured to provide high energy particle and/or ray emissions, wherein the second material is positioned above at least one portion of the first material relative to the first material.

22. The product of claim 21 , further comprising one or more additional materials positioned above at least one portion of the second material, wherein each of the one or more additional materials are configured to provide high energy particle and/or ray emissions.

23. The product of claim 16 , wherein the three dimensional structures are pillars.

24. A method for forming the product as recited in claim 16 , the method comprising:
identifying a first material for providing high energy particle and/or ray emissions to the three dimensional structures, wherein the first material is deposited on a surface of each of the three dimensional structures; and
forming the array of three dimensional structures to have the at least one dimension that enables mitigation of radiation-induced damage at a rate that is at least 90% of a rate of the radiation-induced damage from the high energy particle and/or ray emissions from the first material.

Assignees

• L Livermore Nat Security Llc

Inventors

• Frye Clint
• Henderson Roger A
• Murphy John Winter
• Nikolic Rebecca J
• Qu Dongxia
• Shao Qinghui
• Stoyer Mark A
• Voss Lars

Classifications

• G21H1/06 Primary

  Cells wherein radiation is applied to the junction of different semiconductor materials · CPC title

• G21H1/00

  Arrangements for obtaining electrical energy from radioactive sources, e.g. from radioactive isotopes {, nuclear or atomic batteries} · CPC title

• G21H1/04

  Cells using secondary emission induced by alpha radiation, beta radiation, or gamma radiation · CPC title