Power semiconductor module and method for producing a power semiconductor module

Patent metadata

Field	Value
Publication number	US-10020237-B2
Application number	US-201514925274-A
Country	US
Kind code	B2
Filing date	Oct 28, 2015
Priority date	Oct 30, 2014
Publication date	Jul 10, 2018
Grant date	Jul 10, 2018

Abstract

A power semiconductor module includes a module housing and a circuit carrier having a dielectric insulation carrier and an upper metallization layer applied onto an upper side of the dielectric insulation carrier. A semiconductor component is arranged on the circuit carrier. The power semiconductor module also has an electrically conductive terminal block connected firmly and electrically conductively to the circuit carrier and/or to the semiconductor component. The terminal block has a screw thread that is accessible from an outer side of the module housing. A method for producing such a power semiconductor module is also provided.

First claim

What is claimed is:

1. A power semiconductor module, comprising:
a module housing;
a circuit carrier comprising a dielectric insulation carrier and an upper metallization layer applied onto an upper side of the dielectric insulation carrier;
a semiconductor component arranged on the circuit carrier;
an electrically conductive terminal block comprising a screw thread that is accessible from an outer side of the module housing;
a connecting conductor comprising a first section at which the connecting conductor is connected firmly and electrically conductively to the terminal block at a first connecting position, and a second section at which the connecting conductor is connected with a material fit and electrically conductively to the circuit carrier and/or to the semiconductor component at a second connecting position;
an electrically conductive further terminal block comprising a further screw thread that is accessible from the outer side of the module housing; and
a further connecting conductor comprising a further first section at which the further connecting conductor is connected firmly and electrically conductively to the further terminal block at a further first connecting position, and a further second section at which the further connecting conductor is connected with a material fit and electrically conductively to the circuit carrier and/or to the semiconductor component at a further second connecting position,
wherein the connecting conductor and the further connecting conductor are routed in parallel over a length of at least 30 mm.

2. The power semiconductor module of claim 1 , wherein the connecting conductor is soldered, welded, laser-welded or riveted to the terminal block at the first connecting position.

3. The power semiconductor module of claim 1 , wherein the connecting conductor is soldered, sintered, welded, ultrasound-welded or electrically conductively adhesively bonded to the circuit carrier or to the semiconductor component at the second connecting position.

4. The power semiconductor module of claim 1 , wherein the connecting conductor is molded or placed in sections into the module housing or into a part of the module housing and is firmly connected to the module housing or the part of the module housing.

5. The power semiconductor module of claim 1 , wherein the insulation carrier comprises a ceramic.

6. The power semiconductor module of claim 1 , wherein the screw thread is an internal screw thread or an external screw thread.

7. The power semiconductor module of claim 1 , wherein the screw thread has a screw-thread axis which extends perpendicularly to the upper side of the dielectric insulation carrier.

8. The power semiconductor module of claim 1 , wherein the terminal block is formed in one piece.

9. The power semiconductor module of claim 1 , wherein the terminal block comprises a uniform material or has a homogeneous material composition.

10. The power semiconductor module of claim 1 , wherein the connecting conductor and the further connecting conductor have a spacing of at most 5 mm in the region in which they are routed in parallel.

11. A power semiconductor module, comprising:
a module housing;
a circuit carrier comprising a dielectric insulation carrier and an upper metallization layer applied onto an upper side of the dielectric insulation carrier;
a semiconductor component arranged on the circuit carrier;
an electrically conductive terminal block comprising a screw thread that is accessible from an outer side of the module housing; and
a connecting conductor comprising a first end section, a second end section opposite the first end section and an intermediary section connecting the first end section to the second end section,
wherein the connecting conductor is connected firmly and electrically conductively to the terminal block at the first end section,
wherein the connecting conductor is connected with a material fit and electrically conductively to the circuit carrier and/or to the semiconductor component at the second end section,
wherein the intermediary section extends lengthwise in a first plane,
wherein the first end section terminates in a plane above the first plane,
wherein the second end section terminates in a plane below the first plane.

Assignees

• Infineon Technologies Ag

Inventors

• Hoehn Alexander
• Borghoff Georg

Classifications

• H10W72/884

  Die-attach connectors and bond wires · CPC title

• H10W90/754

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W72/5363

  the connected ends being wedge-shaped · CPC title

• H10W72/944

  Dispositions of multiple bond pads · CPC title

• H10W72/926

  Multiple bond pads having different sizes · CPC title