Electro-optic modulators with layered arrangements

Patent metadata

Field	Value
Publication number	US-10684530-B1
Application number	US-201916288634-A
Country	US
Kind code	B1
Filing date	Feb 28, 2019
Priority date	Feb 28, 2019
Publication date	Jun 16, 2020
Grant date	Jun 16, 2020

Abstract

Structures for an electro-optic modulator and methods of fabricating a structure for an electro-optic modulator. An electro-optic modulator is arranged over a portion of a waveguide core. The electro-optic modulator includes an electrode, an active layer arranged adjacent to the electrode, and a dielectric layer including a portion that has a lateral arrangement between the electrode and the active layer. The active layer is composed of a material having a refractive index that is a function of a bias voltage applied to the electrode and the active layer.

First claim

What is claimed is:

1. A structure comprising:
a waveguide core; and
an electro-optic modulator arranged over a portion of the waveguide core, the electro-optic modulator including a first electrode, a second electrode, an active layer, and a dielectric layer including a first portion and a second portion, the first electrode including a first sidewall, and the second electrode including a second sidewall spaced from the first sidewall of the first electrode by a slot,
wherein the active layer includes a first portion positioned in the slot, the first portion of the dielectric layer is arranged in the slot between the first portion of the active layer and the first sidewall of the first electrode, the second portion of the dielectric layer is arranged in the slot between the first portion of the active layer and the second sidewall of the second electrode, and the active layer is comprised of a material having a refractive index that is a function of a bias voltage applied to the first electrode and the second electrode.

2. The structure of claim 1 wherein the material of the active layer is indium-tin oxide.

3. The structure of claim 1 wherein the portion of the waveguide core is a straight section having a longitudinal axis, and the electro-optic modulator is fully arranged along the longitudinal axis to overlap with the straight section of the waveguide core.

4. The structure of claim 3 wherein the waveguide core includes a first taper and a second taper, and the straight section is arranged along the longitudinal axis between the first taper and the second taper.

5. The structure of claim 1 further comprising:
a back-end-of-line stack arranged over the electro-optic modulator, the back-end-of-line stack including a first via connected with the first electrode and a second via connected with the active layer.

6. The structure of claim 5 the back-end-of-line stack includes a third via connected with the second electrode.

7. The structure of claim 1 wherein the first portion of the dielectric layer has a first thickness, the second portion of the dielectric layer has a second thickness, and the first thickness is substantially equal to the second thickness.

8. The structure of claim 7 wherein the first portion of the active layer has a first thickness over the first portion of the dielectric layer on the first sidewall of the first electrode, the first portion of the active layer has a second thickness over the second portion of the dielectric layer on the second sidewall of the second electrode, and the first thickness is substantially equal to the second thickness.

9. The structure of claim 1 further comprising:
a back-end-of-line stack including an interlayer dielectric layer arranged between the electro-optic modulator and the waveguide core.

10. The structure of claim 1 wherein the first electrode and the second electrode have substantially equal thicknesses.

11. The structure of claim 1 wherein the active layer includes a second portion arranged over the first electrode, and further comprising:
a back-end-of-line stack arranged over the electro-optic modulator, the back-end-of-line stack including a first via connected with the first electrode and a second via connected with the second portion of the active layer.

12. The structure of claim 11 wherein the dielectric layer includes a third portion arranged between a top surface of the first electrode and the second portion of the active layer.

13. A method comprising:
forming a waveguide core; and
forming an electro-optic modulator that is arranged over a portion of the waveguide core,
wherein the electro-optic modulator includes a first electrode, a second electrode, an active layer arranged adjacent to the first electrode, and a dielectric layer including a first portion and a second portion, the first electrode includes a first sidewall, the second electrode includes a second sidewall spaced from the first sidewall of the first electrode by a slot, the first portion of the dielectric layer is arranged in the slot between the active layer and the first sidewall of the first electrode, the second portion of the dielectric layer is arranged in the slot between the active layer and the second sidewall of the second electrode, and the active layer is comprised of a material having a refractive index that is a function of a bias voltage applied to the first electrode and the active layer.

14. The method of claim 13 wherein forming the electro-optic modulator that is arranged over the portion of the waveguide core comprises:
patterning a conductor layer to form the first electrode and the second electrode; and
conformally depositing the active layer within the slot on the first sidewall of the first electrode and on the second sidewall of the second electrode.

15. The method of claim 14 wherein forming the electro-optic modulator that is arranged over the portion of the waveguide core further comprises:
conformally depositing the first portion of the dielectric layer within the slot on the first sidewall of the first electrode and the second portion of the dielectric layer within the slot on the second sidewall of the second electrode,
wherein the active layer is conformally deposited over the first portion of the dielectric layer on the first sidewall of the first electrode and over the second portion of the second sidewall of the second electrode.

16. The method of claim 13 wherein forming the electro-optic modulator that is arranged over the portion of the waveguide core comprises:
patterning a conductor layer to form the first electrode and the second electrode; and
depositing the active layer within the slot between the first sidewall of the first electrode and the second sidewall of the second electrode.

17. The method of claim 16 wherein forming the electro-optic modulator that is arranged over the portion of the waveguide core further comprises:
conformally depositing the first portion of the dielectric layer within the slot on the first sidewall of the first electrode and the second portion of the dielectric layer within the slot on the second sidewall of the second electrode.

18. The structure of claim 1 wherein the active layer is comprised of vanadium oxide, germanium-antimony telluride, or a combination of one or both of these materials with indium-tin oxide.

19. The structure of claim 1 wherein the active layer is comprised of an electro-optic polymer or a liquid crystal.

20. The structure of claim 1 wherein the dielectric layer is comprised of silicon dioxide, and the first electrode and the second electrode are comprised of a metal.

Assignees

• Globalfoundries Inc

Inventors

• Bian Yusheng
• Jacob Ajey Poovannummoottil
• Thomas Abu

Classifications

• G02F1/29 Primary

  for the control of the position or the direction of light beams, i.e. deflection · CPC title

• G02F2201/066

  channel; buried · CPC title

• G02F2203/10

  plasmon · CPC title