Cross-coupled transistor circuit defined on four gate electrode tracks

Patent metadata

Field	Value
Publication number	US-10658385-B2
Application number	US-201313831636-A
Country	US
Kind code	B2
Filing date	Mar 15, 2013
Priority date	Mar 13, 2008
Publication date	May 19, 2020
Grant date	May 19, 2020

Abstract

A first PMOS transistor is defined by a gate electrode extending along a first gate electrode track. A second PMOS transistor is defined by a gate electrode extending along a second gate electrode track. A first NMOS transistor is defined by a gate electrode extending along a third gate electrode track. A second NMOS transistor is defined by a gate electrode extending along a fourth gate electrode track. The gate electrodes of the first PMOS transistor and the first NMOS transistor are electrically connected to a first gate node. The gate electrodes of the second PMOS transistor and the second NMOS transistor are electrically connected to a second gate node. Each of the first PMOS transistor, the first NMOS transistor, the second PMOS transistor, and the second NMOS transistor has a respective diffusion terminal electrically connected to a common output node.

First claim

What is claimed is:

1. A cross-coupled transistor circuit, comprising:
a first PMOS transistor defined by a gate electrode extending along a first gate electrode track;
a second PMOS transistor defined by a gate electrode extending along a second gate electrode track;
a first NMOS transistor defined by a gate electrode extending along a third gate electrode track;
a second NMOS transistor defined by a gate electrode extending along a fourth gate electrode track,
wherein th…

Assignees

• Tela Innovations Inc

Inventors

• Becker Scott T
• Mali Jim
• Lambert Carole

Classifications

• G06F30/39

  Physics · mapped topic

• G06F30/392

  Physics · mapped topic

• H01L2924/00

  Electricity · mapped topic

• H01L27/1104

  Electricity · mapped topic

• H01L2027/11887

  Electricity · mapped topic