I-layer vanadium-doped PIN type nuclear battery and the preparation process thereof

Patent metadata

Field	Value
Publication number	US-9728292-B2
Application number	US-201214349933-A
Country	US
Kind code	B2
Filing date	May 31, 2012
Priority date	Oct 19, 2011
Publication date	Aug 8, 2017
Grant date	Aug 8, 2017

Abstract

A layer I vanadium-doped PIN-type nuclear battery, including from top to bottom a radioisotope source layer( 1 ), a p-type ohm contact electrode( 4 ), a SiO 2 passivation layer( 2 ), a SiO 2 compact insulation layer( 3 ), a p-type SiC epitaxial layer( 5 ), an n-type SiC epitaxial layer( 6 ), an n-type SiC substrate( 7 ) and an n-type ohm contact electrode( 8 ). The doping density of the p-type SiC epitaxial layer( 5 ) is 1×10 19 to 5×10 19 cm −3 , the doping density of the n-type SiC substrate( 7 ) is 1×10 18 to 7×10 18 cm −3 . The n-type SiC epitaxial layer( 6 ) is a low-doped layer I formed by injecting vanadium ions, with the doping density thereof being 1×10 13 to 5×10 14 cm −3 . Also provided is a preparation method for a layer I vanadium-doped PIN-type nuclear battery. The present invention solves the problem that the doping density of layer I of the exiting SiC PIN-type nuclear battery is high.

First claim

What is claimed is:

1. An I-layer vanadium-doped PIN type nuclear battery, which from top to bottom, comprises:
a radioactive isotope source layer ( 1 );
a p-type ohmic contact electrode ( 4 ), a SiO 2 passivation layer ( 2 );
a SiO 2 dense insulation layer ( 3 );
a p-type SiC epitaxial layer ( 5 );
an n-type SiC epitaxial layer ( 6 ), an n-type SiC substrate ( 7 ); and
an n-type ohmic contact electrode ( 8 ), said radioactive isotope source layer ( 1 ) and said p-type ohmic contact electrode ( 4 ) are provided on the top surface of said p-type SiC epitaxial layer ( 5 ), said SiO 2 dense insulation layer ( 3 ) extended to the top surface of n-type SiC epitaxial layer ( 6 ) from the top surface of said p-type SiC epitaxial layer ( 5 ) via lateral bench portion, said SiO 2 passivation layer ( 2 ) is laminated on said SiO 2 dense insulation layer ( 3 ), characterized in that said p-type SiC epitaxial layer ( 5 ) has a doping concentration of 1×10 19 ˜5×10 19 cm −3 , said n-type SiC substrate ( 7 ) has a doping concentration of 1×10 18 ˜7×10 18 cm −3 , said n-type SiC epitaxial layer ( 6 ) is a low doping I layer formed by injecting vanadium ions, and has a doping concentration of 1×10 13 ˜5×10 14 cm −3 .

2. The I-layer vanadium-doped PIN type nuclear battery according to claim 1 , characterized in that injecting energy of said vanadium ions is from 2000 KeV to 2500 KeV, and injecting amount is from 5×10 13 ˜1×10 15 cm −2 .

3. The I-layer vanadium-doped PIN type nuclear battery according to claim 1 characterized in that said n-type SiC epitaxial layer ( 6 ) has a thickness of 3 μm-5 μm.

4. The I-layer vanadium-doped PIN type nuclear battery according to claim 1 , characterized in that said p-type SiC epitaxial layer ( 5 ) has a thickness of 0.2 μm-0.5 μm.

5. The I-layer vanadium-doped PIN type nuclear battery according to claim 1 , characterized in that said SiO 2 dense insulation layer ( 3 ) has a thickness of 10 nm-20 nm.

6. The I-layer vanadium-doped PIN type nuclear battery according to claim 1 , characterized in that said SiO 2 passivation layer ( 2 ) has a thickness of 0.3 μm-0.5 μm.

Assignees

• Guo Hui
• Zhang Keji
• Zhang Yuming
• Zhang Yujuan
• Han Chao
• Shi Yanqiang
• Univ Xidian

Inventors

• Guo Hui
• Zhang Keji
• Zhang Yuming
• Zhang Yujuan
• Han Chao
• Shi Yanqiang

Classifications

• H10P14/3444

  P-type · CPC title

• H10P14/3408

  Silicon carbide · CPC title

• H10P14/2904

  Silicon carbide · CPC title

• H10P14/24

  using chemical vapour deposition [CVD] · CPC title

• H10P30/2042

  into crystalline silicon carbide · CPC title