Memory devices having signal routing structures at bonding interfaces
US-2024404976-A1 · Dec 5, 2024 · US
Semiconductor chip including region including linear-shaped conductive structures forming gate electrodes and having electrical connection areas arranged relative to inner region between transistors of different types and associated methods
US9035359B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9035359-B2 |
| Application number | US-201414304778-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 13, 2014 |
| Priority date | Mar 9, 2006 |
| Publication date | May 19, 2015 |
| Grant date | May 19, 2015 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
A first linear-shaped conductive structure (LCS) forms gate electrodes (GE's) of a first transistor of a first transistor type and a first transistor of a second transistor type. A second LCS forms a GE of a second transistor of the first transistor type. A third LCS forms a GE of a second transistor of the second transistor type. A fourth LCS forms a GE of a third transistor of the first transistor type. A fifth LCS forms a GE of a third transistor of the second transistor type. A sixth LCS forms a GE of a fourth transistor of the first transistor type and a fourth transistor of the second transistor type. Transistors of the first transistor type are collectively separated from transistors of the second transistor type by an inner region. The second, third, fourth, and fifth LCS's have respective electrical connection areas arranged relative to the inner region.
First claim
Opening claim text (preview).
What is claimed is: 1. A semiconductor chip, comprising: a region including at least seventeen linear-shaped conductive structures oriented to extend lengthwise in a first direction, each of the at least seventeen linear-shaped conductive structures having a corresponding lengthwise centerline oriented in the first direction, each of the at least seventeen linear-shaped conductive structures positioned such that a distance as measured in a second direction between its lengthwise…
Assignees
Inventors
Classifications
Physics · mapped topic
Physics · mapped topic
Physics · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Patent family
Related publications grouped by family.
External sources
Next steps
Free tools are coming soon. Tell us what you want to track and we'll notify you.
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US9035359B2 cover?
- A first linear-shaped conductive structure (LCS) forms gate electrodes (GE's) of a first transistor of a first transistor type and a first transistor of a second transistor type. A second LCS forms a GE of a second transistor of the first transistor type. A third LCS forms a GE of a second transistor of the second transistor type. A fourth LCS forms a GE of a third transistor of the first trans…
- Who is the assignee on this patent?
- Tela Innovations Inc
- What technology area does this patent fall under?
- Primary CPC classification H10D84/907. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue May 19 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).