Magnetoresistive effect element, magnetic head, sensor, high frequency filter, and oscillation element
US-10453598-B2 · Oct 22, 2019 · US
Magnetoresistive effect element, magnetic head, sensor, high frequency filter, and oscillation element
US10665374B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10665374-B2 |
| Application number | US-201916564602-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 9, 2019 |
| Priority date | Jun 29, 2017 |
| Publication date | May 26, 2020 |
| Grant date | May 26, 2020 |
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- Title
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- Abstract
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Abstract
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There is provided a magnetoresistive effect element having improved magnetoresistive effect. A magnetoresistive effect element MR includes a first ferromagnetic layer 4 as a fixed magnetization layer, a second ferromagnetic layer 6 as a free magnetization layer, and a nonmagnetic spacer layer 5 provided between the first ferromagnetic layer 4 and the second ferromagnetic layer 6. The nonmagnetic spacer layer 5 includes at least one of a first insertion layer 5A provided under the nonmagnetic spacer layer 5 and a second insertion layer 5C provided over the nonmagnetic spacer layer 5. The first insertion layer 5A and the second insertion layer 5C are made of Fe2TiSi.
First claim
Opening claim text (preview).
What is claimed is: 1. A magnetoresistive effect element comprising: a first layer as a ferromagnetic layer being a fixed magnetization layer; a second layer as a ferromagnetic layer being a free magnetization layer; a nonmagnetic spacer layer provided between the first layer and the second layer, a third layer provided on a surface of the first layer, which is opposite to a surface of the first layer in contact with the nonmagnetic spacer layer; and a fourth layer provided on a surface of the second layer, which is opposite to a surface of the second layer in contact with the nonmagnetic spacer layer, wherein the third layer and the fourth layer are made of Fe 2 TiSi. 2. The magnetoresistive effect element according to claim 1 , wherein a thickness of each of the third layer and the fourth layer is equal to or greater than 1 nm. 3. A magnetic head comprising: the magnetoresistive effect element according to claim 1 . 4. A sensor comprising: the magnetoresistive effect element according to claim 1 . 5. A high frequency filter comprising: the magnetoresistive effect element according to claim 1 . 6. An oscillation element comprising: the magnetoresistive effect element according to claim 1 .
Assignees
Inventors
Classifications
large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices · CPC title
- H01F10/3259Primary
Spin-exchange-coupled multilayers comprising at least a nanooxide layer [NOL], e.g. with a NOL spacer · CPC title
using multilayer structures, e.g. giant magnetoresistance sensors (thin magnetic films H01F10/00) · CPC title
Networks using elements or techniques not provided for in groups H03H3/00 - H03H21/00 · CPC title
Frequency selective two-port networks · CPC title
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- What does patent US10665374B2 cover?
- There is provided a magnetoresistive effect element having improved magnetoresistive effect. A magnetoresistive effect element MR includes a first ferromagnetic layer 4 as a fixed magnetization layer, a second ferromagnetic layer 6 as a free magnetization layer, and a nonmagnetic spacer layer 5 provided between the first ferromagnetic layer 4 and the second ferromagnetic layer 6. The nonmagneti…
- Who is the assignee on this patent?
- Tdk Corp
- What technology area does this patent fall under?
- Primary CPC classification H01F10/3259. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue May 26 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 6 related publications on this page (citations in our corpus or others sharing the same primary CPC).