Image sensor

Patent metadata

Field	Value
Publication number	US-10651219-B2
Application number	US-201916436447-A
Country	US
Kind code	B2
Filing date	Jun 10, 2019
Priority date	Feb 1, 2017
Publication date	May 12, 2020
Grant date	May 12, 2020

Abstract

An image sensor and a method for fabricating the same are provided, in which the image sensor includes a substrate including a first sensing region having a photoelectric device therein, a boundary isolation film partitioning the first sensing region, an inner reflection pattern film within the substrate in the sensing region, an infrared filter on the substrate, and a micro lens on the infrared filter.

First claim

What is claimed is:

1. An image sensor comprising:
a first sensing region having a color filter;
a second sensing region;
a side anti-reflection film between the first sensing region and the second sensing region;
a boundary isolation trench having a first length from a top surface of a substrate and disposed between the first sensing region and the second sensing region;
a boundary isolation film filling the boundary isolation trench;
a first inner reflection pattern film having a second length from the top surface of the substrate and disposed between a first boundary of the second sensing region and a second boundary of the second sensing region; and
a planarizing film on the top surface of the substrate,
wherein the second length is shorter than the first length,
wherein the planarizing film includes a silicon nitride, and
wherein the color filter is disposed on the planarizing film, and a bottom surface of the color filter is coplanar with a bottom surface of the side anti-reflection film.

2. The image sensor of claim 1 , wherein the color filter is a green color filter.

3. The image sensor of claim 1 , wherein the color filter is a blue color filter.

4. The image sensor of claim 1 , wherein the boundary isolation film includes hafnium oxide.

5. The image sensor of claim 1 , wherein the boundary isolation film includes aluminum oxide.

6. The image sensor of claim 5 , wherein the boundary isolation trench does not connect the top surface and a bottom surface of the substrate.

7. The image sensor of claim 5 , wherein the boundary isolation trench connects the top surface and a bottom surface of the substrate.

8. The image sensor of claim 1 , wherein the side anti-reflection film includes tungsten.

9. The image sensor of claim 1 , further comprising a second inner reflection pattern film between a first boundary of the first sensing region and a second boundary of the first sensing region.

10. The image sensor of claim 9 , wherein the boundary isolation trench does not connect the top surface and a bottom surface of the substrate.

11. The image sensor of claim 9 , wherein the boundary isolation trench connects the top surface and a bottom surface of the substrate.

12. An image sensor, comprising
a first sensing region having a color filter;
a second sensing region;
a side anti-reflection film between the first sensing region and the second sensing region;
a boundary isolation trench having a first length from a top surface of a substrate and disposed between the first sensing region and the second sensing region;
a boundary isolation film filling the boundary isolation trench;
an inner reflection pattern film having a second length from the top surface of the substrate and disposed between a first boundary of the second sensing region and a second boundary of the second sensing region; and
a first planarizing film on the top surface of the substrate,
wherein the second length is shorter than the first length,
wherein the inner reflection pattern film includes a hafnium oxide, and
wherein the color filter is disposed on the first planarizing film, and a bottom surface of the color filter is coplanar with a bottom surface of the side anti-reflection film.

13. The image sensor of claim 12 , further comprising a second planarizing film on the first planarizing film.

14. The image sensor of claim 12 , wherein the boundary isolation trench does not connect the top surface and a bottom surface of the substrate.

15. The image sensor of claim 12 , wherein the boundary isolation trench connects the top surface and a bottom surface of the substrate.

16. The image sensor of claim 13 , further comprising a micro-lens on the second planarizing film and a protection film on the micro-lens.

17. The image sensor of claim 16 , wherein the protection film is a silicon oxide film.

18. The image sensor of claim 12 , wherein the color filter is a green color filter.

19. The image sensor of claim 12 , wherein the color filter is a blue color filter.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Choi Sung Soo
• Lee Kyung Ho

Classifications

• H01L27/14621

  Electricity · mapped topic

• H01L27/14645

  Electricity · mapped topic

• H01L27/14649

  Electricity · mapped topic

• H01L31/02162

  Electricity · mapped topic

• H01L2224/48

  Electricity · mapped topic