High energy-density radioisotope micro power sources

Patent metadata

Field	Value
Publication number	US-10083770-B2
Application number	US-201414182908-A
Country	US
Kind code	B2
Filing date	Feb 18, 2014
Priority date	Mar 12, 2009
Publication date	Sep 25, 2018
Grant date	Sep 25, 2018

Abstract

A solid-state high energy-density micro radioisotope power source device including a dielectric and radiation shielding body having an internal cavity, a first electrode disposed a first end of the cavity, and a second electrode disposed at an opposing second end of the cavity and spaced apart from the first electrode such that a micro chamber is provided therebetween. The device further includes a solid-state composite voltaic semiconductor disposed within the micro chamber fabricated by combining at least one semiconductor material with at least one radioisotope material to provide a pre-voltaic semiconductor composition; depositing the pre-voltaic semiconductor composition into the micro chamber; heating the body to liquefy the pre-voltaic semiconductor composition within the micro chamber such that the semiconductor and radioisotope materials are uniformly mixed; and cooling the body and liquid state composite mixture such that liquid state composite mixture solidifies to provide the solid-state composite voltaic semiconductor.

First claim

What is claimed is:

1. A solid-state high energy-density micro radioisotope power source device; said device comprising:
a dielectric and radiation shielding body having an internal cavity formed therein;
an ohmic contact layer comprising a conductive material disposed at a first end of the cavity, and a rectifying contact layer comprising a conductive material disposed at an opposing second end of the cavity and spaced apart from the ohmic contact layer such that a micro chamber is provided therebetween;
a solid-state composite voltaic semiconductor disposed within the micro chamber between and in contact with the ohmic contact layer and the rectifying layer, the solid-state composite voltaic semiconductor comprising at least one non-radioactive semiconductor material uniformly mixed with at least one radioisotope material; and
a rectifying junction formed between the rectifying contact layer and the solid-state composite voltaic semiconductor, the rectifying junction having a depletion region within the solid-state composite voltaic semiconductor that directly converts the energy of the radioisotope material uniformly mixed with the at least one non-radioactive semiconductor material to an electric field generated within the depletion region, wherein the conductive material of one of the ohmic contact layer and the rectifying layer has a high work function compared to the composite voltaic semiconductor, and the conductive material of the opposing one of the contact layer and the rectifying layer comprises a metal having a low work function compared to the composite voltaic semiconductor.

2. The device of claim 1 , wherein the pre-voltaic semiconductor composition further comprises at least one dopant combined with the at least one semiconductor material with the at least one radioisotope material.

3. The device of claim 1 , wherein the body having the internal cavity formed therein comprises a top portion and a bottom portion forming a ‘leak-proof’ seal between the top and bottom body portions, thereby encapsulating the solid-state composite voltaic semiconductor within the internal cavity to reduce radiation losses and increase electron hole pairing within the depletion region.

4. The device of claim 1 , wherein at least one of the ohmic contact layer and the rectifying layer includes a plurality of nanostructures formed on an interface surface of the respective contact layer to increase a surface per volume ratio of the solid-state composite voltaic semiconductor to the respective contact layer, resulting in higher conversion efficiency of the solid-state high energy-density micro radioisotope power source device.

5. The device of claim 1 , wherein:
the ohmic contact layer is structured to include comb-like fingers extending from a base of the ohmic contact layer; and
the rectifying layer is structured to include comb-like fingers extending from a base of the rectifying layer such that the ohmic contact layer comb-like fingers are interposed with the rectifying layer comb-like fingers and a gap is provided between the interposed ohmic contact layer and rectifying layer comb-like fingers in which the solid-state composite voltaic semiconductor is disposed such that a surface per volume ratio of the solid-state composite voltaic semiconductor to the contact layer and rectifying layer is increased, resulting in higher conversion efficiency of the solid-state high energy-density micro radioisotope power source device.

6. The device of claim 1 , wherein the solid-state high energy-density micro radioisotope power source device is structured and operable to provide electrical voltage at least at temperatures between 0° C. and 250° C.

7. A solid-state high energy-density micro radioisotope power source device; said device comprising:
a dielectric and radiation shielding body having an internal cavity formed therein;
an ohmic contact layer comprising a conductive material disposed at a first end of the cavity, and a rectifying contact layer comprising a conductive material disposed at an opposing second end of the cavity and spaced apart from the ohmic contact layer such that a micro chamber is provided therebetween;
a solid-state composite voltaic semiconductor disposed within the micro chamber between and in contact with the ohmic contact layer and the rectifying layer, the solid-state composite voltaic semiconductor comprising at least one non-radioactive semiconductor material uniformly mixed with at least one radioisotope material; and
a rectifying junction formed between the rectifying contact layer and the solid-state composite voltaic semiconductor, the rectifying junction having a depletion region within the solid-state composite voltaic semiconductor that converts the energy of the radioisotope material uniformly mixed with the at least one non-radioactive semiconductor material to an electric field generated within the depletion region.

Assignees

• Kwon Jae Wan
• Wacharasindhu Tongtawee
• Robertson John David
• Univ Missouri

Inventors

• Kwon Jae Wan
• Wacharasindhu Tongtawee
• Robertson John David

Classifications

• G21H1/00 Primary

  Arrangements for obtaining electrical energy from radioactive sources, e.g. from radioactive isotopes {, nuclear or atomic batteries} · CPC title

• G21H1/06 Primary

  Cells wherein radiation is applied to the junction of different semiconductor materials · CPC title