Monocrystalline magneto resistance element, method for producing the same and method for using same

Patent metadata

Field	Value
Publication number	US-10205091-B2
Application number	US-201715424515-A
Country	US
Kind code	B2
Filing date	Feb 3, 2017
Priority date	Dec 4, 2015
Publication date	Feb 12, 2019
Grant date	Feb 12, 2019

Abstract

To provide a key monocrystalline magnetoresistance element necessary for accomplishing mass production and cost reduction for applying a monocrystalline giant magnetoresistance element using a Heusler alloy to practical devices. A monocrystalline magnetoresistance element of the present invention includes a silicon substrate 11 , a base layer 12 having a B2 structure laminated on the silicon substrate 11 , a first non-magnetic layer 13 laminated on the base layer 12 having a B2 structure, and a giant magnetoresistance effect layer 17 having at least one laminate layer including a lower ferromagnetic layer 14 , an upper ferromagnetic layer 16 , and a second non-magnetic layer 15 disposed between the lower ferromagnetic layer 14 and the upper ferromagnetic layer 16.

First claim

What is claimed is:

1. A magnetoresistance element comprising:
a silicon substrate;
a base layer having a B2 structure, laminated on the silicon substrate;
a first non-magnetic layer laminated on the base layer having a B2 structure; and
a giant magnetoresistance effect layer having at least one laminate layer including a lower ferromagnetic layer, an upper ferromagnetic layer, and a second non-magnetic layer disposed between the lower ferromagnetic layer and the upper ferromagnetic layer, wherein the silicon substrate is a Si(001) monocrystalline substrate,
the base layer having a B2 structure is at least one selected from the group consisting of NiAl, CoAl, and FeAl,
the first non-magnetic layer is at least one selected from the group consisting of Ag, V, Cr, W, Mo, Au, Pt, Pd, Ta, Ru, Re, Rh, NiO, CoO, TiN, and CuN,
the lower ferromagnetic layer comprises at least one selected from the group consisting of a Co-based Heusler alloy, Fe, and CoFe,
the second non-magnetic layer comprises at least one selected from the group consisting of Ag, Cr, W, Mo, Au, Pt, Pd, Ta, and Rh, and
the upper ferromagnetic layer comprises at least one selected from the group consisting of a Co-based Heusler alloy, Fe, and CoFe.

2. The magnetoresistance element according to claim 1 , wherein
the Co-based Heusler alloy is represented by formula Co 2 YZ, and
in the formula, Y comprises at least one selected from the group consisting of Ti, V, Cr, Mn, and Fe, and Z comprises at least one selected from the group consisting of Al, Si, Ga, Ge, and Sn.

3. The magnetoresistance element according to claim 1 , wherein
the base layer having a B2 structure has a film thickness of 10 nm or more and less than 200 nm,
the first non-magnetic layer has a film thickness of 0.5 nm or more and less than 100 nm,
the lower ferromagnetic layer has a film thickness of 1 nm or more and less than 10 nm,
the second non-magnetic layer has a film thickness of 1 nm or more and less than 20 nm, and
the upper ferromagnetic layer has a film thickness of 1 nm or more and less than 10 nm.

4. The magnetoresistance element according to claim 1 , having a magnetoresistance ratio of 20% or more and a resistance change-area product (ΔRA) of 5 mΩμm 2 or more.

5. The magnetoresistance element according to claim 1 , further comprising a diffusion preventing layer inserted between the base layer having a B2 structure and the lower ferromagnetic layer.

6. The magnetoresistance element according to claim 5 , wherein the diffusion preventing layer comprises at least one selected from the group consisting of Fe and CoFe.

7. The magnetoresistance element according to claim 6 , wherein the diffusion preventing layer has a film thickness of 1 nm or more and less than 30 nm.

8. A device using the magnetoresistance element according to claim 1 .

9. The device according to claim 8 , wherein the device is any one of a read head used on a memory element, a magnetic field sensor, a spin electronic circuit, and a tunnel magnetoresistance (TMR) device.

10. A device using a magnetoresistance element, the magnetoresistance element comprising:
a silicon substrate;
a base layer having a B2 structure, laminated on the silicon substrate;
a first non-magnetic layer laminated on the base layer having a B2 structure; and
a giant magnetoresistance effect layer having at least one laminate layer including a lower ferromagnetic layer, an upper ferromagnetic layer, and a second non-magnetic layer disposed between the lower ferromagnetic layer and the upper ferromagnetic layer,
wherein the device is any one of a read head used on a memory element, a magnetic field sensor, a spin electronic circuit, and a tunnel magnetoresistance (TMR) device.

Assignees

• Nat Inst Materials Science

Inventors

• Chen Jiamin
• Sakuraba Yuya
• Liu Jun
• Sukegawa Hiroaki
• Hono Kazuhiro

Classifications

• H01F10/3272

  by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets · CPC title

• H01F10/1936

  Half-metallic, e.g. epitaxial CrO2 or NiMnSb films · CPC title

• H01F10/3254

  the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ] · CPC title

• H01F10/28

  characterised by the composition of the substrate · CPC title

• H01F10/16

  containing cobalt ({H01F10/126} , H01F10/13 take precedence) · CPC title