Power semiconductor module and method for producing a power semiconductor module
US-10020237-B2 · Jul 10, 2018 · US
US10651121B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10651121-B2 |
| Application number | US-201916385669-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 16, 2019 |
| Priority date | Feb 24, 2017 |
| Publication date | May 12, 2020 |
| Grant date | May 12, 2020 |
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Official abstract text for this publication.
A semiconductor device includes a semiconductor chip, an electrode electrically connected to the semiconductor chip, the electrode including a looped portion, a cylindrical electrode including a main portion having a screw thread formed therein and a narrow portion continuous with the main portion, the narrow portion having a smaller width than the main portion, the cylindrical electrode being electrically connected to the electrode by the narrow portion being inserted into the looped portion, and a case for the semiconductor chip and the electrode, the case contacting the main portion while causing the screw thread and a connecting portion between the looped portion and the cylindrical electrode to be exposed.
Opening claim text (preview).
What is claimed is: 1. A semiconductor device manufacturing method, comprising: a first preparation of placing a cylindrical electrode including a main portion and a narrow portion continuous with the main portion on a lower mold half, the narrow portion having a smaller width than the main portion, to cause the main portion to contact the lower mold half; a second preparation of placing an electrode including a looped portion on the lower mold half to house part of the narrow portion in the looped portion and to cause the narrow portion to protrude from the looped portion upward; a mold clamping of clamping an upper mold half and the lower mold half together to compress with the upper mold half a portion of the narrow portion which protrudes from the looped portion upward, thus forming a wide portion spreading over the looped portion; and a resin injection of injecting resin into a cavity surrounded by the upper mold half and the lower mold half to cause the resin to contact a side surface of the main portion. 2. The semiconductor device manufacturing method according to claim 1 , wherein the upper mold half has a swaging pin, and, in the mold clamping, a portion of the narrow portion which protrudes from the looped portion upward is compressed with the swaging pin to form the wide portion. 3. The semiconductor device manufacturing method according to claim 2 , wherein the narrow portion has a countersink portion formed in a portion thereof which contacts the swaging pin in the mold clamping. 4. The semiconductor device manufacturing method according to claim 1 , wherein after the resin injection is finished, the wide portion is exposed from the resin.
between a chip and a stacked insulating package substrate, interposer or RDL · CPC title
utilising a spring, clip, or other resilient member (H01R4/52 takes precedence) · CPC title
one conductor screwing into another · CPC title
Conductive members located parallel to axis of screw · CPC title
Riveted connections (by explosion H01R4/08) · CPC title
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