Magnetoresistive effect element, magnetic head, sensor, high frequency filter, and oscillation element

Patent metadata

Field	Value
Publication number	US-10453598-B2
Application number	US-201816020373-A
Country	US
Kind code	B2
Filing date	Jun 27, 2018
Priority date	Jun 29, 2017
Publication date	Oct 22, 2019
Grant date	Oct 22, 2019

Abstract

There is provided a magnetoresistive effect element having improved magnetoresistive effect. A magnetoresistive effect element MR includes a first ferromagnetic layer 4 as a fixed magnetization layer, a second ferromagnetic layer 6 as a free magnetization layer, and a nonmagnetic spacer layer 5 provided between the first ferromagnetic layer 4 and the second ferromagnetic layer 6 . The nonmagnetic spacer layer 5 includes at least one of a first insertion layer 5 A provided under the nonmagnetic spacer layer 5 and a second insertion layer 5 C provided over the nonmagnetic spacer layer 5 . The first insertion layer 5 A and the second insertion layer 5 C are made of Fe 2 TiSi.

First claim

What is claimed is:

1. A magnetoresistive effect element comprising:
a first ferromagnetic layer as a fixed magnetization layer;
a second ferromagnetic layer as a free magnetization layer; and
a nonmagnetic spacer layer provided between the first ferromagnetic layer and the second ferromagnetic layer,
wherein the nonmagnetic spacer layer includes at least one of a first insertion layer provided under the nonmagnetic spacer layer and a second insertion layer provided over the nonmagnetic spacer layer, and
the first insertion layer and the second insertion layer are made of Fe 2 TiSi.

2. The magnetoresistive effect element according to claim 1 ,
wherein a thickness of each of the first insertion layer and the second insertion layer is equal to or smaller than 3 nm.

3. The magnetoresistive effect element according to claim 1 ,
wherein at least one of the first ferromagnetic layer and the second ferromagnetic layer is made of a ferromagnetic material including a Heusler alloy.

4. The magnetoresistive effect element according to claim 1 ,
wherein the nonmagnetic spacer layer includes at least one metal element of Ag, Au, Cu, Cr, V, Al, W, and Pt.

5. The magnetoresistive effect element according to claim 1 ,
wherein the nonmagnetic spacer layer is made of MgO, Al 2 O 3 , TiO 2 , or HfO 2 , or is a tunnel barrier having a spinel structure.

6. The magnetoresistive effect element according to claim 5 ,
wherein the tunnel barrier having the spinel structure is made of any one of MgAl 2 O 4 , ZnAl 2 O 4 , γ-Al 2 O 3 , and MgGa 2 O 4 , or has a mixed crystal structure in which one of MgAl 2 O 4 , ZnAl 2 O 4 , γ-Al 2 O 3 , and MgGa 2 O 4 is provided as a main component.

7. A magnetic head comprising:
the magnetoresistive effect element according to claim 1 .

8. A sensor comprising:
the magnetoresistive effect element according to claim 1 .

9. A high frequency filter comprising:
the magnetoresistive effect element according to claim 1 .

10. An oscillation element comprising:
the magnetoresistive effect element according to claim 1 .

Assignees

• Tdk Corp

Inventors

• INUBUSHI Kazuumi
• Nakada Katsuyuki
• Sasaki Tomoyuki

Classifications

• H03H2/00

  Networks using elements or techniques not provided for in groups H03H3/00 - H03H21/00 · CPC title

• H01F10/1936

  Half-metallic, e.g. epitaxial CrO2 or NiMnSb films · CPC title

• G11B5/3909

  Arrangements using a magnetic tunnel junction · CPC title

• G01R33/098

  comprising tunnel junctions, e.g. tunnel magnetoresistance sensors · CPC title

• G11B2005/3996

  large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices · CPC title