Growth of nitride films
US-2016340783-A1 · Nov 24, 2016 · US
Method of pulsed laser-based large area graphene synthesis on metallic and crystalline substrates
US10683586B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10683586-B2 |
| Application number | US-201515116364-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 4, 2015 |
| Priority date | Feb 4, 2014 |
| Publication date | Jun 16, 2020 |
| Grant date | Jun 16, 2020 |
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- Title
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Abstract
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A method of making graphene includes providing a seed gas in the presence of a metallic substrate, providing a pulsed, ultraviolet laser beam, and moving the substrate or the laser beam relative to the other, thereby advancing a graphene crystallization front and forming an ordered graphene structure. In some instances, the substrate can have a surface with two-fold atomic symmetry. A method of recrystallizing graphene includes providing a pulsed, ultraviolet laser beam to a polycrystalline graphene sheet.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of making graphene, comprising: providing a seed gas in the presence of a metallic substrate having a surface; irradiating the substrate with a pulsed, ultraviolet laser beam at an angle of about 30 degrees or less to photodissociate the seed gas so that carbon atoms of the photodissociated seed gas form graphene crystals on the substrate; and moving the substrate or the ultraviolet laser beam relative to the other, thereby advancing a graphene crystallization front and forming an ordered graphene structure. 2. The method of claim 1 , wherein the ultraviolet laser beam has a pulse duration of about 10 nanoseconds. 3. The method of claim 1 , wherein the seed gas is methane or acetylene. 4. The method of claim 1 , wherein the wavelength of the ultraviolet laser beam is approximately 193 nm, 248 nm, or 308 nm. 5. The method of claim 1 , wherein the metallic substrate is nickel, copper, scandium, titanium, vanadium, manganese, iron, cobalt, ruthenium, platinum, germanium, silicon carbide, silicon, or a copper-nickel alloy. 6. The method of claim 5 , wherein the substrate has a two-fold symmetric atomic surface. 7. The method of claim 6 , wherein the substrate has a germanium [110] surface. 8. The method of claim 7 , further comprising preparing the germanium [110] surface by contacting the germanium [110] surface with one or more of piranha solution (H 2 O 2 :H 2 SO 4 ) and hydrofluoric acid. 9. The method of claim 6 , wherein the substrate has a silicon [110] surface. 10. The method of claim 1 , further comprising annealing the ordered graphene structure with the laser.
Assignees
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Classifications
Graphene · CPC title
- C01B32/186Primary
by chemical vapour deposition [CVD] · CPC title
Size or surface area · CPC title
Manufacture or treatment of nanostructures · CPC title
by epitaxial growth · CPC title
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- What does patent US10683586B2 cover?
- A method of making graphene includes providing a seed gas in the presence of a metallic substrate, providing a pulsed, ultraviolet laser beam, and moving the substrate or the laser beam relative to the other, thereby advancing a graphene crystallization front and forming an ordered graphene structure. In some instances, the substrate can have a surface with two-fold atomic symmetry. A method of…
- Who is the assignee on this patent?
- Nat Univ Singapore
- What technology area does this patent fall under?
- Primary CPC classification C01B32/186. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Jun 16 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 5 related publications on this page (citations in our corpus or others sharing the same primary CPC).