Photodetection device and electronic device
US-2024355853-A1 · Oct 24, 2024 · US
Solid-state imaging device, method of manufacturing the same, and electronic apparatus
US8928784B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8928784-B2 |
| Application number | US-69948810-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 3, 2010 |
| Priority date | Feb 10, 2009 |
| Publication date | Jan 6, 2015 |
| Grant date | Jan 6, 2015 |
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Abstract
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A solid-state imaging device includes: a pixel region in which a plurality of pixels composed of a photoelectric conversion section and a pixel transistor is arranged; an on-chip color filter; an on-chip microlens; and a multilayer interconnection layer in which a plurality of layers of interconnections is formed through an interlayer insulating film. The solid-state imaging device further includes a light-shielding film formed through an insulating layer in a pixel boundary of a light receiving surface in which the photoelectric conversion section is arranged.
First claim
Opening claim text (preview).
What is claimed is: 1. A solid-state imaging device comprising: a substrate, in which a plurality of light-receiving portions are formed, a first side of the substrate being a light-incident surface; an interconnection layer at a second side of the substrate; a plurality of isolation regions extending from the first side of the substrate and reaching the second side of the substrate, wherein one isolation region in the plurality of isolation regions is located between each of…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8928784B2 cover?
- A solid-state imaging device includes: a pixel region in which a plurality of pixels composed of a photoelectric conversion section and a pixel transistor is arranged; an on-chip color filter; an on-chip microlens; and a multilayer interconnection layer in which a plurality of layers of interconnections is formed through an interlayer insulating film. The solid-state imaging device further incl…
- Who is the assignee on this patent?
- Watanabe Kazufumi, Maruyama Yasushi, Sony Corp
- What technology area does this patent fall under?
- Primary CPC classification H10F39/182. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jan 06 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).