Silicon-based electro-optic modulator

Patent metadata

Field	Value
Publication number	US-9703125-B2
Application number	US-201314777791-A
Country	US
Kind code	B2
Filing date	Nov 28, 2013
Priority date	Mar 26, 2013
Publication date	Jul 11, 2017
Grant date	Jul 11, 2017

Abstract

Provided is a silicon-based electro-optic modulator which is small in size and capable of high speed operation. A first silicon semiconductor layer ( 120 ) doped to exhibit a first type of conductivity and a second semiconductor layer ( 160 ) doped to exhibit a second type of conductivity are at least partly stacked together, and a relatively thin dielectric ( 150 ) is formed at the interface between the stacked first and second silicon semiconductor layers ( 120, 160 ). The first silicon semiconductor layer ( 120 ) has a rib waveguide shape ( 130 ) comprising a rib portion ( 131 ) and slab portions ( 132 ). A first heavily doped region ( 140 ) formed by a high concentration doping process is arranged at a location, in the first silicon semiconductor layer ( 120 ), neighboring to each of the slab portions ( 132 ). The first heavily doped region ( 140 ) has almost the same height as that of the rib portion ( 131 ) of the rib waveguide ( 130 ).

First claim

What is claimed is:

1. A silicon-based electro-optic modulator
having an SIS (semiconductor-insulator-semiconductor) junction in which a first silicon semiconductor layer doped to exhibit a first type of conductivity and a second semiconductor layer doped to exhibit a second type of conductivity are at least partly stacked together, and a relatively thin dielectric is formed at the interface between the stacked first and second silicon semiconductor layers, and
exploiting that the free carrier concentration felt by an optical signal electric field is modulated as a result of free carriers' being accumulated, depleted or inverted on each side of the relatively thin dielectric layer by electrical signals from electrical terminals connected with, respectively, the first and second silicon semiconductor layers, wherein:
the first silicon semiconductor layer is fabricated into a rib waveguide shape comprising a rib portion, which is formed into a protruding shape and to become the core of the rib waveguide, and slab portions which are located on respective sides of the rib portion and connected with the rib portion;
the silicon-based electro-optic modulator comprises a first heavily doped region formed by a high concentration doping process, in a portion of the first silicon semiconductor layer neighboring to each of the slab portions, and a second heavily doped region formed by high concentration doping into a portion of the second silicon semiconductor layer; and
the first heavily doped region has almost the same height as that of the rib portion of the rib waveguide,
wherein a top region of the rib portion consists of a Si 1-x Ge x (x=0.01 to 0.9) layer, and more specifically, consists of a stack structure of at least two or more layers having different Si 1-x Ge x (x=0.01 to 0.9) compositions.

2. The silicon-based electro-optic modulator according to claim 1 , wherein,
within the second silicon semiconductor layer, the thickness of a region located just above the rib portion is smaller than that of the second heavily doped region.

3. The silicon-based electro-optic modulator according to claim 1 , wherein
a top region of the rib portion consists of a Si 1-x Ge x (x=0.01 to 0.9) layer, and more specifically, consists of a structure in which the Si 1-x Ge x (x=0.01 to 0.9) composition is modulated in the thickness direction.

4. The silicon-based electro-optic modulator according to claim 1 , wherein
a top region of the rib portion consists of a Si 1-x Ge x (x=0.01 to 0.9) layer with lattice strain.

5. The silicon-based electro-optic modulator according to claim 1 , wherein
the first and second silicon semiconductor layers each include at least one layer selected from a group consisting of layers of polycrystalline silicon, amorphous silicon, strained silicon, single crystal silicon and Si 1-x Ge x .

6. The silicon-based electro-optic modulator according to claim 1 , wherein
an optical modulated signal is generated by applying at least one electrical modulated signal, as input, to at least one of the first and second heavily doped regions.

7. A Mach-Zehnder interferometer type electro-optic modulator comprising:
a first arm which is a silicon-based electro-optic modulator according to claim 1 ;
a second arm which is a silicon-based electro-optic modulator according to claim 1 and arranged parallel to the first arm;
a light splitting unit which splits light at the input side; and a light combining unit which combines light at the output side, wherein
optical intensity modulated signals are generated by performing phase modulation of optical signals in the first and second arms and by causing phase interference by means of the light combining unit.

8. The Mach-Zehnder interferometer type electro-optic modulator according to claim 7 , wherein
the first and second arms are configured asymmetrically to each other.

9. The Mach-Zehnder interferometer type electro-optic modulator according to claim 7 , wherein
the light splitting unit gives an input signal distribution ratio other than 1:1 to the first and second arms.

10. A modulator device comprising:
a plurality of Mach-Zehnder interferometer type electro-optic modulators according to claim 7 ; and
arranging the plurality of Mach-Zehnder interferometer type electro-optic modulators in parallel.

11. A modulator device comprising:
a plurality of Mach-Zehnder interferometer type electro-optic modulators according to claim 7 ; and
arranging the plurality of Mach-Zehnder interferometer type electro-optic modulators in series.

12. The silicon-based electro-optic modulator according to claim 1 , wherein
the first and second silicon semiconductor layers each include at least one layer selected from a group consisting of layers of polycrystalline silicon, amorphous silicon, strained silicon, single crystal silicon and Si 1-x Ge x .

13. The silicon-based electro-optic modulator according to claim 3 , wherein
the first and second silicon semiconductor layers each include at least one layer selected from a group consisting of layers of polycrystalline silicon, amorphous silicon, strained silicon, single crystal silicon and Si 1-x Ge x .

14. The silicon-based electro-optic modulator according to claim 1 , wherein
an optical modulated signal is generated by applying at least one electrical modulated signal, as input, to at least one of the first and second heavily doped regions.

15. The silicon-based electro-optic modulator according to claim 3 , wherein
an optical modulated signal is generated by applying at least one electrical modulated signal, as input, to at least one of the first and second heavily doped regions.

16. A Mach-Zehnder interferometer type electro-optic modulator comprising:
a first arm which is a silicon-based electro-optic modulator according to claim 1 ;
a second arm which is a silicon-based electro-optic modulator according to claim 1 and arranged parallel to the first arm;
a light splitting unit which splits light at the input side; and a light combining unit which combines light at the output side, wherein
optical intensity modulated signals are generated by performing phase modulation of optical signals in the first and second arms and by causing phase interference by means of the light combining unit.

17. A Mach-Zehnder interferometer type electro-optic modulator comprising:
a first arm which is a silicon-based electro-optic modulator according to claim 3 ;
a second arm which is a silicon-based electro-optic modulator according to claim 3 and arranged parallel to the first arm;
a light splitting unit which splits light at the input side; and a light combining unit which combines light at the output side, wherein
optical intensity modulated signals are generated by performing phase modulation of optical signals in the first and second arms and by causing phase interference by means of the light combining unit.

Assignees

• Nec Corp

Inventors

• Fujikata Junichi
• Takahashi Shigeki

Classifications

• G02F2201/063

  ridge; rib; strip loaded · CPC title

• G02F1/025 Primary

  in an optical waveguide structure (G02F1/017, {G02F1/2257} take precedence) · CPC title

• G02F1/2257

  the optical waveguides being made of semiconducting material · CPC title

• G02F2001/212

  Physics · mapped topic

• G02F2001/0113

  Physics · mapped topic