Thermoelectric material, thermoelectric module, optical sensor, and method for manufacturing thermoelectric material
US-2016300994-A1 · Oct 13, 2016 · US
US10672966B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10672966-B2 |
| Application number | US-201414303878-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 13, 2014 |
| Priority date | May 27, 2011 |
| Publication date | Jun 2, 2020 |
| Grant date | Jun 2, 2020 |
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A process for manufacturing a thermoelectric material having a plurality of grains and grain boundaries. The process includes determining a material composition to be investigated for the thermoelectric material and then determining a range of values of grain size and/or grain boundary barrier height obtainable for the material composition using current state of the art manufacturing techniques. Thereafter, a range of figure of merit values for the material composition is determined as a function of the range of values of grain size and/or grain boundary barrier height. And finally, a thermoelectric material having the determined material composition and an average grain size and grain boundary barrier height corresponding to the maximum range of figure of merit values is manufactured.
Opening claim text (preview).
We claim: 1. A thermoelectric material comprising: a first matrix phase; an inter-grain phonon scattering second phase comprising a plurality of oxide nanoparticles; and a plurality of third phase grain boundaries, wherein said plurality of third phase grain boundaries are zinc antimony modified grain boundaries consisting of zinc and antimony with an average thickness within a range of 2-75 nm and wherein said plurality of third phase grain boundaries have a grain boundary barrier height within a range of 10-300 meV. 2. The thermoelectric material of claim 1 , wherein said first matrix phase has an average grain size within a range of 5-100 nm. 3. The thermoelectric material of claim 2 , wherein said average grain size is within a range of 5-50 nm. 4. The thermoelectric material of claim 3 , wherein said average grain size is within a range of 5-25 nm. 5. The thermoelectric material of claim 1 , wherein said first matrix phase is a bismuth antimony telluride phase. 6. The thermoelectric material of claim 1 , wherein said plurality of oxide nanoparticles have an average diameter within a range of 2-100 nm. 7. The thermoelectric material of claim 6 , wherein said average diameter is within a range of 4-50 nm. 8. The thermoelectric material of claim 7 , wherein said average diameter is within a range of 6-14 nm. 9. The thermoelectric material of claim 6 , wherein said plurality of oxide nanoparticles are zinc oxide nanoparticles. 10. The thermoelectric material of claim 1 , wherein said average thickness is within a range of 5-70 nm. 11. The thermoelectric material of claim 10 , wherein said average thickness is within a range of 10-70 nm. 12. The thermoelectric material of claim 11 , wherein said average thickness is within a range of 15-65 nm. 13. The thermoelectric material of claim 12 , wherein said average thickness is within a range of 27-61 nm.
Nanometer sized, i.e. from 1-100 nanometer · CPC title
Copper oxides, cuprates or oxide-forming salts thereof, e.g. CuO or Cu2O · CPC title
based on sulfides or selenides {or tellurides} · CPC title
Organic acids, e.g. EDTA, citrate, acetate, oxalate · CPC title
based on ferrites · CPC title
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