Metrology using overlay and yield critical patterns

US10685165B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10685165-B2
Application numberUS-201615082152-A
CountryUS
Kind codeB2
Filing dateMar 28, 2016
Priority dateJul 13, 2014
Publication dateJun 16, 2020
Grant dateJun 16, 2020

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

Metrology methods are provided, which comprise identifying overlay critical patterns in a device design, the overlay critical patterns having an overlay sensitivity to process variation above a specified threshold that depends on design specifications; and using metrology targets that correspond to the identified overlay critical patterns. Alternatively or complementarily, metrology methods comprise identifying yield critical patterns according to a corresponding process window narrowing due to specified process variation, wherein the narrowing is defined by a dependency of edge placement errors (EPEs) of the patterns on process parameters. Corresponding targets and measurements are provided.

First claim

Opening claim text (preview).

What is claimed is: 1. A computer implementable method of designing a circuit device, the method executable on a computer including a central processing unit (CPU) capable of executing computer readable instructions stored on a non-transitory computer readable storage medium, which instructions, when read by the CPU, cause the CPU to perform operations comprising: on a metrology target of a simulated circuit device, identifying at least one simulated circuit device pattern having an increased potential of producing a higher incidence of unacceptable devices as compared to one or more simulated circuit patterns identified as producing acceptable devices based on at least one specified process variation, which at least one specified process variation narrows a range of acceptable production deviations, wherein the narrowing of the range of acceptable production deviations is based on an edge placement error of the simulated circuit device pattern and at least one process parameter. 2. The computer implementable method of claim 1 , wherein the CPU performs operations further comprising estimating the range of acceptable production deviations due to an effect of the at least one specified process variation/inaccuracy (PV) on the at least one simulated circuit device pattern that has the increased potential of producing the higher incidence of unacceptable devices. 3. The computer implementable method of claim 1 , wherein the CPU performs operations further comprising modifying the at least one process parameter to modify the range of acceptable production deviations. 4. The computer implementable method of claim 1 , wherein the CPU performs operations further comprising associating the identified at least one simulated circuit device pattern that has the increased potential of producing the higher incidence of unacceptable devices according to its effect on the range of acceptable production deviations. 5. The computer implementable method of claim 4 , wherein the CPU performs operations further comprising correcting for the range of acceptable production deviations, commonly for an associated at least one simulated circuit device pattern that has the increased potential of producing the higher incidence of unacceptable devices. 6. The computer implementable method of claim 5 , wherein the CPU performs operations further comprising splitting a cut mask to associate production of the associated at least one simulated circuit device pattern that has the increased potential of producing the higher incidence of unacceptable devices.

Assignees

Inventors

Classifications

  • Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects · CPC title

  • H10P74/27Primary

    Structural arrangements therefor · CPC title

  • Reducing waste in manufacturing processes; Calculations of released waste quantities · CPC title

  • Manufacturability analysis or optimisation for manufacturability · CPC title

  • G06F30/398Primary

    Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM] (optical proximity correction [OPC] design processes G03F1/36) · CPC title

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What does patent US10685165B2 cover?
Metrology methods are provided, which comprise identifying overlay critical patterns in a device design, the overlay critical patterns having an overlay sensitivity to process variation above a specified threshold that depends on design specifications; and using metrology targets that correspond to the identified overlay critical patterns. Alternatively or complementarily, metrology methods com…
Who is the assignee on this patent?
Kla Tencor Corp
What technology area does this patent fall under?
Primary CPC classification H10P74/27. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jun 16 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).