Gas control system, deposition apparatus including gas control system, and program and gas control method used for gas control system

Patent metadata

Field	Value
Publication number	US-10655220-B2
Application number	US-201815911650-A
Country	US
Kind code	B2
Filing date	Mar 5, 2018
Priority date	Mar 10, 2017
Publication date	May 19, 2020
Grant date	May 19, 2020

Abstract

The present invention makes it easy to control the amount of material gas led out of a tank. Accordingly, carrier gas is introduced into a tank containing a material and together with the carrier gas, from the tank, material gas produced by vaporization of the material is led out. A control part controls the flow rate of the carrier gas so that a concentration index value obtained by measuring mixed gas led out of the tank and indicating the concentration of the material gas in the mixed gas comes close to a predetermined target concentration index value. In addition, the control part controls the flow rate of the carrier gas to change at a predetermined change rate, and then controls the flow rate of the carrier gas on the basis of the deviation between the concentration index value and the target concentration index value.

First claim

The invention claimed is:

1. A gas control system adapted to introduce carrier gas into a tank containing a material and together with the carrier gas, from the tank, lead out material gas produced by vaporization of the material, the gas control system comprising:
a control part that controls a flow rate of the carrier gas so that a concentration index value obtained by measuring mixed gas led out of the tank and directly or indirectly indicating concentration of the material gas in the mixed gas approaches a predetermined target concentration index value, wherein
the control part performs a first control that controls the flow rate of the carrier gas to change at a constant change rate after introducing the carrier gas into the tank until the concentration index value reaches a control switching concentration index value that is lower than the predetermined target concentration index value, and after the concentration index value becomes the control switching concentration index value, the control part performs a second control that controls the flow rate of the carrier gas on a basis of a deviation between the concentration index value and the target concentration index value.

2. The gas control system according to claim 1 , wherein
the control part switches to the second control before the concentration index value reaches the target concentration index value.

3. The gas control system according to claim 1 , wherein
in the first control, the control part sets the constant change rate with reference to an initial change rate of the concentration index value of the mixed gas led out of the tank just after starting to introduce the carrier gas.

4. The gas control system according to claim 1 , further comprising:
an initial change rate data storage part that preliminarily stores initial change rate data obtained by measuring the initial change rate under various conditions, wherein
in the first control, the control part sets the constant change rate with reference to the initial change rate data.

5. The gas control system according to claim 1 , wherein
in the second control, the control part shifts a change rate of the flow rate of the carrier gas by a predetermined value when the concentration index value switches from any one of a first state of being within a predetermined target concentration index value range including the target concentration index value and a second state of being outside the target index value range to the other.

6. The gas control system according to claim 5 , wherein
in the second control, the control part shifts the change rate of the flow rate of the carrier gas so as to increase the change rate by the predetermined value when switching from the first state to the second state, and when switching from the second state to the first state, shifts the change rate of the flow rate of the carrier gas so as to decrease the change rate by the predetermined value.

7. The gas control system according to claim 6 , wherein
in any one or both of the first state and the second state of the second control, the control part controls the flow rate of the carrier gas so as to change the flow rate at the constant change rate.

8. The gas control system according to claim 6 , wherein
the second control is PID control, and
in the PID control as the second control, the control part sets a proportional gain to a larger value in the second state than in the first state.

9. The gas control system according to claim 6 , wherein
in the second control, the control part controls the change rate of the flow rate of the carrier gas in the first state to zero.

10. The gas control system according to claim 1 , wherein
between the first control and the second control, the control part performs a third control that controls a change rate of the flow rate of the carrier gas to zero.

11. The gas control system according to claim 1 , wherein
between the first control and the second control, the control part performs a fourth control that performs PID control of the flow rate of the carrier gas on the basis of the deviation between the concentration index value and the target concentration index value.

12. The gas control system according to claim 11 , wherein
the control part sets a proportional gain of PID control as the second control to a smaller value than the PID control as the fourth control.

13. The gas control system according to claim 1 , wherein
the mixed gas is gas produced by further adding diluent gas to the material and carrier gases led out of the tank, and
the control part controls the flow rate of the carrier gas and a flow rate of the diluent gas so that a total amount of the carrier gas and the diluent gas in the mixed gas is kept constant.

14. A deposition apparatus that supplies mixed gas to a deposition chamber through the gas control system according to claim 1 .

15. A gas control system adapted to introduce carrier gas into a tank containing a material, and by together with the carrier gas, from the tank, leading out material gas produced by vaporization of the material, intermittently lead out a predetermined amount of the material gas from the tank, the gas control system comprising:
a control part that performs PID control of a flow rate of the carrier gas so that a concentration index value obtained by measuring mixed gas led out of the tank and directly or indirectly indicating concentration of the material gas in the mixed gas approaches a predetermined target concentration index value; and
a calibration data storage part that as calibration data, stores a temporal change in the concentration index value obtained by PID control performed by the control part on the predetermined amount of the material gas led out of the tank for a first time, wherein
when performing the PID control of the predetermined amount of the material gas led out of the tank for a second time or thereafter, the control part refers to the calibration data to set a controllable range that defines upper and lower limits of an operation amount of the flow rate of the carrier gas, the flow rate being determined on a basis of a deviation between the concentration index value and the target concentration index value in the PID control.

16. A gas control system adapted to introduce carrier gas into a tank containing a material and together with the carrier gas, from the tank, lead out material gas produced by vaporization of the material, the gas control system comprising:
a control part that performs feedback control of a flow rate of the carrier gas on a basis of a deviation between a concentration index value obtained by measuring mixed gas led out of the tank and directly or indirectly indicating concentration of the material gas in the mixed gas and a predetermined target concentration index value so that the concentration index value approaches the target concentration index value, wherein
the control part controls a total amount of the material gas led out within a lead-out time from just after starting to introduce the carrier gas into the tank to stopping introducing the carrier gas to a predetermined target total amount.

17. The gas control system according to claim 16 , wherein
the control part successively calculates a flow rate of the material gas on a basis of the concentration of the material gas in the mixed gas and the flow rate of the carrier gas from just after starting to introducing the carrier gas into the tank, and successively resets the lead-out time with reference to a total passing amount of the material gas that is obtained by adding u

Assignees

• Horiba Stec Co Ltd

Inventors

• Sakaguchi Yuhei
• Shimizu Toru
• Minami Masakazu
• Hayashi Daisuke

Classifications

• C23C16/45502

  Flow conditions in reaction chamber · CPC title

• C23C16/45561

  Gas plumbing upstream of the reaction chamber · CPC title

• C23C16/52

  Controlling or regulating the coating process {(C23C16/45557, C23C16/279 take precedence)} · CPC title

• G05D11/138

  by sensing the concentration of the mixture, e.g. measuring pH value · CPC title

• C23C16/4482 Primary

  by bubbling of carrier gas through liquid source material · CPC title