Ring modulators with low-loss and large free spectral range (fsr) on a silicon-on-insulator (soi) platform
US-2024369864-A1 · Nov 7, 2024 · US
Electro-optical modulator
US9002144B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9002144-B2 |
| Application number | US-201013395329-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 8, 2010 |
| Priority date | Sep 10, 2009 |
| Publication date | Apr 7, 2015 |
| Grant date | Apr 7, 2015 |
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Abstract
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A downsized, low-power electro-optical modulator that achieves reducing both of the additional resistance in the modulation portion and the optical loss each caused by electrodes at the same time is provided. The electro-optical modulator includes a rib waveguide formed by stacking a second semiconductor layer 9 having a different conductivity type from a first semiconductor layer 8 on the first semiconductor layer 8 via a dielectric film 11 , and the semiconductor layers 8 and 9 are connectable to an external terminal via highly-doped portions 4 and 10 , respectively. In a region in the vicinity of contact surfaces of the semiconductor layers 8 and 9 with the dielectric film 11 , a free carrier is accumulated, removed, or inverted by an electrical signal from the external terminal, and whereby a concentration of the free carrier in an electric field region of an optical signal is modulated, so that a phase of the optical signal can be modulated. At least one of the semiconductor layers 8 and 9 is wider than the stacked portion. At least one of the highly-doped portions 4 and 10 is formed outside the stacked portion.
First claim
Opening claim text (preview).
The invention claimed is: 1. An electro-optical modulator comprising: a first semiconductor layer; a second semiconductor layer; and a dielectric film, wherein the first semiconductor layer and the second semiconductor layer are being doped so that a conductivity type of the first semiconductor layer is different from that of the second semiconductor layer, a portion of the first semiconductor layer is a first highly-doped portion with a high doping concentration compared…
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Physics · mapped topic
Physics · mapped topic
Physics · mapped topic
Physics · mapped topic
- G02F1/2257Primary
Physics · mapped topic
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- What does patent US9002144B2 cover?
- A downsized, low-power electro-optical modulator that achieves reducing both of the additional resistance in the modulation portion and the optical loss each caused by electrodes at the same time is provided. The electro-optical modulator includes a rib waveguide formed by stacking a second semiconductor layer 9 having a different conductivity type from a first semiconductor layer 8 on the …
- Who is the assignee on this patent?
- Fujikata Junichi, Ushida Jun, Toda Akio, and 2 more
- What technology area does this patent fall under?
- Primary CPC classification G02F1/2257. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Apr 07 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).